Techniques to Improve Light Absorption in Quantum Dot Solar Cells

Photovoltaic cells with enhanced efficiency through nanomaterial integration, enabling broader spectral absorption and improved charge carrier transport. The cells incorporate quantum dots, nanowires, and nanostructures with unique optical and electronic properties, specifically designed to overcome conventional solar cell limitations. By precisely controlling these nanomaterials, the cells achieve significant improvements in energy conversion efficiency, enabling more efficient solar energy conversion.

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Heterojunction PbS quantum dot solar cell with enhanced light absorption and charge collection through nanostructured PN junction layers. The cell features a stacked glass substrate with a nano-patterned PbS quantum dot layer, followed by a PN junction layer with ZnO nanoparticles as optical antennas. The ZnO nanoparticles serve as efficient light-harvesting materials while maintaining electronic inertness, enabling improved charge collection and filling factor. The nanostructured architecture enables efficient light absorption and carrier transport through the PbS quantum dot layer, while the PN junction layer enhances charge collection at the contact interface.

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Silver telluride-zinc sulfide core-shell structure quantum dots for enhanced solar concentrator performance. The dots achieve high near-infrared emission while maintaining environmental safety through the use of silver telluride and zinc sulfide. The core-shell structure provides improved stability and photoluminescence quantum yield compared to conventional quantum dots. The preparation method enables the synthesis of these quantum dots through a controlled thermal treatment process that preserves their photoluminescent properties.

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Multi-intermediate band quantum dot solar cell with improved efficiency by using multiple quantum dot layers with different bandgaps to absorb a broader range of low-energy photons. The cell has a stack of quantum dot layers on an N-type semiconductor, each layer having a different bandgap. This allows absorption of sub-bandgap photons that cannot be absorbed by a single intermediate band. The layers are sandwiched between N-type and P-type semiconductors to form a solar cell.

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Broad-spectrum, high-absorptivity light absorption layer for solar cells with improved efficiency compared to conventional layers. The layer comprises a ferroelectric nanoparticle layer, a semiconductor quantum dot layer, and an underlying substrate. The ferroelectric nanoparticles and quantum dots absorb light across a wide spectrum. The ferroelectric nanoparticles have high absorption in the visible region, while the quantum dots absorb in the UV-blue range. This broadens the overall absorption spectrum compared to just quantum dots. The ferroelectric layer also improves light absorption by scattering and trapping light. The layer preparation involves depositing the layers using techniques like pulsed laser deposition.

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Quantum dot laminated solar cell with high efficiency by utilizing a transparent conductive intermediate layer between the front and rear cells. The cell structure includes a front cell with a quantum dot layer, a transparent conductive middle layer, a rear cell with a quantum dot layer, and a counter electrode. The transparent middle layer improves light absorption and utilization compared to conventional stacked cells.

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Lead sulfide quantum dot solar cell structure and its preparation method that enhances photoelectric conversion efficiency through a novel zinc oxide photoactive layer with optically wrinkled structure. The zinc oxide layer incorporates micro-protrusions that create a gully-like depression pattern between adjacent protrusions, effectively increasing light absorption while maintaining structural integrity. This unique optical structure enables improved light absorption and electron transport properties, leading to enhanced solar cell performance.

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Quantum dot intermediate zone solar cell with semiconductor nanopore structure that achieves higher efficiency than traditional quantum dot solar cells by exploiting the unique optical properties of quantum dot interband transitions. The cell incorporates periodic semiconductor nanopore structures with dielectric layers that contain quantum dots and spacers, enabling the creation of a quantum dot intermediate zone. The dielectric layers are composed of quantum dots and a spacer layer, with the buffer layer forming a type II quantum dot structure. This arrangement enables the creation of an intermediate zone with enhanced absorption of photons below the semiconductor bandgap, while maintaining carrier recombination rates. The cell achieves higher efficiency than conventional quantum dot solar cells through the controlled absorption of photons in the intermediate zone.

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Environmental cadmium-free quantum dots with improved performance for display, biological, and solar applications. The quantum dots achieve enhanced luminescence efficiency, reduced emission half-width, and enhanced stability compared to conventional cadmium-based quantum dots. The ZnS-based quantum dots exhibit superior properties, including higher quantum yields, narrower emission spectra, and improved thermal and water resistance, making them suitable for applications requiring high-performance quantum dots.

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Quantum dot solar cells that achieve enhanced carrier recombination inhibition through a novel nitride semiconductor modification layer. The layer, comprising a wide-bandgap material like ZnS, Al2O3, or HfO2, is deposited on the surface of quantum dots to create a barrier between the photogenerated carriers and the electrolyte interface. This modification layer enables precise control over the layer thickness, ensuring optimal carrier transport while minimizing recombination. The layer's thickness is precisely engineered between 1-10nm, with optimal performance achieved at 2-5nm. This approach enables the creation of quantum dot solar cells with significantly improved efficiency compared to conventional methods.

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A method for enhancing the efficiency of solar cells by using a layer-by-layer self-assembly ZnSe/ZnS core-shell structure with quantum dots. The method involves depositing ZnSe/ZnS quantum dots with negative surface charge and ZnSe/ZnS quantum dots with positive surface charge through a spin-coating process at low speeds. These core-shell structures are then assembled through layer-by-layer self-assembly to form a fluorescence down transfer layer. The core-shell structure enables efficient transfer of energy from ultraviolet photons to the solar cell's p-n junction, thereby improving spectral response and overall efficiency.

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A light absorption layer for solar cells that enables efficient two-stage light absorption through the formation of an intermediate band in the semiconductor material. The layer contains densely dispersed quantum dots in a bulk semiconductor with bandgap energies between 2.0 eV and 3.0 eV, resulting in an intermediate band that facilitates the transition between valence and conduction bands. The layer has a porosity of less than 10% and exhibits superior quantum yield compared to conventional absorption layers. This intermediate band structure enables the absorption of both short and long wavelengths, leading to improved solar cell efficiency.

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Nanotechnology-enhanced solar cells that achieve higher power conversion efficiency by incorporating silicon quantum dots (SiQDs) in a zinc oxide matrix. The SiQDs, which absorb ultraviolet (UV) radiation and re-emit visible light, significantly enhance the solar cell's spectral conversion capability. By embedding these quantum dots within the ZnO matrix, the solar cells can capture a broader spectrum of solar radiation, leading to improved energy conversion efficiency.

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A method for preparing high-efficiency quantum dot solar cells by growing multilayer quantum dots on chamfered substrates. The chamfered substrate provides enhanced uniformity and control over the quantum dot growth process, while the chamfered surface inhibits dot migration. This approach enables precise control over the quantum dot layer thickness and distribution, leading to improved solar cell performance.

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Quantum dot heterojunction solar cells with enhanced photoelectric conversion efficiency through the integration of quantum dots with multiferroic/ferroelectric layers. The heterojunction structure combines a quantum dot light-absorbing layer with a multiferroic/ferroelectric layer, enabling efficient charge separation and carrier transport. This architecture addresses the limitations of conventional solar cells by addressing carrier diffusion limitations and enhancing photocurrent generation. The multiferroic/ferroelectric layer provides improved electron transmission and charge transport properties, while the quantum dot layer enhances light absorption. The heterojunction architecture enables high-efficiency solar cells with improved water-splitting capabilities.

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All-solid-state solar cells based on simultaneous deposition of quantum dots and a novel preparation method achieve high efficiency, low cost, and stability through a novel device architecture. The solar cells employ quantum dots as light-absorbing materials, which are deposited simultaneously with the photovoltaic layer through a novel deposition process. This approach eliminates the need for organic solvents and high-temperature processing, while maintaining the quantum dot's inherent properties. The device architecture enables efficient charge carrier collection and transport, resulting in improved photovoltaic performance compared to conventional quantum dot solar cells.

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Ternary quantum dots with π-type core-shell structure, prepared through a novel synthesis method that enables efficient electron injection and carrier suppression in sensitized solar cells. The synthesis involves controlling the core particle size and shell thickness through precise composition and reaction conditions, while maintaining the core-shell structure. This approach enables the formation of π-type core-shell quantum dots with a wide spectral response range, high conduction band energy level, and low defect state density, which significantly improves the photoelectric conversion efficiency of quantum dot-sensitized solar cells.

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Heterostructured quantum dots with enhanced light absorption properties, specifically copper-selenium-sulfur quantum dots, which enable efficient conversion of solar energy into hydrogen through photoelectrochemical cells. The heterostructure combines the unique light absorption capabilities of the quantum dots with the stability of a cadmium sulfide outer layer, overcoming common limitations in quantum dot-based photoelectrochemical cells.

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Quantum dot composite materials for enhancing photovoltaic cell efficiency by leveraging quantum dots in polymer matrices. The materials combine quantum dots with polymer matrices to create novel photovoltaic cells that can capture and convert UV light more effectively than traditional photovoltaic materials.

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All-inorganic perovskite solar cells with enhanced photoelectric conversion efficiency through CdSe/CdS quantum dot modification. The modification involves surface engineering of CdSe/CdS quantum dots with CdS/CdSe/CdS layers to create a passivated surface with reduced interfacial energy and surface defects. This approach enables improved charge carrier transmission and reduced space charge accumulation, leading to increased photovoltaic efficiency in all-inorganic perovskite solar cells.

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