Passivated Emitter and Rear Contact (PERC) Solar Cells

Solar cell with enhanced passivation and carrier recombination reduction through optimized edge contact design. The cell features a passivation layer that covers the first surface and at least a portion of the first side surface, with an additional passivation layer on the second surface. This dual-passivation approach provides improved passivation at the cut edges, where conventional passivation layers often fail, while maintaining high efficiency. The design also incorporates anti-reflective coatings on both surfaces to enhance light absorption. The cell architecture enables reduced carrier recombination at the cut edges through optimized contact geometry, resulting in improved efficiency and power conversion.

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Solar cell with enhanced passivation performance through optimized tunnel oxide structure. The cell features a tunnel oxide layer with a doping concentration gradient that transitions from a higher doping concentration in the metallized region to a lower doping concentration in the non-metallic region. This gradient enables controlled doping of the tunnel oxide layer, where the doping concentration increases in the metallized region and decreases in the non-metallic region. The doping process is achieved through a multi-step conversion of the tunnel oxide layer into a doped conductive layer, with doping elements entering the non-metallic region and forming conductive pathways. This gradient doping approach enhances the tunnel oxide's passivation properties while maintaining the structural integrity of the solar cell.

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Solar cells with improved backside passivation through a novel polysilicon stack structure. The cells feature a silicon base layer, a tunnel oxide layer, a doped polysilicon stack, and a second anti-reflection layer. The polysilicon stack provides enhanced backside passivation compared to conventional polysilicon-only structures, while the tunnel oxide layer enables efficient electron transfer between the polysilicon and metal contacts.

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Highly efficient back-contacted solar cell with passivated contacts that reduces recombination and improves efficiency. The cell has interdigitated electrodes on the back contacting doped regions of opposite polarity. The doping in the regions is balanced to create the opposite polarity. This eliminates the need for complex doping steps or masks on the back. The front has lower doping compared to the back. Passivation layers on front and back further reduce recombination. The cell is manufactured by depositing a polycrystalline silicon layer on a dielectric layer, locally doping the back regions, and forming passivation layers.

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Solar cell with improved passivation performance through a novel tunneling oxide layer structure. The cell features a semiconductor substrate with a front surface and rear surface, an emitter, a tunneling oxide layer, a doped conductive layer, a rear passivation layer, a front electrode, and a rear electrode. The tunneling oxide layer is positioned between the rear surface and the doped conductive layer, creating a tunneling oxide passivation structure that enhances charge carrier transport through the metal contact area. This architecture addresses the limitations of conventional tunneling oxide layers by incorporating a tunneling oxide layer directly between the metal contact and the semiconductor surface.

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Front-side wide bandgap doped combined passivation back contact solar cell design that reduces parasitic absorption and improves efficiency compared to conventional back contact solar cells. The cell has three semiconductor layers on the back and one on the front of the silicon wafer. The front layer has a wider bandgap doped polysilicon with carbon or oxygen co-doping to match the back layers. This reduces front side parasitic absorption while preserving passivation. The layers are formed by tube PECVD and annealing instead of plate PECVD. The front layer thickness is 4-15nm with 2-10% volume of the back layer. This reduces front side parasitic absorption while preserving passivation. The cell structure reduces parasitic absorption compared to conventional back contact cells with amorphous silicon front layers, improving short circuit current and conversion efficiency

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Passivation contact solar cell with improved conversion efficiency by adding a backside passivation layer stack. The passivation structure is sandwiched between the silicon substrate and a cover layer. It consists of a tunneling oxide layer, an N-type doped polysilicon film, and the cover layer. The thickness of the doped polysilicon layer is 30-100nm. This backside passivation improves the carrier lifetime, surface recombination, and conversion efficiency of the solar cell.

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A solar cell with enhanced efficiency through optimized back contact preparation. The cell features a silicon wafer with a light-receiving surface and back side, where the tunneling oxide layer, doped polysilicon layer, and corrosion-resistant film layer are sequentially deposited. The doped polysilicon layer has a specific thickness-to-depth ratio that maximizes emitter extension into the silicon chip while maintaining series resistance and surface passivation requirements. The preparation method employs laser diffusion to precisely control the doping profile and thickness of these layers, enabling the creation of a uniform emitter-doped region that enhances power conversion efficiency.

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Passivated contact solar cells with selective emitter and components and systems that enhance solar cell efficiency by addressing carrier recombination through selective emitter formation. The selective emitter is created through selective doping of the metal contact region, while the front contact is formed using a passivation structure that includes a thin tunnel oxide layer and doped polysilicon layer. This selective emitter and front contact architecture enables improved carrier collection and reduced recombination at the metal contact interface, thereby increasing the conversion efficiency of crystalline silicon solar cells.

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Selective passivated contact solar cell that improves efficiency compared to conventional selectively passivated cells while reducing manufacturing complexity. The cell has a selective passivation structure on the front and back surfaces. The front surface has grid and non-grid regions. In the grid region, a thin silicon oxide layer is followed by a thin doped polysilicon layer. In the non-grid region, thicker oxide and silicon nitride layers are used. The back surface has a similar layering but with phosphorus-doped polysilicon instead. This selective passivation reduces light absorption compared to full coverage. The cell is made by laser oxidation and etching to create the selective layers without masks or patterning.

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Electron selective passivation contact structure for high efficiency crystalline silicon solar cells that improves conversion efficiency by reducing recombination and parasitic absorption. The structure involves an electron selective contact made of a transparent metal like silver on top of a thin oxide layer. The transparent metal allows electron transmission while the oxide passivates against recombination. The oxide layer can be zinc oxide or silicon oxide. The structure is applied to the front or back contact of the solar cell. It enables electron selective collection without parasitic absorption compared to conventional metal contacts. The oxide layer reduces recombination at the interface. The transparent metal maintains high fill factor and efficiency. The structure can be made by ALD deposition of the oxide layer followed by metal deposition.

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A method for optimizing solar cell passivation through selective carrier transport layer (CTTL) design. The method integrates a hydrogen-containing SiNx passivation layer with a dopant-containing CTTL, where the CTTL is selectively deposited on the passivation surface. The CTTL, comprising a dopant source, is activated by high-temperature annealing to achieve both doping and passivation. This integrated approach enables precise control over doping depth and uniformity, thereby improving solar cell performance characteristics such as fill factor, open-circuit voltage, and efficiency.

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A passivation contact solar cell for solar energy conversion that enables high-efficiency solar cells through advanced contact engineering. The cell features a passivation layer that significantly reduces carrier recombination at the interface between the front and rear electrodes, enabling higher efficiency solar cells. The passivation layer is achieved through a novel combination of surface passivation and contact enhancement techniques, enabling efficient carrier transport across the interface. This approach enables solar cells with efficiencies approaching 30% or higher, making it a promising alternative to traditional PERC-based solar cells.

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Solar cell and preparation method for enhancing photovoltaic efficiency through improved backside passivation. The method employs a silicon oxide tunneling layer with a thickness range of 0.8 nm to 1.5 nm, which enables carrier transport through the tunneling barrier while maintaining sufficient passivation. This approach addresses the limitations of conventional polysilicon backside passivation layers, particularly in achieving optimal passivation while preventing carrier recombination. The tunneling layer's optimal thickness is determined based on its bandgap width and carrier mobility, ensuring optimal carrier transport while maintaining passivation.

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Solar cell design and manufacturing method to improve conversion efficiency by reducing recombination at the contacts. The method involves sequentially growing three thin silicon layers on a passivation dielectric layer on the substrate. The outer layers contact each other and the middle layer has the metal contact electrode passing through both outer layers to contact the inner layer. This direct contact avoids damage to the outer layers during metal deposition that can cause recombination. The thin layers reduce shading and enable the direct contact.

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Passivation contact structure for solar cells that addresses parasitic absorption through a novel hydrogen-based passivation mechanism. The structure incorporates a hydrogen-rich silicon carbide (SiC) layer on the solar cell's backside, which replaces traditional tunnel oxide layers and doping materials. This hydrogen-rich passivation layer enhances optical absorption while maintaining electrical passivation properties, significantly reducing parasitic absorption in solar cells.

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Solar cell and module that enhance short-circuit current while maintaining high open circuit voltage through a novel tunnel oxide passivation contact structure. The structure features a thickened P-doped silicon layer region between the front and back electrodes, which enables improved lateral transport and reduces light absorption while maintaining high efficiency. The design allows for the conventional tunnel oxide passivation contact to be applied on both sides of the solar cell, while the thickened P-doped region on the back side provides enhanced current-carrying capability.

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Solar cells with passivated contacts that overcome the conventional issue of light absorption in the contact area. The cells employ a novel approach where a thin film and a back surface anti-reflection layer are integrated into the contact structure. The back surface anti-reflection layer forms a metal grid line that directly interfaces with the passivation layer, enabling efficient light trapping while maintaining high contact performance. This architecture addresses the parasitic light loss associated with conventional polysilicon contact structures while maintaining the benefits of passivated contacts.

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Solar cell with passivated contact and preparation method thereof to improve efficiency by reducing surface recombination. The cell has passivation contact structures on both sides using tunneling oxide layers. On the front side, a doped polysilicon layer is sandwiched between tunneling oxide and antireflection layers. On the back side, a doped polysilicon layer is sandwiched between tunneling oxide and antireflection layers. Metal grid lines contact the doped polysilicon layers instead of silicon substrate to avoid direct metal-silicon contacts. This reduces surface recombination and improves efficiency.

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Passivation contact structure for solar cells that combines transparent conductive film and tunneling layer to achieve both electrical conductivity and passivation effects. The structure features a transparent conductive film on the tunneling layer, with a cover layer on the transparent conductive film and a metal electrode passing through the cover layer to contact the transparent conductive film. The metal electrode's end surface remains within the transparent conductive film, enabling the formation of a passivation contact that reduces carrier recombination while minimizing light absorption loss. This innovative design enables high-performance solar cells with reduced recombination and light absorption.

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Solar cells with enhanced efficiency and reduced interface defects through a novel passivation system that replaces aluminum oxide with silicon nitride. The system employs a silicon nitride-based passivation layer with controlled composition ratios, where the first layer exhibits a negative charge while the second layer has a positive charge. This dual-layer architecture enables improved passivation properties compared to conventional aluminum oxide, particularly for N-type silicon solar cells. The system achieves enhanced passivation performance through controlled hydrogen ion injection during passivation, which creates a buffer layer with a specific refractive index and nitrogen concentration profile. The architecture also enables reduced interface state defect density and stress damage in the emitter region, leading to improved solar cell performance.

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Solar cell with enhanced edge passivation and improved open-circuit voltage and conversion efficiency. The solar cell incorporates a novel edge passivation structure that combines ultra-thin tunnel oxide layers with doped polysilicon layers, enabling reduced metal contact recombination currents and enhanced light absorption. The cell architecture also features interdigitated back contacts optimized for improved efficiency.

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Selective emitter passivation contact solar cell with improved efficiency through optimized backside polysilicon doping and thickness. The cell features a selective emitter passivation contact structure with ultra-thin silicon oxide and doped polysilicon (poly-Si) layers, where the backside polysilicon layer is engineered to minimize carrier absorption while maintaining optimal doping concentrations. This approach enables enhanced photo-generated carrier generation, particularly in the long-wave infrared region, thereby increasing the solar cell's short-circuit current while maintaining its open-circuit voltage and fill factor.

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A low-cost, high-efficiency solar cell with improved backside passivation and structural stability. The cell employs a novel backside ALD (Atomic Layer Deposition) passivation process that enhances light absorption and reduces internal reflection losses. The cell structure incorporates a unique interconnect system that enables reliable mounting of multiple solar panels on a rigid frame, while maintaining high efficiency and stability. The passivation layer and interconnect design work together to optimize the solar cell's performance characteristics.

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Bifacial solar cell with enhanced rear-side conversion efficiency through a novel passivation design. The cell features a rear busbar, aluminum finger, and passivation layer with a laser-etched grooved structure. The rear busbar and aluminum finger are connected to the P-type silicon via the grooved passivation layer, while the front busbar and silver contacts are positioned to direct light through the grooves. This design enables direct sunlight reflection from the rear side to the rear surface, significantly improving conversion efficiency at the rear side.

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A method for manufacturing solar cells with junction retraction from the cutting edge, enabling efficient and cost-effective production of solar cells with integrated rear contacts. The method involves creating a trench in the emitter region, followed by passivation of the trench and junction edges with silicon nitride. The trench is then cut through the passivation layer, allowing the solar cell to be formed with integrated rear contacts. The silicon nitride passivation layer prevents leakage current from the junctions, enabling improved efficiency and performance under low-light conditions.

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A method for manufacturing solar cells with enhanced antireflection properties and improved efficiency through a single-step process. The method employs a novel passivation film on both semiconductor surfaces, eliminating the need for separate diffusion layers and antireflection coatings. The passivation film is created through a single-step process involving a silicon nitride (SiNx) film deposited on both p-type and n-type semiconductor surfaces. This integrated approach achieves both antireflection and passivation functions while reducing manufacturing complexity and improving solar cell performance.

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Solar cell with enhanced back-side field region formation through selective laser-induced diffusion of impurities. The cell features a semiconductor substrate with impurities of one conductivity type, an emitter region with impurities of the opposite conductivity type, and a rear electric field region with impurities of the same conductivity type. The emitter region undergoes selective laser-induced diffusion of impurities from the passivation layer, while the rear electric field region undergoes laser-induced diffusion of impurities from the substrate. This selective diffusion creates a region with higher impurity concentrations in the rear electric field region compared to the emitter region, enabling the formation of a more effective back-side electric field.

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Solar cell with selective passivation contact structure and preparation method that enables efficient PERC solar cells. The cell features a selective passivation contact structure with improved contact resistance properties, achieved through a novel doping profile that balances metal and non-metal contact areas. This selective doping profile enables the creation of a uniform doping profile across the contact area, while maintaining the required doping concentrations for metal contacts. The selective passivation structure prevents recombination at the interface between the metal contacts and the semiconductor, thereby improving overall solar cell efficiency.

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Solar cell with enhanced passivation and local doping for improved efficiency and reliability. The cell employs a novel passivation structure combining a silicon nitride dielectric layer with a doped polysilicon film, which enables higher virtual open voltages and improved minority carrier lifetimes compared to conventional passivation approaches. The polysilicon film enables lateral conductivity while maintaining doping levels, while the silicon nitride layer enhances passivation. This architecture enables higher local doping concentrations, which in turn enhances the local back field battery's performance. The cell can be fabricated using existing solar cell fabrication processes, with the added benefit of lower material costs.

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Fully passivated contact crystalline silicon solar cell with enhanced efficiency through a novel silicon-based passivation layer. The cell features an ultra-thin silicon oxide passivation layer grown on the surface of the silicon wafer, which replaces the conventional intrinsic silicon passivation. This layer provides superior optical transparency and thermal stability while maintaining carrier transport properties, enabling higher conversion efficiency compared to conventional passivation structures. The passivation layer is fabricated through a compatible process with existing silicon production lines, enabling mass production of high-efficiency solar cells.

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Passivated solar cell with printed metal electrodes that significantly reduces metal contact recombination and resistance loss, improving open circuit voltage and conversion efficiency of crystalline silicon solar cells. The cell features a passivated solar cell architecture with printed metal electrodes that penetrate the silicon oxide film and silicon nitride film, while preventing metal contact recombination through optimized contact geometry. The printed metal electrodes are fabricated using a novel process that enables precise control over metal contact geometry and penetration depth, thereby minimizing recombination losses.

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Improving the efficiency of PERC solar cells through surface modification of the rear passivation layer. The method involves creating a passivation layer on the rear surface of the substrate through a localized PDA process, followed by the deposition of a capping layer. The passivation layer is specifically designed to reduce interface trap density and interface charge density, while the capping layer enhances passivation properties. This approach enables mass production of PERC solar cells with improved efficiency and reduced manufacturing complexity compared to traditional screen printing techniques.

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A method for producing passivated emitter and rear (PERT) solar cells through wet chemical edge isolation. The method involves creating a heavily doped silicon region on both sides of the solar cell, followed by a high-temperature treatment to etch the doped regions. The etched regions are then treated with a surface passivation or masking layer to prevent recombination at the edges. This approach enables the production of PERT solar cells with reduced edge isolation requirements compared to traditional laser isolation methods, while maintaining the benefits of wet chemical etching.

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A solar cell emitter for high-efficiency back contact heterojunction solar cells that improves device performance by replacing conventional amorphous silicon with a CrO-based emitter layer. The emitter comprises a CrO layer deposited on the back surface of a silicon substrate, followed by a second passivation layer. This CrO layer serves as the emitter electrode in the back contact heterojunction solar cell, enabling enhanced device efficiency compared to conventional doping-based emitter materials.

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Solar cell with enhanced light stability through a novel passivation technique. The cell features a silicon substrate doped with boron and a pn junction, with a thermal silicon oxide film applied to the P-type surface. This combination prevents dopant concentration gradients that can lead to reduced conversion efficiency in conventional solar cells. The oxide film also protects the junction from light-induced degradation, while maintaining the pn junction structure. The boron-doped substrate provides the necessary dopant concentration for efficient solar conversion, while the thermal oxide acts as a passivation layer.

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Solar cell with improved passivation layer formation on sidewalls of the contact structure. The solar cell features a novel contact design where the N-type contact penetrates through the emitter layer and passivation layer, while the P-type contact penetrates through the passivation layer. The N-type contact is specifically shaped as an inverted truncated cone with an angle α between 5° and 85°, which significantly reduces the difficulty of sidewall passivation compared to conventional cylindrical contacts. This design enables more efficient passivation of the sidewalls, particularly challenging areas, while maintaining the conventional contact configuration.

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Solar cell with enhanced passivation and reduced recombination through a novel polysilicon-tunnel oxide interlayer. The cell features a polysilicon layer and tunnel oxide layer between the polysilicon and silicon substrate, providing improved thermal stability and reduced recombination at elevated temperatures. The interlayer enables enhanced passivation of the silicon substrate while maintaining the tunnel oxide's thermal stability. This architecture enables higher power conversion efficiency in PERC solar cells compared to conventional PERC passivation layers.

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Solar cell with improved carrier collection efficiency through optimized emitter and back passivation architecture. The cell features a germanium substrate with a light-receiving surface and a non-light-receiving surface, a back passivation layer on the light-receiving surface, and a back aluminum metal layer with contacts corresponding to the back passivation layer's through holes. The back aluminum layer has a controlled radius of curvature and multiple contacts, ensuring efficient carrier collection while maintaining the original co-firing profile.

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Passivated contacts for solar cells that achieve low contact resistance while maintaining excellent carrier collection properties. The contacts employ a dielectric layer with a bandgap matching the semiconductor material's bandgap, followed by a wide bandgap semiconductor material. The dielectric layer provides high-quality passivation while the wide bandgap semiconductor material enables efficient carrier collection. The contacts can be achieved through various dielectric materials with different bandgaps, including TiOx, NiOx, and ZnO, and can be deposited using techniques like ALD. The contacts are designed to operate at optimal conditions for carrier collection while minimizing contact resistance.

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Solar cell element with enhanced passivation through a novel multi-layered structure. The element features a silicon substrate with a p-type semiconductor region, an aluminum oxide passivation layer, a silicon oxide passivation layer, and a second aluminum oxide passivation layer. The silicon oxide layer is applied in a controlled manner to the passivation layer, creating a multi-layered passivation structure that provides superior protection against water and oxygen permeation. The structure is then integrated with multiple conductors to form the solar cell.

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Solar cells with differentiated P-type and N-type emitter architectures that enable a simplified contact process for the emitter regions. The solar cells incorporate an amorphous silicon layer as a passivation and contact layer, eliminating the need for conventional contact processes between the emitter and substrate. The amorphous silicon layer provides hydrogen for passivation of the emitter region while serving as a conductive path for electrical contact. This architecture enables efficient solar cell fabrication with reduced processing complexity compared to conventional methods.

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A PERC solar cell with enhanced efficiency through a novel back electrode design. The cell features a silicon wafer with a PN junction, followed by a passivation layer with strategically positioned openings. The back electrode is connected to the metal layer, which partially covers the silicon wafer surface while covering the passivation layer. This configuration enables improved long-wave response while maintaining electrical contact between the metal and silicon. The back electrode's position relative to the opening area ensures optimal power conversion while minimizing the risk of electrical shorts.

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A solar cell manufacturing process that enables selective emitter technology through a novel passivation layer approach. The process involves depositing a plasma-enhanced passivation layer on the emitter surface, followed by grid line deposition and bias control. The passivation layer deactivates dopant activity in the surface region through chemical reactions with hydrogen species, while maintaining dopant concentration in the active region. This approach achieves high surface recombination rates while maintaining high sheet resistance and uniformity, enabling selective emitter solar cells with reduced grid lines.

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Passivated emitter back electrode twin solar cell with enhanced reliability and yield through a novel manufacturing process. The cell features a P-type germanium wafer with a light-receiving surface and back surface, where the back surface is divided into regions with different dielectric patterns. The wafer is first doped with a low concentration group V element, followed by a front dielectric layer and a back dielectric layer with distinct opening patterns. A high-temperature co-firing process creates the passivated emitter back electrode. The cell's backside features a single-side polished surface, while the front side maintains its original surface finish. This design ensures improved adhesion between the dielectric layers and subsequent module fabrication.

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Method for enhancing PERL solar cell efficiency through a novel passivation approach. The method involves creating a double-sided passivation structure on the PERL solar cell by depositing a layer on both the front and rear surfaces of the substrate. This double-layer passivation prevents recombination at the emitter surface while maintaining the rear bus bar electrode. The process involves atomic layer deposition of the passivation layer, followed by the formation of anti-reflection layers on both surfaces, and then creating the contact hole through the rear passivation layer. The aluminum paste fills the rear contact hole, while the conductive paste for the front electrode is applied. The heat treatment step creates the rear bus bar electrode. This double-layer passivation structure effectively improves the solar cell's photoelectric conversion efficiency by preventing recombination at the emitter surface while maintaining the rear bus bar electrode.

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Solar cell with improved carrier collection efficiency through enhanced back passivation and secondary absorption. The solar cell features a silicon substrate with a light-receiving surface and a non-light-receiving surface, a dielectric layer with openings, and a patterned metal layer comprising metal glue filled with the dielectric openings. The metal layer forms back electric fields between the substrate and the dielectric layer, while the dielectric layer enables secondary absorption of long-wavelength sunlight through its openings. This configuration enhances carrier collection efficiency by both collecting direct sunlight and reflecting long-wavelength light back to the solar cell.

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