Dual-Gas Atomic Layer Etching for Precise Metal Film Removal

Etching ruthenium film in unwanted regions without plasma using atomic layer etching (ALE) process. The method involves exposing the ruthenium film to a halogen-containing gas followed by exposure to a carbon-oxygen mixture, repeating the steps to selectively remove ruthenium from undesired regions. This approach enables precise ruthenium removal through sequential self-controlled reactions at the atomic level.

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Enhancing selectivity in metal etching through controlled metal halide gas flow rates. The method employs a processing gas containing carbon, fluorine, and metal halides while maintaining lower flow rates of the carbon-fluorine gas compared to nitrogen gas. This selective etching approach allows precise control over the etching process while maintaining the necessary metal halide content for effective etching of the target material.

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Improved etching of high aspect ratio features in semiconductor structures by controlling the etching process to balance top-to-bottom loading. The method employs a controlled ratio of fluorine-containing precursors and auxiliary gases, specifically targeting a 1:1 fluorine-to-oxygen ratio, to selectively etch metal while preserving the structure's integrity. This approach enables precise control over the etching depth and pattern quality, particularly in deep structures where conventional wet etching may fail. The method is particularly effective for creating high-aspect-ratio features in 3D NAND structures.

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A novel dry etching method for copper thin films that achieves nanoscale patterning without plasma-based etching. The method employs a non-plasmaized reaction gas containing an organic chelator that forms a copper compound layer on the copper thin film. This layer is then selectively removed using a plasmaized inert gas or inert gas mixture, with controlled temperature and exposure conditions. The process involves two-stage etching: first, a non-plasmaized reaction gas forms the copper compound layer, followed by a plasmaized inert gas or inert gas mixture to selectively remove the compound layer.

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A method for selectively removing metal-containing layers in semiconductor fabrication using a reaction-based approach. The process involves etching a metal-containing layer on a substrate while simultaneously forming a metal-containing layer on another substrate region. The metal-containing layer on the first substrate is selectively removed through a reaction with a base, while the metal-containing layer on the second substrate remains intact. This approach enables the precise removal of metal-containing layers while maintaining the integrity of the underlying semiconductor material.

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A novel dry etching method for semiconductor devices that eliminates the need for plasma processing while maintaining high etch rates. The method employs β-diketone and halogen-containing gas mixtures as etching agents, which form complexes with metal oxides and nitrides to enhance etch properties. The etching process is performed at controlled pressures (0.1-101.3 kPa) without plasma, allowing precise control over etch conditions. This approach enables the use of conventional dry etching equipment while maintaining the benefits of dry etching. The method can be applied to various metal and oxide/nitride films, including those with different oxidation states and surface treatments.

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Selectively etching semiconductor features in nitrogen or carbon containing dielectric layers or polysilicon layers under a mask while providing profile control and CD control. The etch process involves flowing an etchant gas with a metal containing passivant to simultaneously etch the features and passivate the sidewalls with metal. The metal passivant prevents necking and tapering of the features during etching. The metal passivant also improves selectivity compared to traditional hydrocarbon or fluorocarbon passivants. The metal passivant can be a halogen containing compound like carbon tetrafluoride or fluorohydrocarbons.

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Method for etching high-aspect-ratio memory features in silicon using selective etching of the etch front and liner regions. The method employs a dual-gas etching process that selectively etches the etch front regions while depositing a metal catalyst layer on the liner. The etching process creates a uniform metal catalyst layer on the etch front while maintaining the liner's structure. This approach enables precise control of etch front profiles without compromising liner integrity, particularly for high-aspect-ratio features where conventional sidewall deposition is challenging.

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Etching semiconductor substrates using a vapor-phase reaction instead of plasma etching. The reaction involves a halogen source like hydrogen fluoride, an organic solvent like water, an additive containing a hydrogen fluoride complex former, and a carrier gas. The substrate is heated in the reaction chamber to drive the etching reaction. The vapor-phase etching allows selective removal of materials like oxides compared to nitrides or epitaxial layers. Rapid heating and cooling using LEDs aids throughput.

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Atomic layer etching method for precise metal thin film removal from semiconductor substrates, enabling controlled etching at atomic layer resolution. The method employs a novel combination of active gas and amine-based etching support gases to achieve atomic layer precision. The active gas is applied first, followed by the etching support gas, which is specifically formulated to enhance etch selectivity and uniformity. This approach enables precise metal removal while minimizing reaction byproducts and defects.

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A method for creating high-performance semiconductor devices through a novel etching process. The process involves sequentially introducing boron, halide, and hydrogen gases to a substrate during a multi-step etching cycle. The sequential etching approach enables the creation of complex patterns and structures by controlling the etching rates and conditions in a controlled manner, rather than applying uniform etching conditions across the substrate. This approach allows for precise control over the etching process and enables the creation of complex geometries and patterns in the semiconductor material.

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Selective etching of metal layers in semiconductor manufacturing using a novel approach that leverages hexafluoroacetylacetonate vapor to selectively etch metal surfaces. The process involves first oxidizing the metal surface to form a volatile compound, then exposing it to hexafluoroacetylacetonate vapor at elevated temperatures, and finally pumping the resulting volatile compound out of the chamber. This selective etching enables precise control over metal layer thickness without damaging the underlying substrate.

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Etching method and apparatus for selectively etching metal films in semiconductor devices. The method employs a mixed gas supply system that combines etching gases like Hfac and nitrogen monoxide with a reducing gas like hydrogen. The system optimizes etching conditions based on the specific metal film composition, with optimal conditions determined by the film-forming method. This approach enables precise control over etching rates and surface roughness for both metal films, particularly when traditional wet etching methods are insufficient.

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Dry non-plasma treatment system and method for chemical treatment and heat treatment of semiconductor substrates. The system employs anhydrous halogen compounds to selectively etch metal layers while maintaining underlying materials intact. The treatment process involves controlled exposure to a halogen compound at first temperature setting followed by temperature increase to a second setting for metal removal. This approach enables precise control over etch selectivity between metals and underlying materials, enabling the fabrication of features with improved patterning and patterning control.

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Etching titanium-containing material layers with controlled selectivity to alternating metals and dielectrics through selective etching of a titanium-containing material layer using a halogen-containing gas environment. The method employs a controlled gas environment to selectively etch the titanium-containing material layer while maintaining the dielectric layer, enabling precise control over etch selectivity and pattern integrity.

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Atomic layer etching (ALE) technique for semiconductor devices and substrate processing apparatus that improves etching control through a novel cycle-based approach. The method involves alternating between etching and purge cycles to maintain precise etching conditions, eliminating the conventional pressure-dependent etching variability. The purge step helps maintain the etching environment, while the alternating cycles ensure uniform etching profiles across the substrate surface. This approach enables precise control over etching conditions, reducing the number of etching steps required to achieve complex patterning.

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Dry etching method for copper thin films that achieves nanoscale patterning without plasma etching and re-deposition issues. The method employs a reactive gas containing a non-plasmaized halogen element to form a copper halide layer on the copper thin film. The layer is then selectively removed using plasma-activated inert gas or inert gas mixtures, achieving precise control over etch rates and patterns. This approach enables dry etching of copper thin films at nanometer scales without the challenges of plasma etching and re-deposition.

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A method for filling features in semiconductor devices using a controlled etching process to create void-free tungsten deposition. The method involves depositing a metal precursor, exposing the deposited metal to a halogen-containing gas to modify its surface, and then directing the metal to selectively etch the modified surface. This process enables complete tungsten deposition into features with small apertures, even when conventional methods fail due to incomplete deposition or non-conformal coverage. The etching process is precisely controlled to maintain the modified surface, allowing for complete tungsten deposition while preventing unwanted etching of the underlying barrier layer.

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A semiconductor manufacturing method for etching a film containing transition metals on a wafer surface. The method employs a controlled gas supply system that maintains the wafer temperature during complexation and subsequent etching steps. The system regulates the gas supply to create a temperature-dependent complexation region, where the transition metal film forms a stable organometallic complex. This controlled complexation region enables the formation of a uniform film structure during etching, while maintaining the film's stability across temperature ranges.

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Dry etching method for selectively removing metal-containing materials from semiconductor devices without plasma-based etching. The method employs a halogen fluoride-based dry etching gas that selectively etches metal-containing targets while leaving non-target areas intact. The etching process is performed at controlled temperatures and pressures, allowing precise control over the etching rate and selectivity. This approach enables the selective removal of metal-containing materials from semiconductor devices without compromising the integrity of the underlying structure.

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