Interdigitated Back Contact Solar Cells

A back contact solar cell that improves the resolution between the first and second doped semiconductor layers and reduces the difficulty in accurately setting their polarity. The cell features a surface with a positive pyramid suede structure, which enhances the visibility of the doped semiconductor layers through their morphology. This design enables precise identification of the first and second doped layers, particularly when their conductive structures are arranged with opposite polarity, thereby preventing short circuits and improving electrical stability in back contact solar cells.

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Reducing recombination losses in back-contact solar cells by optimizing electrode spacing and collector distribution. The cell features a silicon substrate with alternating doped polysilicon layers, each containing finger-shaped regions with collector electrodes. The electrodes in each layer are arranged with alternating collector spacing and distribution patterns, ensuring uniform collector coverage across the polysilicon regions. This design enables efficient carrier transport between the doped regions and the collector electrodes, minimizing recombination losses.

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Manufacturing solar cells with enhanced efficiency through novel patterning strategies. The method involves creating a doped region on the back surface of the substrate, followed by the formation of a thin dielectric layer and semiconductor layer. A second doped region is created in the semiconductor layer, and two conductive contacts are established. This configuration enables the formation of a solar cell with improved electrical isolation and current collection properties, thereby enhancing overall efficiency.

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Solar cell with improved efficiency through a novel interdigitated back contact architecture. The cell features a substrate with staggered regions and recessed gap regions, where the first and second regions are separated by the gap regions. A conductive layer is formed over the back surface, and a second conductive layer is deposited on top. The second layer is selectively removed through laser ablation, creating a gap region structure. The resulting cell architecture enables enhanced minority carrier transport and collection through the gap regions, while maintaining the conventional p-n junction ratio.

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Solar cells and photovoltaic modules with improved back contact technology. The cells incorporate a dividing line between the N-type and P-type regions, with holes at the boundaries. This design enables enhanced electrical isolation and reduced back contact resistance, leading to improved efficiency and reliability in solar power generation.

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A back-contacting solar cell with improved process stability through selective contact regions. The cell features a selective contact layer that selectively collects charge carriers at the interface between the shadow face and the metal-chalcogen compound layer, while maintaining electrical isolation between the shadow face and the front contact. This selective contact layer enables precise charge carrier collection and transfer without the need for precise doping alignment, reducing recombination and increasing conversion efficiency. The selective contact layer is deposited within the shadow face region and selectively absorbs charge carriers, while the metal-chalcogen compound layer outside the selective contact region serves as the primary contact point for the front contact.

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Back contact solar cell design that enables low-cost mass production of full back electrode contact solar cells while maintaining efficiency. The cell has a semiconductor substrate, tunneling oxide layers, a doped polysilicon layer, and two metal electrodes. The tunneling oxide layers are patterned with gaps. The semiconductor substrate has exposed suede at those gaps. One metal electrode contacts the substrate at those gaps while the other electrode contacts the polysilicon. This provides full back contact without polishing the back surface. The patterned tunneling oxide layers create localized contact points instead of a full-surface contact.

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Solar cells with reduced recombination losses through a novel contact arrangement. The cells feature a back-contact configuration where the second contact type is integrated into the semiconductor substrate, with the first contact type on the front side. This arrangement eliminates the conventional front-side contact and base-side contact interfaces, reducing series resistance and recombination currents. The contact interface is formed through localized laser irradiation, creating a passivated region that prevents charge carrier flow. The method enables high-efficiency solar cells with reduced doping requirements, as the second contact type can be selectively integrated into the substrate.

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Interdigitated back contact solar cell with improved reverse bias characteristics through a novel doping configuration. The cell features a monocrystalline wafer with a first contact layer comprising a thin silicon oxide layer and highly doped polycrystalline silicon, followed by a gap between the first and second contact layers. A second contact layer with a thin silicon oxide layer and highly doped polycrystalline silicon is then deposited on the same surface. An additional p-doped region is created between the first and second contact layers. This configuration enables enhanced reverse bias performance by creating a p-doped region between the contact layers, which improves the solar cell's ability to withstand reverse bias stress.

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Busbar-free interdigitated back contact (IBC) solar cells achieve high efficiency through a novel metallized electrode structure. The structure comprises alternating finger electrode lines and conductive lines, with the finger lines arranged in a staggered pattern. The finger lines are connected to the conductive lines, which are spaced apart from each other. This design eliminates the conventional busbar, reducing manufacturing complexity while maintaining optimal current collection paths. The structure enables efficient collection of photovoltaic currents from both photovoltaic faces, thereby enhancing overall solar cell performance.

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Solar cell design with higher efficiency compared to conventional solar cells. The cell has doped regions on one side of the substrate with higher doping concentration than the substrate. This reduces the saturation current density and improves open-circuit voltage. The doped regions are adjacent to the substrate surface instead of below the electrode to avoid issues like shrinking bandgap and electric field decline. The cell also has textured surfaces with protrusions on one side to improve internal reflection and reduce optical loss. The textured side has wider regions with lower doping concentration. The electrodes contact the conductive layer on this side instead of the substrate side. This prevents transverse current path issues.

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A method for fabricating high-efficiency solar cells using ion implantation and selective wet etching. The method employs a novel approach to creating back-contact solar cells by using ion implantation to generate both N-type and P-type emitter regions, followed by selective wet etching to preserve the implanted regions while removing the non-implanted regions. This process enables the creation of high-efficiency solar cells with all back-contact structures, where the implanted regions serve as mask layers during wet etching.

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A back-contact solar cell with integrated auxiliary electrodes that enables efficient and cost-effective solar cell modules. The cell features a substrate with light-receiving and back surfaces, where positive and negative electrodes are arranged on the back surface. Auxiliary positive and negative electrodes are strategically placed on the light-receiving surface and connecting regions, enabling direct electrical connection between adjacent cells. The auxiliary electrodes are formed on the connecting regions' side surfaces, facilitating efficient electrical connections between cells. This design enables the formation of solar cell modules with a large light-receiving area through the integration of auxiliary electrodes, while maintaining conventional back-contact architecture.

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Interdigitated back contact thin film solar cells that enhance photoelectric conversion efficiency through a novel fabrication approach. The cells feature a transparent conductive layer located on the side of the absorbing layer away from the glass substrate, thereby preventing electrode blocking and reducing parasitic absorption. This design eliminates the need for transparent conductive films that typically cause absorption on the glass substrate, allowing for improved short-circuit current density and overall solar cell performance.

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A back-contact solar cell that enhances efficiency by creating a passivation contact structure through sequential doping and oxide layers. The cell features a silicon wafer substrate with a front surface and a back surface, where alternating doping regions are arranged in a linear pattern. A first passivation layer is applied on the doped regions, followed by a second passivation layer on the front surface. A metal electrode penetrates through the first passivation layer and the doped regions, forming an ohmic contact. This dual-passivation structure provides superior surface passivation and contact performance compared to conventional back-contact designs, enabling higher efficiency and reduced recombination losses in the metal contact region.

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Solar cell with enhanced efficiency through a novel finger electrode structure. The cell features alternating semiconductor layers with different conductivities on the back surface, with a finger electrode that incorporates a concavo-convex pattern. The finger electrode's surface has a mean square root angle of 21° to 59°, and its base layer is a thin-film metal with a main metal layer laminated on the back surface. The resist pattern is applied to create the finger electrode's concavo-convex shape, which is then etched to expose the underlying metal layer. This design enables precise control of the finger electrode's geometry while maintaining the resist pattern's integrity.

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Solar cell with enhanced back electrode structure that improves efficiency through a novel p-type semiconductor substrate configuration. The cell features a p-type semiconductor substrate with a p-type emitter region and a n-type base region on the back surface, where a p-type base region with higher impurity concentration than the substrate is created. A negative charge layer is formed on the back surface, and a p-type base region is selectively created through a heat treatment process that increases the p-type impurity concentration in the base region adjacent to the base electrode. This configuration enables enhanced electron collection and reduced recombination at the base region, thereby improving the overall solar cell efficiency.

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Solar cells and solar cell modules that achieve high long-term reliability, high conversion efficiency, and improved output maintenance through novel electrode configurations. The solar cells feature finger-shaped electrodes with strategically positioned auxiliary electrodes connecting their longitudinal ends, enabling local electrical continuity while maintaining structural integrity. This configuration enables improved electrical performance, reduced wiring resistance, and enhanced durability compared to conventional finger electrode designs. The modules employ a vertical bus configuration with finger electrodes connected in parallel, ensuring reliable electrical connections while maintaining structural integrity.

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Back contact solar cell with improved efficiency and cost-effectiveness through optimized passivation structure. The cell features a p-type substrate with interdigitated p-n junctions, a negative electrode grid pattern on the n-type doped region, and a positive electrode grid pattern on the p-type region. This arrangement enables enhanced tunneling current through the interdigitated p-n junctions while maintaining efficient contact between the back contacts and the substrate. The negative electrode grid pattern on the n-type region serves as a gate electrode, while the positive electrode grid pattern on the p-type region serves as a source electrode. The negative electrode grid lines connect the negative contacts, while the positive electrode lines connect the positive contacts.

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Solar cell with interdigitated back contact and tunneling oxide junctions, featuring a novel interdigital pattern of back contact electrodes and tunneling oxide junctions. The solar cell incorporates interdigitated back contact electrodes and tunneling oxide junctions, where the back contact electrodes form an interdigital pattern while the tunneling oxide junctions are arranged in a tunneling configuration. This configuration enables efficient electron collection and transport across the solar cell interface.

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