Techniques to Improve Light Absorption in Quantum Dot Solar Cells

Photovoltaic cells with enhanced efficiency through nanomaterial integration, enabling broader spectral absorption and improved charge carrier transport. The cells incorporate quantum dots, nanowires, and nanostructures with unique optical and electronic properties, specifically designed to overcome conventional solar cell limitations. By precisely controlling these nanomaterials, the cells achieve significant improvements in energy conversion efficiency, enabling more efficient solar energy conversion.

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Heterojunction PbS quantum dot solar cell with enhanced light absorption and charge collection through nanostructured PN junction layers. The cell features a stacked glass substrate with a nano-patterned PbS quantum dot layer, followed by a PN junction layer with ZnO nanoparticles as optical antennas. The ZnO nanoparticles serve as efficient light-harvesting materials while maintaining electronic inertness, enabling improved charge collection and filling factor. The nanostructured architecture enables efficient light absorption and carrier transport through the PbS quantum dot layer, while the PN junction layer enhances charge collection at the contact interface.

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Silver telluride-zinc sulfide core-shell structure quantum dots for enhanced solar concentrator performance. The dots achieve high near-infrared emission while maintaining environmental safety through the use of silver telluride and zinc sulfide. The core-shell structure provides improved stability and photoluminescence quantum yield compared to conventional quantum dots. The preparation method enables the synthesis of these quantum dots through a controlled thermal treatment process that preserves their photoluminescent properties.

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Multi-intermediate band quantum dot solar cell with improved efficiency by using multiple quantum dot layers with different bandgaps to absorb a broader range of low-energy photons. The cell has a stack of quantum dot layers on an N-type semiconductor, each layer having a different bandgap. This allows absorption of sub-bandgap photons that cannot be absorbed by a single intermediate band. The layers are sandwiched between N-type and P-type semiconductors to form a solar cell.

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Broad-spectrum, high-absorptivity light absorption layer for solar cells with improved efficiency compared to conventional layers. The layer comprises a ferroelectric nanoparticle layer, a semiconductor quantum dot layer, and an underlying substrate. The ferroelectric nanoparticles and quantum dots absorb light across a wide spectrum. The ferroelectric nanoparticles have high absorption in the visible region, while the quantum dots absorb in the UV-blue range. This broadens the overall absorption spectrum compared to just quantum dots. The ferroelectric layer also improves light absorption by scattering and trapping light. The layer preparation involves depositing the layers using techniques like pulsed laser deposition.

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Quantum dot laminated solar cell with high efficiency by utilizing a transparent conductive intermediate layer between the front and rear cells. The cell structure includes a front cell with a quantum dot layer, a transparent conductive middle layer, a rear cell with a quantum dot layer, and a counter electrode. The transparent middle layer improves light absorption and utilization compared to conventional stacked cells.

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Lead sulfide quantum dot solar cell structure and its preparation method that enhances photoelectric conversion efficiency through a novel zinc oxide photoactive layer with optically wrinkled structure. The zinc oxide layer incorporates micro-protrusions that create a gully-like depression pattern between adjacent protrusions, effectively increasing light absorption while maintaining structural integrity. This unique optical structure enables improved light absorption and electron transport properties, leading to enhanced solar cell performance.

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Quantum dot intermediate zone solar cell with semiconductor nanopore structure that achieves higher efficiency than traditional quantum dot solar cells by exploiting the unique optical properties of quantum dot interband transitions. The cell incorporates periodic semiconductor nanopore structures with dielectric layers that contain quantum dots and spacers, enabling the creation of a quantum dot intermediate zone. The dielectric layers are composed of quantum dots and a spacer layer, with the buffer layer forming a type II quantum dot structure. This arrangement enables the creation of an intermediate zone with enhanced absorption of photons below the semiconductor bandgap, while maintaining carrier recombination rates. The cell achieves higher efficiency than conventional quantum dot solar cells through the controlled absorption of photons in the intermediate zone.

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Environmental cadmium-free quantum dots with improved performance for display, biological, and solar applications. The quantum dots achieve enhanced luminescence efficiency, reduced emission half-width, and enhanced stability compared to conventional cadmium-based quantum dots. The ZnS-based quantum dots exhibit superior properties, including higher quantum yields, narrower emission spectra, and improved thermal and water resistance, making them suitable for applications requiring high-performance quantum dots.

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Quantum dot solar cells that achieve enhanced carrier recombination inhibition through a novel nitride semiconductor modification layer. The layer, comprising a wide-bandgap material like ZnS, Al2O3, or HfO2, is deposited on the surface of quantum dots to create a barrier between the photogenerated carriers and the electrolyte interface. This modification layer enables precise control over the layer thickness, ensuring optimal carrier transport while minimizing recombination. The layer's thickness is precisely engineered between 1-10nm, with optimal performance achieved at 2-5nm. This approach enables the creation of quantum dot solar cells with significantly improved efficiency compared to conventional methods.

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A method for enhancing the efficiency of solar cells by using a layer-by-layer self-assembly ZnSe/ZnS core-shell structure with quantum dots. The method involves depositing ZnSe/ZnS quantum dots with negative surface charge and ZnSe/ZnS quantum dots with positive surface charge through a spin-coating process at low speeds. These core-shell structures are then assembled through layer-by-layer self-assembly to form a fluorescence down transfer layer. The core-shell structure enables efficient transfer of energy from ultraviolet photons to the solar cell's p-n junction, thereby improving spectral response and overall efficiency.

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A light absorption layer for solar cells that enables efficient two-stage light absorption through the formation of an intermediate band in the semiconductor material. The layer contains densely dispersed quantum dots in a bulk semiconductor with bandgap energies between 2.0 eV and 3.0 eV, resulting in an intermediate band that facilitates the transition between valence and conduction bands. The layer has a porosity of less than 10% and exhibits superior quantum yield compared to conventional absorption layers. This intermediate band structure enables the absorption of both short and long wavelengths, leading to improved solar cell efficiency.

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Nanotechnology-enhanced solar cells that achieve higher power conversion efficiency by incorporating silicon quantum dots (SiQDs) in a zinc oxide matrix. The SiQDs, which absorb ultraviolet (UV) radiation and re-emit visible light, significantly enhance the solar cell's spectral conversion capability. By embedding these quantum dots within the ZnO matrix, the solar cells can capture a broader spectrum of solar radiation, leading to improved energy conversion efficiency.

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A method for preparing high-efficiency quantum dot solar cells by growing multilayer quantum dots on chamfered substrates. The chamfered substrate provides enhanced uniformity and control over the quantum dot growth process, while the chamfered surface inhibits dot migration. This approach enables precise control over the quantum dot layer thickness and distribution, leading to improved solar cell performance.

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Quantum dot heterojunction solar cells with enhanced photoelectric conversion efficiency through the integration of quantum dots with multiferroic/ferroelectric layers. The heterojunction structure combines a quantum dot light-absorbing layer with a multiferroic/ferroelectric layer, enabling efficient charge separation and carrier transport. This architecture addresses the limitations of conventional solar cells by addressing carrier diffusion limitations and enhancing photocurrent generation. The multiferroic/ferroelectric layer provides improved electron transmission and charge transport properties, while the quantum dot layer enhances light absorption. The heterojunction architecture enables high-efficiency solar cells with improved water-splitting capabilities.

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All-solid-state solar cells based on simultaneous deposition of quantum dots and a novel preparation method achieve high efficiency, low cost, and stability through a novel device architecture. The solar cells employ quantum dots as light-absorbing materials, which are deposited simultaneously with the photovoltaic layer through a novel deposition process. This approach eliminates the need for organic solvents and high-temperature processing, while maintaining the quantum dot's inherent properties. The device architecture enables efficient charge carrier collection and transport, resulting in improved photovoltaic performance compared to conventional quantum dot solar cells.

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Ternary quantum dots with π-type core-shell structure, prepared through a novel synthesis method that enables efficient electron injection and carrier suppression in sensitized solar cells. The synthesis involves controlling the core particle size and shell thickness through precise composition and reaction conditions, while maintaining the core-shell structure. This approach enables the formation of π-type core-shell quantum dots with a wide spectral response range, high conduction band energy level, and low defect state density, which significantly improves the photoelectric conversion efficiency of quantum dot-sensitized solar cells.

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Heterostructured quantum dots with enhanced light absorption properties, specifically copper-selenium-sulfur quantum dots, which enable efficient conversion of solar energy into hydrogen through photoelectrochemical cells. The heterostructure combines the unique light absorption capabilities of the quantum dots with the stability of a cadmium sulfide outer layer, overcoming common limitations in quantum dot-based photoelectrochemical cells.

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Quantum dot composite materials for enhancing photovoltaic cell efficiency by leveraging quantum dots in polymer matrices. The materials combine quantum dots with polymer matrices to create novel photovoltaic cells that can capture and convert UV light more effectively than traditional photovoltaic materials.

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All-inorganic perovskite solar cells with enhanced photoelectric conversion efficiency through CdSe/CdS quantum dot modification. The modification involves surface engineering of CdSe/CdS quantum dots with CdS/CdSe/CdS layers to create a passivated surface with reduced interfacial energy and surface defects. This approach enables improved charge carrier transmission and reduced space charge accumulation, leading to increased photovoltaic efficiency in all-inorganic perovskite solar cells.

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CsPbBr3 quantum dot-silicon composite solar cell that improves efficiency by adding a thin layer of CsPbBr3 quantum dots on the silicon chip. The quantum dots absorb short-wavelength UV light that silicon can't and convert it to visible light that silicon can absorb. This reduces reflection, increases short-circuit current, and external quantum efficiency at short wavelengths. The CsPbBr3 quantum dot film is spin-coated with thickness 20-50nm.

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Preparation of photoanode for co-sensitized quantum dot solar cells through the synthesis of Zn-Cu-In-Se (ZCISe) quantum dots. The synthesis of ZCISe quantum dots involves the controlled synthesis of Zn-Cu-In-Se nanocrystals in water, followed by their subsequent conversion to oil-soluble form. This enables the preparation of water-soluble ZCISe quantum dots that can be used to create co-sensitized photoanodes for quantum dot solar cells. The photoanode is then assembled by combining the ZCISe quantum dots with CdSe quantum dots, resulting in a co-sensitized photoanode that achieves high photocurrent and photoelectric conversion efficiency.

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A light absorption layer for solar cells that enables efficient two-stage light absorption through the formation of an intermediate band in a semiconductor matrix. The layer comprises quantum dots dispersed in a bulk semiconductor with a bandgap energy between 2.0 eV and 3.0 eV, forming an intermediate band. The quantum dots are exchanged with a halogen-containing ligand, resulting in a layer with an external quantum yield difference of 0.005% or more at 500 nm, 0.004% or more at 600 nm, and 0.002% or more at 900 nm. This layer enables the absorption of light in the 500 nm and 900 nm regions through the intermediate band, while maintaining a high quantum yield compared to traditional two-stage absorption methods.

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Graphene Schottky junction solar cells with enhanced photoelectric conversion efficiency through the incorporation of quantum dot intermediate bands. The solar cells incorporate multilayer InAs quantum dots into the graphene Schottky junction structure, where the quantum dots interact with each other and the graphene to generate intermediate bands in the GaAs bandgap. This mutual coupling enables broad absorption of the solar spectrum, leading to improved conversion efficiency compared to conventional GaAs-based Schottky junctions.

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Quantum dot solar cells prepared through a novel light-absorbing coating process that enables efficient deposition of high-quality quantum dots on photoanodes without compromising photovoltaic performance. The coating process involves depositing quantum dots onto photoanodes through a controlled chemical bath deposition method, followed by assembly of the solar cell components into a sandwich structure. This approach addresses the limitations of traditional methods by enabling direct deposition of quantum dots on photoanodes while maintaining high quantum dot quality and uniform distribution.

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Quantum dot solar cell with enhanced adsorption through a novel mixed solvent approach. The cell architecture integrates a photoanode, electrolyte, and counter electrode in a sandwich structure, with the photoanode surface modified using a mixed solvent containing quantum dots. This modified surface enables increased adsorption of the quantum dots onto the photoanode, overcoming the limitations of prior methods that rely on pre-synthesized quantum dots. The mixed solvent approach enables the creation of high-quality quantum dots with reduced defect states, thereby improving the photovoltaic performance of the solar cell.

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Solar cells with enhanced spectral response through the use of ZnSe/ZnS colloidal quantum dots. The solar cells incorporate ZnSe/ZnS colloidal quantum dots with negatively charged sulfhydryl groups and positively charged amino groups, which form a core-shell structure. These colloidal quantum dots are prepared through surface electrostatic interaction and are deposited in a layer-by-layer fashion onto a Si-based solar cell surface. The ZnSe/ZnS colloidal quantum dots enable efficient transfer of ultraviolet photons to the solar cell, thereby improving its spectral response beyond the conventional Si-based solar cells.

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Solar cell with improved photoelectric conversion efficiency through the use of a multilayer quantum well/1 type quantum dot structure in the active region. The cell features a lower electrode, a lower contact layer, a back field layer, an active region layer, a window layer, and an upper contact layer arranged from bottom to top. The active region layer comprises a multilayer type II quantum well/1 type quantum dot laminated structure, where the type I quantum dot layer is positioned on top of the type II quantum well layer. This configuration enables the efficient separation of electron and hole wave functions, which is critical for achieving high conversion efficiency in solar cells.

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Passivation of semiconductor nanoparticles using a solution-based approach to achieve high efficiency solar cells. The method involves treating semiconductor quantum dots with a solution containing a cationic reagent that selectively binds to surface anions, followed by treatment with a cation-containing reagent. This process forms a passivated core with cations, which enables the formation of high-efficiency solar cells through the absorption of visible and infrared light. The solution-based approach eliminates the need for organic ligands, enabling nanocrystal-to-nanocrystal passivation and improved carrier mobility.

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Quantum dot solar cell with enhanced light absorption through optimized quantum dot size distribution. The invention achieves improved light absorption by exploiting the unique optical properties of quantum dots when their size distribution is tailored to optimize energy band alignment. By controlling the size distribution of semiconductor nanoparticles in quantum dots, the invention enables the absorption of a broader range of wavelengths, including those corresponding to multiple band gaps, thereby enhancing the overall photoelectric conversion efficiency of the solar cell.

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Quantum dot solar cells with enhanced efficiency through a novel interface modification. The solar cells incorporate a self-assembled monolayer (SAM) layer at the interface between the quantum dot layer and a metal oxide layer, which contains a benzene ring with pi-pi interaction. This SAM layer protects the quantum dots from ligand exchange damage during the deposition process, leading to improved photovoltaic performance. The solar cells achieve a power conversion efficiency of 10.7% and demonstrate enhanced current density, voltage, and charging efficiency compared to conventional quantum dot solar cells.

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Optimizing quantum dot solar cell performance through precise control of quantum dot surface chemistry and material properties. The method employs a novel ligand exchange process that precisely binds ligands to quantum dots, enabling targeted modulation of their surface chemistry and bandgap energy. This approach enables the creation of quantum dot solar cells with improved short-circuit current density, open-circuit voltage, figure of merit, and power conversion efficiency by precisely controlling the quantum dot surface chemistry and bandgap energy.

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Solar cell with enhanced photoelectric conversion efficiency through a novel quantum dot-sensitized structure. The solar cell comprises a conductive substrate, a photoanode, a quantum dot sensitizer, an electrolyte, a counter electrode, and a transparent conductive glass. The quantum dot layer is a CdS, CdSe, or CdTe quantum dot layer, with a CuxSe shell layer. The shell layer is a CuxSe or CuxTe layer. The sensitization layer is formed by depositing a photoanode on the substrate using a continuous ion layer adsorption and reaction method, followed by the deposition of a quantum dot layer on the photoanode. The sensitization layer is then encapsulated with the electrolyte and completed with the counter electrode.

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Intermediate-belt solar cells combining quantum dots and nanowire arrays to enhance light absorption and spectral range. The composite structure incorporates quantum dots that absorb light in the intermediate band, while nanowire arrays act as light traps to capture and concentrate this absorbed light. This dual-function architecture enables improved light absorption beyond traditional solar cells, with enhanced spectral range and increased light trapping efficiency.

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A photoelectric conversion layer for solar cells that enhances absorption and conversion efficiency through a novel quantum dot arrangement. The layer comprises a quantum dot-containing structure with aligned quantum dots along its thickness direction, where each dot is connected by a protruding middle dot that extends beyond the adjacent dot's surface. This unique dot arrangement enables efficient carrier excitation in the quantum dot material while maintaining uniform layer thickness. The protruding middle dot acts as a bridge between adjacent quantum dots, facilitating direct carrier transfer between them. This design enables improved absorption and conversion efficiency compared to conventional quantum dot structures.

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A solar cell design that enhances quantum dot absorption through an optimized optical path length. The design incorporates a superlattice semiconductor layer with quantum dots, where the barrier layer is engineered to increase the optical path length of intersubband transitions. This approach enables more efficient absorption of light in the 1100-1600 nm and 2200 nm spectral ranges, particularly for quantum dots with narrow bandgaps. The optical path length increasing elements, including texture structures and reflective films, further enhance absorption by increasing the optical path length of intersubband transitions.

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A colloidal quantum dot-sensitized solar cell substrate with improved conversion efficiency through precise control of quantum dot size and distribution. The substrate incorporates colloidal quantum dots with controlled particle sizes and closely packed structures, enabling efficient light absorption and charge carrier collection. The precise control of quantum dot size and distribution enables optimal absorption and charge transport properties, resulting in higher conversion efficiency compared to conventional colloidal quantum dot solar cells.

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A solar cell with enhanced efficiency through a novel heterojunction structure combining carbon quantum dots (CQDs) with silicon nanowires. The cell features a N-type silicon substrate with a metal back electrode layer, followed by a thin layer of N-type silicon nanowires on the surface. Above this nanowire layer, a P-type carbon quantum dot thin film is deposited, followed by a metal electrode layer. The carbon quantum dot layer serves as a photoactive material, while the metal electrode layer enables efficient electron transport. The nanowire structure enhances carrier collection and light absorption, while the carbon quantum dot layer provides a high-efficiency photocatalyst. This architecture enables high-efficiency solar cells with improved light absorption and electron collection compared to conventional solar cells.

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PbS quantum dot heterojunction solar cells with improved performance through solvent control. The invention utilizes a novel preparation method where PbS quantum dots are dispersed in solvents with different polarity, viscosity, and boiling points during film formation. This approach enables controlled PbS film morphology and mass density, which in turn enhances the heterojunction's light absorption and charge collection efficiency. The solvent selection process optimizes the PbS quantum dot photoactive layer properties while maintaining device transparency.

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Hybrid quantum dot organic solar cells (HyQDOSC) that achieve higher power conversion efficiency (PCE) than conventional solar cells by leveraging thin-film quantum dot layers. The novel approach involves integrating PbS quantum dots into organic photovoltaic layers, where their photoluminescent properties enable efficient absorption in the near-infrared spectrum. The photovoltaic layer itself is comprised of a conjugated polymer (PTB7) and a bulk heterojunction (BHJ) material. A thin-film PbS quantum dot layer with a thickness comparable to the photovoltaic layer thickness is used as a photosensitizer, enabling enhanced photocurrent generation through localized exciton absorption. The solar cell achieves PCEs above 10% by combining the benefits of both quantum dot and organic photovoltaic materials.

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Quantum dot sensitized solar cells with enhanced stability and conversion efficiency through controlled deposition of quantum dot thin films. The cells feature a porous substrate with a passivation layer followed by a quantum dot layer prepared using an ultrasonic spray method. This controlled deposition enables precise control over quantum dot thickness and distribution, while maintaining the stability of the battery and conversion process. The ultrasonic spray method allows for uniform quantum dot deposition with minimal surface defects, leading to improved photovoltaic performance.

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Solar cell with enhanced carrier extraction efficiency through a novel quantum dot layer design. The solar cell features a quantum dot layer sandwiched between p-type and n-type semiconductor regions, with the quantum dot layer's band structure engineered to create a coherent mini-band across the entire layer. This is achieved by gradually increasing the quantum dot size as it transitions from the central portion to the semiconductor interfaces, effectively creating a resonant tunneling effect between adjacent quantum levels. The design enables efficient carrier extraction from the quantum dot layer to the p-type and n-type semiconductor regions, overcoming conventional limitations in carrier collection.

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Quantum dot dye-sensitized solar cell (QDDSSC) that enhances infrared absorption and light absorption through the incorporation of quantum dots and metal nanoparticles in the semiconductor electrode layer. The QDDSSC achieves higher conversion efficiency by leveraging the unique optical properties of quantum dots and metal nanoparticles in the dye-sensitized solar cell architecture.

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Quantum dots for solar cells that enhance light absorption beyond conventional semiconductor structures. The quantum dots are composed of single-crystal polyhedral structures with a polyhedral shape surrounded by planes, with particle sizes between 1-10 nm. These quantum dots are deposited on the solar cell surface, where they absorb light across a broad spectrum due to their unique structural properties. The quantum dots enable higher light absorption efficiency compared to conventional semiconductor structures, thereby achieving theoretical limits of solar cell efficiency.

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Enhancing the efficiency of photovoltaic cells through the use of quantum dots in their optical absorber layers. The quantum dots, which can be made from various semiconductor materials such as PbS, GaSb, InSb, InAs, and CIS, are engineered to cover a broad spectrum of solar energy, including infrared, visible, and ultraviolet light. By incorporating these quantum dots into the optical absorber layer, the photovoltaic cells can achieve higher conversion efficiencies compared to conventional solar cells. The quantum dots enable the separation of charge carriers as soon as they are generated, significantly reducing charge recombination and increasing overall efficiency.

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Solar cells with enhanced photoelectric conversion efficiency through the application of quantum dots. The solar cells incorporate quantum dots in a three-layer configuration with a barrier layer surrounding the quantum dots. The barrier layer has a specific resistance lower than the quantum dots in the central portion, enabling carrier collection. The barrier layer's thickness can be controlled to optimize carrier collection efficiency. The solar cells achieve improved conversion efficiency by maximizing carrier collection through the barrier layer while maintaining high quantum confinement. The barrier layer's transparency is achieved through the use of a transparent conductive film, such as AZO, with a bandgap of 3.5 eV or less.

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Quantum dot solar cell with enhanced light absorption and carrier generation through a novel photodetector design. The cell features a photodetector layer containing quantum dots with a core-shell structure, where the semiconductor core serves as the active photovoltaic material. The photodetector layer is arranged in a direction perpendicular to the photovoltaic layer, enabling efficient light absorption and carrier generation. The photodetector layer's unique architecture enables efficient reflection of incident light, while the core-shell structure of the quantum dots enhances carrier excitation and recombination. This architecture significantly improves the solar cell's light absorption efficiency compared to conventional photodetector designs.

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A solar battery that utilizes strain-engineered quantum dots to enhance light absorption and conversion efficiency. The solar cell incorporates strain-modulated quantum dots within a silicon substrate, where the strain engineering enables precise control over the forbidden band width. This enables optimal matching between the quantum dot's energy levels and the solar spectrum, resulting in improved conversion efficiency compared to conventional quantum dot solar cells. The strain engineering process involves creating strain-induced lattice distortions in the silicon substrate, which are then used to create the quantum dots. The resulting solar cells achieve higher efficiency through enhanced light absorption and collection.

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