Double-Sided Heterojunction Intrinsic Thin Layer Solar Cells

Double-sided heterojunction solar cells with intrinsic amorphous silicon (a-Si) layers, achieved through a novel approach that enables precise control over the deposition conditions of the a-Si layer. The solar cells feature a single-crystal silicon substrate with a surface treated to create a pyramid structure, followed by a window layer comprising a wide bandgap a-Si or microcrystalline a-Si film, a back field layer comprising intrinsic non-crystalline silicon, and transparent conductive films. The a-Si layer is deposited with oxygen incorporation, followed by doping with carbon atoms, and then deposited on the back field layer. This approach expands the process window for a-Si deposition while maintaining high conversion efficiency and carrier mobility, enabling the production of high-efficiency solar cells with improved stability and reliability.

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Solar cell preparation method for achieving high-efficiency photovoltaic cells through a novel approach. The method involves creating a substrate with a backside intrinsic silicon layer and an isolation buffer layer, followed by patterning and removing the backside layers to expose the intrinsic silicon layer. This sequential approach allows for the formation of a transparent conductive layer, metal electrode, and organic phototransfer layer while maintaining the intrinsic silicon layer structure. The method enables the creation of high-efficiency solar cells with improved light transmission and reduced thickness of the photoconversion layer.

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Heterojunction solar cells, photovoltaic modules, and photovoltaic systems that enable efficient and cost-effective solar energy conversion through novel semiconductor architectures. The solar cells employ a heterojunction structure that combines different semiconductor materials to enhance light absorption and transport, while the photovoltaic modules integrate these cells into a compact, efficient system. The photovoltaic systems leverage advanced materials and architectures to overcome the limitations of traditional heterojunction solar cells, enabling higher power conversion efficiency and lower production costs.

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Silicon heterojunction solar cell structure and preparation method that improves the efficiency of silicon heterojunction solar cells by enhancing carrier collection through optimized junction configurations. The method involves creating high and low junctions on the n-type single crystal silicon substrate through doping and patterning, followed by the deposition of intrinsic amorphous silicon film layers on both sides. The doping layer on the substrate creates high and low junctions, while the intrinsic amorphous silicon layers form a ladder structure with tunneling barriers that enhance carrier collection. A n+ doped layer on the substrate creates high junctions on the front side, while the intrinsic amorphous silicon layers form a n- and n+ ladder structure on the back side. The n+ doped layer on the substrate creates high junctions on the back side, while the intrinsic amorphous silicon layers form a n- and n+ ladder structure on the back side.

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Heterojunction solar cell with enhanced photoelectric conversion efficiency through optimized amorphous silicon layer design. The cell incorporates a novel amorphous silicon layer that combines the benefits of intrinsic amorphous silicon passivation and formation of intrinsic PN junctions. The layer's unique composition and distribution characteristics enable improved light absorption, reduced recombination, and enhanced charge carrier transport, resulting in higher solar cell efficiency compared to conventional amorphous silicon-based solar cells.

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Heterojunction solar cells with enhanced efficiency through optimized intrinsic silicon layer thickness and selective transmission layers. The cells feature a dielectric layer on the silicon substrate, followed by a selective transmission layer on the dielectric layer, and a transparent conductive layer on the transmission layer. This configuration enables improved minority carrier shielding while maintaining high fill factor, particularly in solar cells with thicker intrinsic silicon layers. The selective transmission layers are doped amorphous layers or microcrystalline layers that selectively transmit light while blocking minority carriers. The transparent conductive layers are deposited on the transmission layers, and metal electrodes are deposited on the transparent conductive layers.

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Double-sided solar cell with enhanced light absorption and conversion efficiency through a novel architecture. The cell comprises a top heterojunction layer, a silicon substrate, a tunneling layer, and a bottom heterojunction layer. The top heterojunction layer is positioned at the top of the substrate, while the bottom heterojunction layer is integrated under the substrate. This configuration enables the bottom heterojunction layer to capture a broader spectrum of light, including infrared wavelengths, while the top heterojunction layer enhances visible light absorption. The tunneling layer acts as an intermediate interface between the substrate and the bottom heterojunction layer. The cell achieves improved light utilization and conversion efficiency through this integrated architecture.

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Tandem solar cell with enhanced light conversion efficiency through a novel architecture that combines multiple photovoltaic layers. The cell features a light-absorbing layer, an electron transport layer, and a hole transport layer, with a reflective layer separating the light-absorbing and transport layers. The reflective layer is designed to maximize light transmission while minimizing absorption, while the transport layers enable efficient charge separation. The cell achieves improved conversion efficiency by utilizing a heterojunction between the transport layers, where holes from the transport layer combine with electrons from the transport layer to generate a current.

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Back-junction silicon heterojunction solar cell with improved efficiency and production capacity through the use of a wide bandgap window layer. The cell features an intrinsic amorphous silicon layer on one side of the base, a broadband window layer, and a transparent conductive oxide layer on the other side. The window layer is deposited using PECVD and is specifically optimized for the application using amorphous silicon oxide or amorphous silicon carbide as the wide bandgap material. This approach enables rapid deposition of the window layer while maintaining high quality, allowing for enhanced conversion efficiency and production capacity compared to conventional window layer deposition methods.

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A novel approach to enhancing heterojunction solar cell efficiency through the integration of intrinsic silicon layers with amorphous silicon doped layers. The method involves creating a passivation layer on the silicon substrate surface using a silicon dioxide layer, followed by deposition of a conductive Tantalum Carbide (TCO) layer. The TCO layer is then deposited on both the silicon substrate and the amorphous silicon doped layer, forming a uniform interface. This architecture enables improved passivation of the intrinsic silicon layer, enhanced carrier transport, and reduced interface defects, resulting in enhanced solar cell performance.

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A heterojunction solar cell that enhances photoelectric conversion efficiency by integrating a p-type amorphous silicon layer with an intrinsic amorphous silicon layer. The p-type layer serves as a hole transport layer, while the intrinsic layer provides a passivation layer. This dual-layer architecture addresses the conventional limitations of amorphous silicon-based heterojunctions by enabling both hole and electron transport through the intrinsic layer. The p-type layer is doped with a specific concentration to optimize hole transport, while the intrinsic layer maintains its intrinsic properties. This configuration enables improved charge carrier collection and reduced parasitic absorption, resulting in enhanced solar cell efficiency.

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Double-sided TOPCon solar cell design using an n-type silicon substrate that improves efficiency by replacing the front heavily doped polysilicon layer with a wider bandgap p-type CuAlO layer. This increases visible light transmission through the cell. The cell structure involves a tunneling layer, emitter layer, CuAlO layer, anti-reflection layer, and electrode on both sides of the substrate.

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A heterojunction solar cell with enhanced bifacial efficiency through optimized transparent conductive film design. The cell features a silicon substrate with intrinsic amorphous layer, intrinsic doped layer, and transparent conductive film layer on the light-receiving surface, followed by a second intrinsic doped layer and transparent conductive film on the backlight surface. The transparent conductive film on the light-receiving surface has a higher doping concentration and thicker thickness than the film on the backlight surface, while maintaining superior light transmission properties. This configuration enables improved bifacial efficiency compared to conventional designs by maximizing the light absorption on both sides of the solar cell.

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Double-sided heterojunction solar cell with enhanced light transmission through a novel intrinsic amorphous layer configuration. The cell features a monocrystalline silicon substrate, a first intrinsic amorphous layer, a first doped amorphous layer arranged on the light-receiving surface, a first transparent conductive film layer, and a first collector electrode, sequentially stacked on the second intrinsic amorphous layer. The second doped amorphous layer comprises a first doped amorphous layer located on the second intrinsic amorphous layer and a crystalline silicon film or doped amorphous silicon carbide film located on the first doped amorphous layer. This configuration enables improved light transmission below 700 nm through the second intrinsic amorphous layer, while maintaining high efficiency in the visible spectrum.

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A novel heterojunction solar cell featuring a silicon nitride layer with a thickness of 50-80nm. The cell incorporates a P-type amorphous silicon layer with third main group elements doping sources, and an N-type amorphous silicon layer with doping sources. The silicon nitride layer serves as an anti-reflection coating while the silicon oxide layer provides thermal management. The cell achieves high efficiency through the heterojunction structure, which enables improved light absorption and reduced material processing complexity compared to conventional PERC cells.

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Heterojunction solar cell with enhanced light transmission through optimized passivation of the silicon substrate. The cell incorporates an intrinsic amorphous silicon oxide layer with superior light transmission properties, positioned farthest from the substrate. This layer is created through a selective removal of surface oxide followed by anisotropic etching of monocrystalline silicon. The oxide layer, with its superior light transmission characteristics, optimizes the heterojunction solar cell's photoelectric conversion efficiency.

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Heterojunction solar cells and photovoltaic modules that enhance light absorption through optimized intrinsic layer design. The invention introduces a novel intrinsic layer structure that combines the benefits of intrinsic silicon with the advantages of doped amorphous silicon. The intrinsic layer is engineered to have a specific optical bandgap that complements the doped layer's optical properties, thereby significantly improving light absorption and increasing the overall efficiency of the heterojunction solar cell.

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Heterojunction solar cells with improved optical and electrical performance. The cells feature a reduced thickness intrinsic amorphous layer on the front side, while maintaining the same thickness for the second intrinsic layer. This design optimizes light absorption and reduces optical losses compared to conventional structures. The cells also incorporate a complementary doped layer with a different doping type, enabling enhanced electrical performance through improved contact and passivation.

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Silicon heterojunction photovoltaic cells and devices for indoor power generation, particularly for applications requiring high efficiency and compact power solutions. The cells and devices employ a novel crystal structure comprising a single-crystalline silicon substrate with a pyramid-shaped light trapping structure on both surfaces, followed by a series of intrinsic and doped amorphous silicon layers. This architecture enables enhanced light absorption and reduced surface recombination through the intrinsic amorphous silicon layer. The structure is then completed with a conductive layer and a second intrinsic amorphous silicon layer, forming a heterojunction that enables efficient conversion of ambient light into electrical energy.

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Double-sided double-junction solar cell with improved light absorption using a multilayer indium tin oxide (ITO) reflection layer inside the cell. The ITO layers are deposited to form a distributed Bragg reflector (DBR) mirror inside the cell. This reflective structure increases the absorption of light by reducing reflection and improving utilization of the cell surfaces. The DBR is made by alternating layers of high and low refractive index ITO to enhance reflection at specific wavelengths. This allows better absorption of sunlight compared to conventional cells with external reflectors.

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HJT solar cells with enhanced photoelectric conversion efficiency through a novel intrinsic layer design. The cell structure comprises an N-type silicon wafer with a sequential intrinsic layer of amorphous silicon and a second SiO2 layer, followed by a doped SiO2 layer, an amorphous silicon doped N-type layer, a transparent conductive oxide (TCO) layer, and a second electrode. The intrinsic layer of amorphous silicon plays a critical role in passivating surface defects and reducing carrier recombination, while the doped SiO2 layer enhances passivation properties. The amorphous silicon doped N-type layer forms a PIN junction and field-effect passivation layer with crystalline silicon. The transparent conductive oxide layer and second electrode complete the cell architecture. This configuration enables improved photoelectric conversion efficiency compared to conventional heterojunction solar cells.

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A heterojunction solar cell with improved light absorption and conversion efficiency. The cell comprises a substrate layer, a first intrinsic layer, a first doped layer, and a second intrinsic layer, where the first doped layer includes at least three doped sub-layers arranged in a stack. The cell also features a transparent conductive oxide (TCO) front electrode. The doped sub-layers in the second intrinsic layer enhance light absorption while maintaining carrier transport properties, enabling the heterojunction solar cell to achieve higher photoelectric conversion efficiency compared to conventional two-layer doped structures.

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Silicon heterojunction solar cell with enhanced short-circuit current and efficiency through a novel architecture. The cell features a crystalline silicon substrate, an intrinsic amorphous silicon layer, and a transparent conductive layer arranged from inside to outside. An interdigital structure layer separates the crystalline silicon from the transparent conductive layer, while a backside contact layer provides a conductive path to the external circuitry. This configuration enables improved current collection and reduced light absorption losses compared to conventional heterojunction solar cells.

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A photovoltaic cell structure that enhances current output efficiency through the use of crystalline silicon as the primary active layer. The structure employs a novel heterojunction architecture where crystalline silicon is combined with a thin layer of amorphous silicon (α-Si) to create a hybrid active layer. This hybrid layer enables improved current density performance compared to conventional amorphous silicon-based structures, particularly in high-efficiency solar cells. The α-Si layer provides enhanced light absorption, while the crystalline silicon layer contributes to the electrical conductivity and current collection. The hybrid architecture enables higher current output capacities while maintaining the benefits of crystalline silicon-based photovoltaic cells.

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Solar cell with double-sided light-incoming structure featuring a compound carrier transport layer. The cell incorporates a compound material as the carrier transport layer, which enhances light transmission while maintaining carrier mobility. The compound material has a larger band gap than conventional silicon, enabling efficient light absorption on both sides of the cell. The compound material also serves as a window layer, reducing recombination losses. The cell achieves improved photoelectric conversion efficiency through the compound material's unique properties.

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Heterojunction solar cell and shingled module technology that enables high-efficiency photovoltaic devices through a novel assembly approach. The invention comprises a heterojunction solar cell sheet with electrodes on both top and bottom surfaces, where the top surface features an intrinsic amorphous silicon layer and the bottom surface features a second intrinsic amorphous silicon layer. The solar cell sheet is connected in a shingled configuration using the intrinsic amorphous silicon layers, enabling a high-efficiency photovoltaic device with reduced material requirements and improved scalability.

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Heterojunction solar cell with improved light transmission and reduced efficiency losses through optimized amorphous layer design. The design incorporates asymmetric amorphous layer thicknesses on both sides of the monocrystalline silicon substrate, with the intrinsic layer thickness on one side being equal to the doped layer thickness on the other. This asymmetric design enables better light transmission through the amorphous layer while maintaining optimal contact between the intrinsic and doped layers. The asymmetric design also improves passivation performance on the back side of the solar cell.

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Double-sided heterojunction solar cells and photovoltaic modules that enhance efficiency through improved light transmission. The cells feature a single crystal silicon substrate, a back intrinsic amorphous layer, and an intrinsic amorphous layer on the back surface. The back-doped amorphous layer comprises a doped amorphous silicon film on the back intrinsic amorphous layer and a doped amorphous silicon film on the back surface of the first doped amorphous silicon film. This configuration enables enhanced light transmission through the intrinsic amorphous layer, while maintaining the back-doped layer's superior electrical properties.

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A heterojunction solar cell that enhances photovoltaic efficiency through optimized interface engineering. The cell features a highly doped amorphous silicon layer on the substrate, with a carrier concentration of 5E19/cm3, which ensures strong carrier transport. The intrinsic amorphous layer, positioned farthest from the substrate, is engineered to provide optimal passivation while maintaining high light transmission. This configuration enables efficient photovoltaic conversion while minimizing substrate damage and leakage risks.

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Heterojunction solar cell and photovoltaic module that enhances light transmission through a novel doping strategy. The cell incorporates a doped amorphous silicon layer with a controlled doping concentration, which enables improved light absorption while maintaining high electrical conductivity. This doping approach addresses the limitations of conventional doping methods by optimizing the optical band gap for maximum light transmission while maintaining electrical properties. The resulting cell exhibits enhanced light absorption and improved efficiency compared to conventional doping methods.

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A heterojunction solar cell sheet that enables high-efficiency solar cells by optimizing the processing conditions for light-transmitting conductive layers. The sheet employs a novel approach where the light-transmitting conductive layers are processed at lower temperatures near the amorphous silicon film layer, while the remaining high-temperature processing is applied to the light-transmitting conductive layers. This dual-temperature processing strategy maintains the PN junction integrity and prevents light-induced degradation while achieving the desired conductivity properties. The optimized processing conditions enable higher carrier recombination rates, improved passivation of the amorphous silicon layer, and enhanced conversion efficiency of the heterojunction solar cell.

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Solar cell and solar cell module with enhanced photoelectric conversion properties through a novel heterojunction structure. The cell comprises a crystalline silicon substrate, a phosphorus-doped layer, an intrinsic amorphous silicon layer, and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer has a higher dopant concentration than the phosphorus-doped layer and the intrinsic amorphous silicon layer, with the dopant concentration exceeding that of the phosphorus-doped layer. This configuration enables improved charge carrier recombination at the interface between the intrinsic amorphous silicon layer and the p-type amorphous silicon layer, resulting in enhanced solar cell efficiency.

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Heterojunction solar cell and shingled module manufacturing method that enhances solar cell performance through optimized intrinsic silicon layer composition. The method integrates four-layer structures in the solar cell's substrate and intrinsic silicon layer, with different dopant compositions on the top and bottom surfaces. This composition variation enables enhanced electrical performance and efficiency in solar cells. The method enables the creation of shingled solar modules by combining these optimized solar cells in a controlled assembly process.

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High-efficiency crystalline silicon/amorphous silicon heterojunction solar cell and preparation method for achieving enhanced photovoltaic performance. The cell combines crystalline silicon and amorphous silicon layers through a novel heterojunction structure, where intrinsic amorphous silicon serves as the passivation layer. This approach enables improved minority carrier lifetime, reduced parasitic absorption, and enhanced minority carrier lifetime, resulting in higher conversion efficiency and open-circuit voltage compared to conventional heterojunction solar cells. The preparation method involves depositing intrinsic amorphous silicon on the silicon wafer and then depositing doped amorphous silicon layers on both the intrinsic and p-n layers.

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High-efficiency solar cells with enhanced performance through novel heterojunction architectures. The solar cells achieve higher conversion efficiencies than conventional HIT cells by integrating intrinsic amorphous silicon (a-Si) with n-type amorphous silicon (n-p) in a heterojunction configuration. This approach enables improved light absorption and reduced thermal degradation compared to conventional architectures. The solar cells exhibit enhanced performance characteristics, including higher power conversion efficiency (PCE) and lower temperature coefficient, making them suitable for commercial-scale applications.

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Solar cells with enhanced short-circuit current through improved light transmission through the intrinsic silicon layer. The conventional HIT solar cell structure has a thin amorphous silicon layer on the substrate, which compromises light absorption and carrier generation. The present invention addresses this limitation by incorporating a thicker intrinsic silicon layer, enabling better light penetration through the substrate. This approach enables higher short-circuit current densities, improving the overall performance of the solar cell.

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Solar cell with enhanced short-circuit current density through a novel intrinsic amorphous silicon layer structure. The cell comprises a substrate, a first intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a first TC0 film layer, a second TC0 film layer, a carbon-silicon film layer, and a p-type carbon silicon film layer. The layers are sequentially deposited on the substrate surface, with the second intrinsic amorphous silicon layer and n-type carbon silicon film layer forming the outer surface. This configuration enables the formation of a light-transmissive film layer that can be absorbed into the substrate and facilitates carrier generation and collection.

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A crystalline silicon heterojunction double-sided solar cell structure that combines the advantages of ρη homojunction high short-circuit current and ρη heterojunction high open circuit voltage. The structure incorporates a heterojunction configuration between the front and back contacts, enabling both high short-circuit current and high open circuit voltage while maintaining high efficiency. The heterojunction configuration enables the creation of a high-efficiency solar cell with improved power conversion characteristics compared to conventional double-sided solar cells.

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Double-sided light-receiving crystalline silicon/thin film heterojunction solar cell with enhanced absorption and carrier recombination properties. The cell comprises a n-type silicon substrate with two opposing surfaces, a window layer featuring intrinsic amorphous silicon and n-type doped amorphous silicon, and a back field layer with intrinsic amorphous silicon and P-type doped amorphous silicon. The window layer is formed through plasma-enhanced chemical vapor deposition (PECVD) of amorphous silicon, while the back field layer is created through doping n-type amorphous silicon with carbon. A transparent conductive film is deposited on the window layer, followed by a second transparent conductive film on the back field layer. The cell features a first electrode on the transparent conductive film and a second electrode on the second transparent conductive film, with a transparent conductive film forming between them. This configuration enables efficient light absorption and carrier collection through the window layer, while the back field layer provides additional protection and structural integrity.

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High-efficiency heterojunction solar cell with a novel preparation method that enables unprecedented power conversion efficiency through controlled crystallization of amorphous silicon. The cell features a crystalline silicon base layer and an amorphous silicon top layer, with a laser-induced crystallization process that creates linear heat-treated regions through controlled laser irradiation. The precise control over the crystallization pattern and thickness enables the formation of uniform, high-quality crystalline regions that enhance the solar cell's overall efficiency.

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Double-sided silicon solar cell with enhanced light absorption and passivation through a novel tunneling layer design. The cell features a silicon substrate with a conductive layer and a tunneling layer on the rear surface, where an amorphous silicon layer and polycrystalline silicon regions are alternately deposited. The tunneling layer, comprising a silicon oxide or metal oxide interface, facilitates electron-hole separation while maintaining passivation of the intrinsic silicon regions. The cell achieves improved light absorption and passivation performance compared to conventional solar cells, particularly at high solar irradiance levels.

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Solar cell with enhanced photoelectric conversion efficiency through a novel semiconductor structure. The cell comprises a substrate, a first amorphous semiconductor layer, an intrinsic i-type amorphous semiconductor layer, a second amorphous semiconductor layer, and a first crystalline semiconductor layer. The first amorphous semiconductor layer is positioned on one side of the substrate, the intrinsic i-type amorphous semiconductor layer is positioned between the first amorphous and first crystalline semiconductor layers, and the second amorphous semiconductor layer is positioned on the i-type amorphous semiconductor layer. The first crystalline semiconductor layer is positioned between the first amorphous and second amorphous semiconductor layers. This configuration enables direct contact between the semiconductor layers while maintaining the intrinsic properties of each material type, allowing for efficient carrier flow through the semiconductor layers.

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A photovoltaic cell with high efficiency and short circuit current. The cell has a crystalline silicon substrate sandwiched between two amorphous semiconductor layers. The outer layers are transparent conductive films. In between, an insulating bismuth oxynitride layer provides electrical isolation. The bismuth oxynitride layer improves short circuit current and open circuit voltage compared to air or other insulating materials. The bismuth oxynitride also reduces reflection compared to air. The cell structure enables high efficiency by minimizing reflection, maximizing charge extraction, and preventing shading between the layers.

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Double-sided solar cell with improved conversion efficiency through enhanced back-side light utilization. The cell comprises a back electrode, a TCO layer, a P-type amorphous silicon layer, a first intrinsic amorphous silicon layer, and an N-type amorphous silicon layer. The cell features a stacked structure with the back electrode, TCO layer, P-type layer, first intrinsic layer, P-type layer, N-type layer, anti-reflection film, and front electrode. The back electrode is optimized for efficient light absorption, while the TCO layer enhances carrier transport. The cell achieves higher conversion efficiency by leveraging both front and back-side light conversion mechanisms.

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A solar energy battery with enhanced photovoltaic conversion efficiency through a novel double heterojunction architecture. The invention features a solar cell with two separate heterojunction interfaces, each comprising a different semiconductor material, arranged on a single substrate. This double heterojunction design enables improved charge carrier separation and recombination at the interfaces, leading to increased power conversion efficiency. The cell architecture addresses the limitations of conventional single heterojunction solar cells by addressing surface defect density and interface quality, thereby achieving higher conversion efficiency and improved overall performance.

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