50 patents in this list

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Double-sided heterojunction solar cells require precise control of intrinsic amorphous silicon (a-Si) layers, with current designs achieving conversion efficiencies above 25%. These cells must maintain optimal charge carrier transport while managing both front and rear interfaces, where thickness variations of just nanometers can significantly impact performance.

The fundamental challenge lies in balancing the competing requirements of surface passivation, optical transparency, and carrier transport across multiple interfaces while maintaining manufacturability.

This page brings together solutions from recent research—including novel pyramid-structured substrates, optimized tunneling interfaces, selective transmission layers, and advanced PECVD deposition techniques. These and other approaches focus on achieving higher conversion efficiencies while ensuring robust, production-ready cell architectures.

1. Solar Cell with Integrated Thermally Conductive Pad and Copper Strip for Passive Cooling

UNIV DELFT TECH, 2024

Solar cell with integrated thermal management system that enables passive cooling of photovoltaic modules through a direct heat transfer path. The cell incorporates a thermally conductive pad and copper strip that connect to the module frame, eliminating the need for traditional cooling systems. The pad and strip are integrated into the solar cell structure, with the copper strip forming a direct thermal pathway between the solar cell and the frame. This design enables efficient heat dissipation through the module frame, while maintaining the solar cell's electrical performance.

WO2024091112A1-patent-drawing

2. Double-Sided Heterojunction Solar Cells with Intrinsic Amorphous Silicon Layers and Pyramid-Structured Single-Crystal Silicon Substrate

TONGWEI SOLAR CO LTD, Tongwei Solar Co., Ltd., 2024

Double-sided heterojunction solar cells with intrinsic amorphous silicon (a-Si) layers, achieved through a novel approach that enables precise control over the deposition conditions of the a-Si layer. The solar cells feature a single-crystal silicon substrate with a surface treated to create a pyramid structure, followed by a window layer comprising a wide bandgap a-Si or microcrystalline a-Si film, a back field layer comprising intrinsic non-crystalline silicon, and transparent conductive films. The a-Si layer is deposited with oxygen incorporation, followed by doping with carbon atoms, and then deposited on the back field layer. This approach expands the process window for a-Si deposition while maintaining high conversion efficiency and carrier mobility, enabling the production of high-efficiency solar cells with improved stability and reliability.

3. Method for Solar Cell Fabrication Using Backside Intrinsic Silicon Layer with Isolation Buffer and Sequential Layer Patterning

SHANGHAI ELECTRIC GROUP HENGXI PHOTOVOLTAIC TECH NANTONG CO LTD, 2024

Solar cell preparation method for achieving high-efficiency photovoltaic cells through a novel approach. The method involves creating a substrate with a backside intrinsic silicon layer and an isolation buffer layer, followed by patterning and removing the backside layers to expose the intrinsic silicon layer. This sequential approach allows for the formation of a transparent conductive layer, metal electrode, and organic phototransfer layer while maintaining the intrinsic silicon layer structure. The method enables the creation of high-efficiency solar cells with improved light transmission and reduced thickness of the photoconversion layer.

CN117790591A-patent-drawing

4. Heterojunction Solar Cells with Novel Semiconductor Architectures for Enhanced Light Absorption

TRINA SOLAR CO LTD, 2024

Heterojunction solar cells, photovoltaic modules, and photovoltaic systems that enable efficient and cost-effective solar energy conversion through novel semiconductor architectures. The solar cells employ a heterojunction structure that combines different semiconductor materials to enhance light absorption and transport, while the photovoltaic modules integrate these cells into a compact, efficient system. The photovoltaic systems leverage advanced materials and architectures to overcome the limitations of traditional heterojunction solar cells, enabling higher power conversion efficiency and lower production costs.

5. Silicon Heterojunction Solar Cell with Doped Junction and Ladder-Structured Amorphous Silicon Layers

HUANENG JIAYUGUAN NEW ENERGY CO LTD, 2024

Silicon heterojunction solar cell structure and preparation method that improves the efficiency of silicon heterojunction solar cells by enhancing carrier collection through optimized junction configurations. The method involves creating high and low junctions on the n-type single crystal silicon substrate through doping and patterning, followed by the deposition of intrinsic amorphous silicon film layers on both sides. The doping layer on the substrate creates high and low junctions, while the intrinsic amorphous silicon layers form a ladder structure with tunneling barriers that enhance carrier collection. A n+ doped layer on the substrate creates high junctions on the front side, while the intrinsic amorphous silicon layers form a n- and n+ ladder structure on the back side. The n+ doped layer on the substrate creates high junctions on the back side, while the intrinsic amorphous silicon layers form a n- and n+ ladder structure on the back side.

6. Heterojunction Solar Cell with Novel Amorphous Silicon Layer for Intrinsic PN Junction Formation

TRINA SOLAR CO LTD, 2023

Heterojunction solar cell with enhanced photoelectric conversion efficiency through optimized amorphous silicon layer design. The cell incorporates a novel amorphous silicon layer that combines the benefits of intrinsic amorphous silicon passivation and formation of intrinsic PN junctions. The layer's unique composition and distribution characteristics enable improved light absorption, reduced recombination, and enhanced charge carrier transport, resulting in higher solar cell efficiency compared to conventional amorphous silicon-based solar cells.

7. Heterojunction Solar Cells with Dielectric and Selective Transmission Layers for Enhanced Minority Carrier Shielding

TRINA SOLAR CO LTD, 2023

Heterojunction solar cells with enhanced efficiency through optimized intrinsic silicon layer thickness and selective transmission layers. The cells feature a dielectric layer on the silicon substrate, followed by a selective transmission layer on the dielectric layer, and a transparent conductive layer on the transmission layer. This configuration enables improved minority carrier shielding while maintaining high fill factor, particularly in solar cells with thicker intrinsic silicon layers. The selective transmission layers are doped amorphous layers or microcrystalline layers that selectively transmit light while blocking minority carriers. The transparent conductive layers are deposited on the transmission layers, and metal electrodes are deposited on the transparent conductive layers.

CN117038746A-patent-drawing

8. Double-Sided Solar Cell with Top and Bottom Heterojunction Layers Separated by Tunneling Interface

GUANGDONG AIKO TECHNOLOGY CO LTD, TIANJIN AIKO SOLAR ENERGY TECHNOLOGY CO LTD, Tianjin Aiko Solar Technology Co., Ltd., 2023

Double-sided solar cell with enhanced light absorption and conversion efficiency through a novel architecture. The cell comprises a top heterojunction layer, a silicon substrate, a tunneling layer, and a bottom heterojunction layer. The top heterojunction layer is positioned at the top of the substrate, while the bottom heterojunction layer is integrated under the substrate. This configuration enables the bottom heterojunction layer to capture a broader spectrum of light, including infrared wavelengths, while the top heterojunction layer enhances visible light absorption. The tunneling layer acts as an intermediate interface between the substrate and the bottom heterojunction layer. The cell achieves improved light utilization and conversion efficiency through this integrated architecture.

9. Tandem Solar Cell with Multi-Layer Heterojunction and Reflective Layer Architecture

BEIJING ZENITHNANO TECH CO LTD, 2023

Tandem solar cell with enhanced light conversion efficiency through a novel architecture that combines multiple photovoltaic layers. The cell features a light-absorbing layer, an electron transport layer, and a hole transport layer, with a reflective layer separating the light-absorbing and transport layers. The reflective layer is designed to maximize light transmission while minimizing absorption, while the transport layers enable efficient charge separation. The cell achieves improved conversion efficiency by utilizing a heterojunction between the transport layers, where holes from the transport layer combine with electrons from the transport layer to generate a current.

EP4174914A1-patent-drawing

10. Back-Junction Silicon Heterojunction Solar Cell with Wide Bandgap Window Layer and PECVD-Deposited Amorphous Silicon Oxide or Silicon Carbide

Shanghai Jiao Tong University, SHANGHAI JIAO TONG UNIVERSITY, 2022

Back-junction silicon heterojunction solar cell with improved efficiency and production capacity through the use of a wide bandgap window layer. The cell features an intrinsic amorphous silicon layer on one side of the base, a broadband window layer, and a transparent conductive oxide layer on the other side. The window layer is deposited using PECVD and is specifically optimized for the application using amorphous silicon oxide or amorphous silicon carbide as the wide bandgap material. This approach enables rapid deposition of the window layer while maintaining high quality, allowing for enhanced conversion efficiency and production capacity compared to conventional window layer deposition methods.

CN112736151B-patent-drawing

11. Solar Cell with Alternating High-Doped Layers in Back Contact Region

JINKO SOLAR HOLDING CO LTD, 2022

Solar cell design with improved passivation and efficiency by using alternating high-doped layers in the back contact region. The solar cell has a doped conducting layer with p-type and n-type doped layers alternating. Highly doped regions are created inside the p-type and n-type layers. Electrodes penetrate the passivation film to contact these doped regions. This reduces contact resistance, improves passivation, and transmission through the doped layers.

12. Heterojunction Solar Cell Structure with Intrinsic Silicon and Amorphous Silicon Doped Layers Featuring Silicon Dioxide Passivation and Tantalum Carbide Conductive Layer

TONGWEI SOLAR ANHUI CO LTD, 2022

A novel approach to enhancing heterojunction solar cell efficiency through the integration of intrinsic silicon layers with amorphous silicon doped layers. The method involves creating a passivation layer on the silicon substrate surface using a silicon dioxide layer, followed by deposition of a conductive Tantalum Carbide (TCO) layer. The TCO layer is then deposited on both the silicon substrate and the amorphous silicon doped layer, forming a uniform interface. This architecture enables improved passivation of the intrinsic silicon layer, enhanced carrier transport, and reduced interface defects, resulting in enhanced solar cell performance.

WO2022170872A1-patent-drawing

13. Heterojunction Solar Cell with p-Type and Intrinsic Amorphous Silicon Layers for Enhanced Charge Carrier Transport

ZHEJIANG AIKOSOLAR TECHNOLOGY CO LTD, Zhejiang Aiko Solar Energy Technology Co., Ltd., 2022

A heterojunction solar cell that enhances photoelectric conversion efficiency by integrating a p-type amorphous silicon layer with an intrinsic amorphous silicon layer. The p-type layer serves as a hole transport layer, while the intrinsic layer provides a passivation layer. This dual-layer architecture addresses the conventional limitations of amorphous silicon-based heterojunctions by enabling both hole and electron transport through the intrinsic layer. The p-type layer is doped with a specific concentration to optimize hole transport, while the intrinsic layer maintains its intrinsic properties. This configuration enables improved charge carrier collection and reduced parasitic absorption, resulting in enhanced solar cell efficiency.

CN113990972B-patent-drawing

14. Double-Sided TOPCon Solar Cell with N-Type Silicon Substrate and P-Type CuAlO Layer

QINGHAI HUANGHE HYDROPOWER DEVELOPMENT CO LTD, 2022

Double-sided TOPCon solar cell design using an n-type silicon substrate that improves efficiency by replacing the front heavily doped polysilicon layer with a wider bandgap p-type CuAlO layer. This increases visible light transmission through the cell. The cell structure involves a tunneling layer, emitter layer, CuAlO layer, anti-reflection layer, and electrode on both sides of the substrate.

CN114512552A-patent-drawing

15. Heterojunction Solar Cell with Differentially Doped Transparent Conductive Films on Bifacial Surfaces

JIAXING ATES TECH RESEARCH INSTITUTE CO LTD, 2022

A heterojunction solar cell with enhanced bifacial efficiency through optimized transparent conductive film design. The cell features a silicon substrate with intrinsic amorphous layer, intrinsic doped layer, and transparent conductive film layer on the light-receiving surface, followed by a second intrinsic doped layer and transparent conductive film on the backlight surface. The transparent conductive film on the light-receiving surface has a higher doping concentration and thicker thickness than the film on the backlight surface, while maintaining superior light transmission properties. This configuration enables improved bifacial efficiency compared to conventional designs by maximizing the light absorption on both sides of the solar cell.

16. Double-Sided Heterojunction Solar Cell with Intrinsic Amorphous Layer and Doped Silicon Configuration

JIAXING ATES TECH RESEARCH INSTITUTE CO LTD, 2022

Double-sided heterojunction solar cell with enhanced light transmission through a novel intrinsic amorphous layer configuration. The cell features a monocrystalline silicon substrate, a first intrinsic amorphous layer, a first doped amorphous layer arranged on the light-receiving surface, a first transparent conductive film layer, and a first collector electrode, sequentially stacked on the second intrinsic amorphous layer. The second doped amorphous layer comprises a first doped amorphous layer located on the second intrinsic amorphous layer and a crystalline silicon film or doped amorphous silicon carbide film located on the first doped amorphous layer. This configuration enables improved light transmission below 700 nm through the second intrinsic amorphous layer, while maintaining high efficiency in the visible spectrum.

17. Heterojunction Solar Cell with Silicon Nitride Anti-Reflection Coating and Doped Amorphous Silicon Layers

TRINA SOLAR CO LTD, Trina Solar Co., Ltd., 2022

A novel heterojunction solar cell featuring a silicon nitride layer with a thickness of 50-80nm. The cell incorporates a P-type amorphous silicon layer with third main group elements doping sources, and an N-type amorphous silicon layer with doping sources. The silicon nitride layer serves as an anti-reflection coating while the silicon oxide layer provides thermal management. The cell achieves high efficiency through the heterojunction structure, which enables improved light absorption and reduced material processing complexity compared to conventional PERC cells.

CN216213500U-patent-drawing

18. Heterojunction Solar Cell with Intrinsic Amorphous Silicon Oxide Layer and Anisotropic Etched Monocrystalline Silicon

JIAXING ATES TECH RESEARCH INSTITUTE CO LTD, 2022

Heterojunction solar cell with enhanced light transmission through optimized passivation of the silicon substrate. The cell incorporates an intrinsic amorphous silicon oxide layer with superior light transmission properties, positioned farthest from the substrate. This layer is created through a selective removal of surface oxide followed by anisotropic etching of monocrystalline silicon. The oxide layer, with its superior light transmission characteristics, optimizes the heterojunction solar cell's photoelectric conversion efficiency.

19. Heterojunction Solar Cells with Engineered Intrinsic Layer Combining Intrinsic and Doped Amorphous Silicon

JIAXING ATES TECH RESEARCH INSTITUTE CO LTD, 2022

Heterojunction solar cells and photovoltaic modules that enhance light absorption through optimized intrinsic layer design. The invention introduces a novel intrinsic layer structure that combines the benefits of intrinsic silicon with the advantages of doped amorphous silicon. The intrinsic layer is engineered to have a specific optical bandgap that complements the doped layer's optical properties, thereby significantly improving light absorption and increasing the overall efficiency of the heterojunction solar cell.

20. Heterojunction Solar Cells with Reduced Thickness Front Intrinsic Amorphous Layer and Complementary Doped Layer

JIAXING ATES TECH RESEARCH INSTITUTE CO LTD, 2022

Heterojunction solar cells with improved optical and electrical performance. The cells feature a reduced thickness intrinsic amorphous layer on the front side, while maintaining the same thickness for the second intrinsic layer. This design optimizes light absorption and reduces optical losses compared to conventional structures. The cells also incorporate a complementary doped layer with a different doping type, enabling enhanced electrical performance through improved contact and passivation.

21. Silicon Heterojunction Photovoltaic Cell with Pyramid-Shaped Light Trapping and Amorphous Silicon Layers

22. Double-Sided Double-Junction Solar Cell with Internal Multilayer Indium Tin Oxide Distributed Bragg Reflector

23. Solar Cell Surface with Micro-Structured Interfaces via Controlled Etching and Spectroscopic Analysis

24. Heterojunction Solar Cell with Sequential Intrinsic Amorphous Silicon and Doped SiO2 Layers

25. Heterojunction Solar Cell with Stacked Doped Sub-Layers and Transparent Conductive Oxide Front Electrode

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