Manufacturing Techniques for Quantum Dot Solar Cells

Quantum dot solar cells with enhanced light conversion efficiency through improved charge mobility and reduced photocharge trapping. The method involves heat-treating zinc oxide nanoparticles to fill oxygen vacancies, which are then replaced with oxygen to form a more stable and efficient charge carrier system. The heat-treated nanoparticles are then used to create an electron transfer layer on a transparent substrate, followed by a light absorption layer of lead sulfide quantum dots with EDT ligands. The anode layer is formed on top of the hole absorption layer, providing a gold electrode.

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Heterojunction PbS quantum dot solar cell with enhanced light absorption and charge collection through nanostructured PN junction layers. The cell features a stacked glass substrate with a nano-patterned PbS quantum dot layer, followed by a PN junction layer with ZnO nanoparticles as optical antennas. The ZnO nanoparticles serve as efficient light-harvesting materials while maintaining electronic inertness, enabling improved charge collection and filling factor. The nanostructured architecture enables efficient light absorption and carrier transport through the PbS quantum dot layer, while the PN junction layer enhances charge collection at the contact interface.

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Quantum dot solar cell with enhanced carrier collection efficiency and transmission rate through optimized hole transport layer (HTL) materials and structure design. The cell comprises a stacked conductive glass layer, electron transport layer, quantum dot absorption layer, hole transport layer, and metal electrode layer. The HTL is engineered to match the energy levels of the quantum dots, while the cell's architecture is optimized to maximize carrier collection and transmission. This approach enables improved photovoltaic conversion efficiency and reduced manufacturing costs compared to conventional quantum dot solar cells.

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Quantum dot laminated solar cell with high efficiency by utilizing a transparent conductive intermediate layer between the front and rear cells. The cell structure includes a front cell with a quantum dot layer, a transparent conductive middle layer, a rear cell with a quantum dot layer, and a counter electrode. The transparent middle layer improves light absorption and utilization compared to conventional stacked cells.

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Transparent solar cells that maximize the utilization of short-wavelength light in solar cells. The cells employ a quantum dot-based photovoltaic layer that absorbs and converts short-wavelength radiation, while simultaneously emitting longer wavelengths through excited state conversion. This dual-function layer enables efficient conversion of both visible and ultraviolet light, thereby increasing overall solar cell efficiency. The transparent cathode layer is optimized for maximum absorption of the absorbed short-wavelength light, while the encapsulation layer provides reflective protection for the excited quantum dot material.

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Inorganic semiconductor quantum dots with pyridine-based ligands that enhance photoelectric conversion efficiency in solar cells. The pyridine ligands are incorporated into the quantum dots' surface, enabling improved light absorption and electron transfer properties. The pyridine ligands form a stable, monomolecular conjugate with metal oxide particles, effectively adsorbing the quantum dots onto the surface. This conjugate-based adsorption mechanism enables efficient light absorption and charge collection, leading to enhanced solar cell performance.

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Quantum dot solar cells with enhanced photostability and efficiency through selective blocking of high-energy photons in the charge transport layer. The solar cells incorporate quantum dots with bandgaps in the 0.8-1.7 eV range, which selectively absorb and block high-energy photons while maintaining charge transport efficiency. This approach enables improved photostability compared to conventional organic solar cells, while maintaining high conversion efficiency. The solar cells employ a solution-based manufacturing process for the charge transport layer, enabling uniform film deposition and high-quality thin films.

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A solar cell that achieves high open-circuit voltage (VOC) and short-circuit current (JSC) through the integration of quantum dots with different bandgaps in a solution-processed semiconductor matrix. The matrix enables the formation of a composite film with optimized optical absorption properties, specifically tailored to the infrared spectrum. By engineering the density of states in the quantum dots, the matrix achieves improved quasi-Fermi level splitting and increased VOC, while maintaining charge transport properties. This approach enables the realization of solar cells with significantly higher VOC and JSC than conventional Si-based solar cells, approaching the theoretical limit of 6% power conversion efficiency.

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Solar cell with enhanced efficiency through selective hole transport through a quantum dot structure. The solar cell features a charge-selective emitter layer with a superlattice quantum dot structure that selectively passes electrons while allowing holes to pass through. This selective hole transport enables efficient separation of charge carriers, significantly reducing recombination losses and increasing overall solar cell efficiency.

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A lead sulfide quantum dot solar cell with enhanced photovoltaic performance achieved through a single-step ligand exchange process. The light-absorbing layer of the solar cell is prepared by replacing the conventional long-chain ligands with a second ligand through a one-step treatment, effectively removing the absorbing layer while maintaining the charge transport layer and reducing recombination. This approach eliminates the conventional ligand exchange steps, significantly reducing material consumption and processing complexity compared to traditional multi-step methods.

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Quantum dot solar cells that achieve enhanced carrier recombination inhibition through a novel nitride semiconductor modification layer. The layer, comprising a wide-bandgap material like ZnS, Al2O3, or HfO2, is deposited on the surface of quantum dots to create a barrier between the photogenerated carriers and the electrolyte interface. This modification layer enables precise control over the layer thickness, ensuring optimal carrier transport while minimizing recombination. The layer's thickness is precisely engineered between 1-10nm, with optimal performance achieved at 2-5nm. This approach enables the creation of quantum dot solar cells with significantly improved efficiency compared to conventional methods.

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Quantum dot solar cells that enhance photoelectric conversion efficiency through improved charge separation and collection in the absence of a conventional electron transport layer. The cells utilize a pn junction formed between the hole transport layer and the PbS quantum dots, with the hole transport layer serving as the charge separation region. The absence of an electron transport layer enables the efficient absorption of ultraviolet light while maintaining charge separation. The PbS-EDT and PbS-PbX2 materials are used as the electron and hole transport layers, respectively, with oleic acid ligands facilitating their efficient excitation and collection. The absence of an electron transport layer simplifies the preparation process and eliminates the need for conventional metal oxide layers.

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Quantum dot solar cell with enhanced charge extraction and external quantum efficiency through improved charge transfer between the photoactive layer and hole transport layer. The cell employs a benzodithiophene-based hole transport layer with a low HOMO energy level, enabling efficient charge transfer between the photoactive layer and transport layer. The benzodithiophene derivative is incorporated into a solution at a concentration of 5-50 mg/mL, allowing uniform formation of the transport layer. The solution is processed at temperatures between 0°C and 80°C to achieve a uniform film thickness. The cell achieves high photoelectric conversion efficiency (PCE) of 1.5-2.5% with an initial intensity of 100 mW·cm².

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Quantum dot solar cell with improved photoelectric conversion efficiency and a manufacturing method. The cell incorporates quantum dots with a doping of a first conductivity type, where the doping material is a conductivity type dopant such as Sn, and the quantum dots have an InP core and a GaP shell structure. The doping process involves the deposition of the dopant on the quantum dot layer followed by washing to remove excess dopant. This doping process enables the creation of quantum dots with specific conductivity characteristics that enhance the solar cell's photoelectric conversion efficiency.

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All-solid-state solar cells based on simultaneous deposition of quantum dots and a novel preparation method achieve high efficiency, low cost, and stability through a novel device architecture. The solar cells employ quantum dots as light-absorbing materials, which are deposited simultaneously with the photovoltaic layer through a novel deposition process. This approach eliminates the need for organic solvents and high-temperature processing, while maintaining the quantum dot's inherent properties. The device architecture enables efficient charge carrier collection and transport, resulting in improved photovoltaic performance compared to conventional quantum dot solar cells.

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A method for manufacturing a quantum dot solar cell using a doctor blade and a quantum dot solar cell manufactured therefrom, and more particularly, to a quantum dot ink having excellent dispersion of quantum dots and minimizing or preventing surface defects of the quantum dot layer. The method of manufacturing a quantum dot solar cell, which is easy to large-scale and mass production by using a quantum dot ink and a doctor blade, and more particularly, to a quantum dot solar cell manufactured therefrom, involves forming an electron transport layer on a transparent electrode, placing the transparent electrode on which the electron transport layer is formed on a substrate, the first comprising a C3-C6 alkylamine and a first polar solvent Treating an n-type quantum dot ink including a quantum dot capped with a solvent and a halogen ligand on the electron transport layer using a doctor blade and then heat-treating to form an n-type quantum dot layer, C3 to C6 on the n-type quantum dot layer A p-type quantum dot ink including a quantum dot capped with a C1 to C3 carboxylic acid having a thiol group and a second solvent comprising an alkylamine and a second polar solvent and treated with a doctor blade and then heat treated to form a p-type quantum

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Quantum dot-based solar cells with enhanced power conversion efficiency (PCE) and improved manufacturing process. The solar cells employ a novel organic hole transport layer on a transparent conductive electrode, followed by a quantum dot layer containing inorganic semiconductor quantum dots, and an electron transport layer comprising metal oxide quantum dots. The solar cells achieve PCEs of 1.5 times or more compared to conventional silicon-based solar cells, with the electron transport layer and quantum dot layer thicknesses optimized to achieve efficient charge separation.

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A method for enhancing the photovoltaic performance of quantum dot solar cells through improved adsorption of quantum dots onto the photoanode surface. The method employs a sandwich structure comprising a photoanode, electrolyte, and counter electrode, where a mixed solvent is used to facilitate the controlled deposition of quantum dots onto the photoanode surface. This approach enables the creation of quantum dots with higher surface areas and reduced defect densities, thereby enhancing the overall photovoltaic efficiency of the solar cell.

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Graphene quantum dot/black silicon heterojunction solar cell with enhanced light absorption and efficiency. The cell comprises a black silicon substrate with an anti-reflective coating, a graphene quantum dot layer deposited on the anti-reflective layer, and a graphene quantum dot layer forming a heterojunction with the black silicon. A metal back electrode is deposited on the black silicon substrate. The cell achieves superior light absorption characteristics through the graphene quantum dot layer, which exhibits a reflectivity of 1.8% at 1000nm, compared to conventional silicon-based solar cells.

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Quantum dot ink manufacturing method for solar cells that achieves high efficiency and uniformity through a simplified process. The method involves preparing a two-component solution containing quantum dots capped with a ligand and an inorganic compound, followed by a phase-transfer exchange reaction to replace the ligand with a shorter-molecular-weight ligand. The resulting quantum dots are dispersed in a solvent to produce a uniform quantum dot ink. This approach enables the production of high-quality quantum dots with reduced surface defects, improved charge mobility, and enhanced photoelectric conversion efficiency, while maintaining the simplicity of the process compared to conventional ligand exchange methods.

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A method for manufacturing quantum dot solar cells that enables stable operation at room temperature. The method involves forming a quantum dot layer using a solution substitution process, where the quantum dot solution is replaced with a corresponding solution to create a quantum dot ink. This ink is then sprayed onto a substrate to form a quantum dot layer. The quantum dot layer is then post-treated with ligands to form a photoactive layer. The solution substitution process allows for the formation of quantum dot solar cells with improved stability and performance compared to conventional methods.

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Graphene-silicon quantum dot hybrid solar cells with enhanced efficiency and stability through precise control of graphene doping levels. The hybrid structure combines a silicon quantum dot layer with a doped graphene layer, encapsulated in a metal nanowire layer, and features a thermal annealing process to optimize interface properties. The doping level of the graphene layer is carefully controlled to balance electrical conductivity and optical transparency, while the metal nanowire layer enhances charge carrier collection. The annealing treatment at elevated temperatures (450-550°C) ensures optimal interface formation and stability.

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Quantum dot sensitized solar cells achieve enhanced photoelectric conversion efficiency through a novel surface modification technique. The method involves depositing a wide band gap semiconductor layer on the surface of quantum dots using atomic layer deposition (ALD), which effectively suppresses recombination of photogenerated electrons and electrolytes. This surface modification layer is fabricated through a precise control of precursor deposition conditions, enabling precise control of the semiconductor layer thickness and composition. The resulting quantum dot sensitized solar cells exhibit improved stability and efficiency compared to conventional methods.

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Quantum dot photovoltaic devices with enhanced performance through optimized material preparation. The method involves vapor-depositing a cadmium oleate precursor on the hole transport layer, followed by deposition of a quantum dot material. The cadmium oleate precursor is prepared through refluxing a mixture of cadmium oleate and trioctylphosphine at elevated temperatures under nitrogen atmosphere. This precursor is then used to form the quantum dot material, which is then deposited on the hole transport layer. The cadmium oleate precursor enables the formation of high-quality quantum dots with controlled size and composition, while the vapor deposition process provides precise control over the quantum dot distribution and thickness.

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Quantum dot solar cells with improved stability and performance through novel device architectures. The invention involves preparing electron transport layers on the cathode substrate using organic conjugated polymer solutions, which enables the formation of stable hole transport layers. These transport layers are achieved through spin-coating and annealing processes that optimize polymer molecular weight and thickness. The resulting transport layers provide enhanced electron mobility and stability, enabling the creation of high-efficiency quantum dot solar cells with improved performance characteristics.

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Quantum dot solar cells prepared through a novel light-absorbing coating process that enables efficient deposition of high-quality quantum dots on photoanodes without compromising photovoltaic performance. The coating process involves depositing quantum dots onto photoanodes through a controlled chemical bath deposition method, followed by assembly of the solar cell components into a sandwich structure. This approach addresses the limitations of traditional methods by enabling direct deposition of quantum dots on photoanodes while maintaining high quantum dot quality and uniform distribution.

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Solar cells with enhanced spectral response through the use of ZnSe/ZnS colloidal quantum dots. The solar cells incorporate ZnSe/ZnS colloidal quantum dots with negatively charged sulfhydryl groups and positively charged amino groups, which form a core-shell structure. These colloidal quantum dots are prepared through surface electrostatic interaction and are deposited in a layer-by-layer fashion onto a Si-based solar cell surface. The ZnSe/ZnS colloidal quantum dots enable efficient transfer of ultraviolet photons to the solar cell, thereby improving its spectral response beyond the conventional Si-based solar cells.

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Solar cell with improved photoelectric conversion efficiency through the use of a multilayer quantum well/1 type quantum dot structure in the active region. The cell features a lower electrode, a lower contact layer, a back field layer, an active region layer, a window layer, and an upper contact layer arranged from bottom to top. The active region layer comprises a multilayer type II quantum well/1 type quantum dot laminated structure, where the type I quantum dot layer is positioned on top of the type II quantum well layer. This configuration enables the efficient separation of electron and hole wave functions, which is critical for achieving high conversion efficiency in solar cells.

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A method for preparing a uniform and compact quantum dot active layer for high-efficiency solar cells through a single-step ligand exchange process. The method involves preparing a stable CQD solution at a specific concentration, followed by a ligand exchange reaction that selectively replaces the original ligands with halogen atoms. This process enables the formation of a uniform quantum dot film with enhanced electronic transition and transport properties, while minimizing grain boundaries and achieving carrier diffusion length enhancement.

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Quantum dot solar cells with enhanced efficiency through a novel interface modification. The solar cells incorporate a self-assembled monolayer (SAM) layer at the interface between the quantum dot layer and a metal oxide layer, which contains a benzene ring with pi-pi interaction. This SAM layer protects the quantum dots from ligand exchange damage during the deposition process, leading to improved photovoltaic performance. The solar cells achieve a power conversion efficiency of 10.7% and demonstrate enhanced current density, voltage, and charging efficiency compared to conventional quantum dot solar cells.

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Optimizing quantum dot solar cell performance through precise control of quantum dot surface chemistry and material properties. The method employs a novel ligand exchange process that precisely binds ligands to quantum dots, enabling targeted modulation of their surface chemistry and bandgap energy. This approach enables the creation of quantum dot solar cells with improved short-circuit current density, open-circuit voltage, figure of merit, and power conversion efficiency by precisely controlling the quantum dot surface chemistry and bandgap energy.

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Intermediate band quantum dot solar cell with enhanced efficiency through a novel damping layer design. The cell incorporates a damping layer between the quantum dot array and the p-type semiconductor layer, which prevents space charge expansion and maintains the intermediate band's half-filled state. This configuration enables the formation of a flat Fermi level in the intermediate band, significantly improving the conversion efficiency of the intermediate energy band in the solar cell.

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Multi-junction solar cell based on semiconductor quantum dots and a manufacturing method thereof. The multi-junction solar cell incorporates semiconductor quantum dots as intermediate layers between the quantum dots and the epitaxial layers, enabling efficient absorption of photons across a broader spectral range. The quantum dots absorb photons in the 1.0-1.3 eV and 0.6-0.9 eV range, while the epitaxial layers provide the necessary bandgap for the desired multi-junction structure. The manufacturing process involves growing the quantum dots on a substrate, followed by the epitaxial layers and the intermediate quantum dot layers.

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Quantum dot solar cell with enhanced carrier collection efficiency through optimized quantum dot arrangement. The cell features a quantum dot layer sandwiched between p-type and n-type semiconductor layers, with the quantum dots arranged to fill the space between the p-type and n-type base portions. This configuration enables carriers generated in the quantum dots to be more effectively collected and converted into electrical charge.

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Environmental-friendly quantum dot solar cell that achieves high efficiency through a novel CuInS2/ZnS core-shell quantum dot structure. The solar cell employs CuInS2/ZnS core-shell quantum dots as the active layer, with the ZnS shell providing enhanced stability and durability. The ZnS shell wraps around the CuInS2 core, forming a stable and efficient material system that maintains the solar cell's performance characteristics while eliminating the need for heavy metals. The manufacturing process involves a simple and environmentally friendly method of preparing the ZnS shell-coated CuInS2/ZnS quantum dots. This approach enables the production of high-efficiency solar cells with reduced environmental impact.

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Solar cell device that enhances photovoltaic efficiency through strain engineering of Ge quantum dots in a Si-based heterostructure. The device comprises a Si substrate with a SiO2 interlayer, followed by a Si thin film with a Ge quantum dot layer containing Ge quantum dots with diameters between 2-7nm, and then a SiO2 interlayer covering the Ge quantum dot layer. The SiO2 interlayer is further followed by a doped Si substrate with a transparent conductive film. The device achieves improved photovoltaic performance through controlled strain engineering of Ge quantum dots in the Si-based heterostructure, enabling direct conversion of solar spectrum to electrical energy.

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A solar cell with enhanced efficiency through a novel heterojunction structure combining carbon quantum dots (CQDs) with silicon nanowires. The cell features a N-type silicon substrate with a metal back electrode layer, followed by a thin layer of N-type silicon nanowires on the surface. Above this nanowire layer, a P-type carbon quantum dot thin film is deposited, followed by a metal electrode layer. The carbon quantum dot layer serves as a photoactive material, while the metal electrode layer enables efficient electron transport. The nanowire structure enhances carrier collection and light absorption, while the carbon quantum dot layer provides a high-efficiency photocatalyst. This architecture enables high-efficiency solar cells with improved light absorption and electron collection compared to conventional solar cells.

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Hybrid quantum dot organic solar cells (HyQDOSC) that achieve higher power conversion efficiency (PCE) than conventional solar cells by leveraging thin-film quantum dot layers. The novel approach involves integrating PbS quantum dots into organic photovoltaic layers, where their photoluminescent properties enable efficient absorption in the near-infrared spectrum. The photovoltaic layer itself is comprised of a conjugated polymer (PTB7) and a bulk heterojunction (BHJ) material. A thin-film PbS quantum dot layer with a thickness comparable to the photovoltaic layer thickness is used as a photosensitizer, enabling enhanced photocurrent generation through localized exciton absorption. The solar cell achieves PCEs above 10% by combining the benefits of both quantum dot and organic photovoltaic materials.

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A method for fabricating high-efficiency solar cells using semiconductor quantum dots doped with phosphorus at very high concentrations. The method involves forming quantum dots through a process that selectively removes In from a p-type semiconductor substrate while preserving P, and then forms the quantum dots in a matrix of semiconductor nitride or oxide. The quantum dots are then selectively grown in a hydrogen atmosphere to form P-doped quantum dots, which are then combined with transparent electrodes to form the solar cell.

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Quantum dot sensitized solar cells with enhanced stability and conversion efficiency through controlled deposition of quantum dot thin films. The cells feature a porous substrate with a passivation layer followed by a quantum dot layer prepared using an ultrasonic spray method. This controlled deposition enables precise control over quantum dot thickness and distribution, while maintaining the stability of the battery and conversion process. The ultrasonic spray method allows for uniform quantum dot deposition with minimal surface defects, leading to improved photovoltaic performance.

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Quantum dot composite for solar cells that achieves high efficiency through a novel approach. The composite comprises semiconductor particles with quantum dots in a matrix containing a semiconductor material, where the quantum dots are precipitated from a metal compound solution through biomineralization. This composite is integrated into a solar cell structure, where the matrix particles surround the quantum dots to form a uniform film. The composite's unique structure enables high quantum efficiency through the formation of a uniform quantum dot distribution across the matrix.

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Quantum dot solar cell manufacturing apparatus for printing solar cells through a novel printing process. The apparatus employs a printing system that selectively deposits quantum dots onto a substrate, while simultaneously modifying and cleaning the substrate surface. This integrated process enables the printing of solar cells with improved yield and productivity compared to traditional coating methods. The printing system uses a combination of solution coating and printing techniques to deposit quantum dots, followed by surface modification and cleaning steps to enhance the solar cell's performance.

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Quantum dots for solar cells that enhance light absorption beyond conventional semiconductor structures. The quantum dots are composed of single-crystal polyhedral structures with a polyhedral shape surrounded by planes, with particle sizes between 1-10 nm. These quantum dots are deposited on the solar cell surface, where they absorb light across a broad spectrum due to their unique structural properties. The quantum dots enable higher light absorption efficiency compared to conventional semiconductor structures, thereby achieving theoretical limits of solar cell efficiency.

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Method for manufacturing quantum dot solar cells that enables mass production by optimizing the production process for quantum dot solar cells. The method involves forming a transparent electrode layer on the substrate, followed by a controlled deposition of quantum dots on the electron transport layer. The quantum dots are then modified to enhance their performance through surface treatment, and the modified quantum dot layer is coated with an electron blocking layer. The process is further optimized through the use of specific printing techniques and annealing conditions to achieve optimal quantum dot performance.

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Manufacturing a quantum dot solar cell with improved efficiency through a novel approach to integrating quantum dots with conductive polymer layers. The method involves forming a conductive polymer layer on electrodes with different polarities, followed by the deposition of quantum dots on the polymer layer. This creates a hybrid structure where the polymer layer acts as a carrier for the quantum dots, enhancing their absorption and collection properties. The polymer layer can be made from various materials, including P3HT, PCDTBT, and PCTDTBT, and can be formed through various coating techniques, including spin coating, dip coating, and spray coating. The polymer layer serves as a carrier for the quantum dots, while the quantum dots themselves are dispersed in the polymer matrix. This approach enables the creation of solar cells with enhanced light absorption and collection efficiency, potentially leading to higher conversion efficiencies compared to conventional quantum dot solar cells.

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Manufacturing method for quantum dot solar cells that enables efficient tandem structure formation through a novel approach. The method involves depositing quantum dots on electrodes of different polarities while simultaneously forming a conductive organic layer that enables uniform quantum dot deposition. The organic layer is fabricated through various coating techniques, including drop casting, spin coating, and dip coating, and is applied at controlled temperatures. The deposition of quantum dots onto the organic layer enables precise control over the quantum dot structure and distribution, while maintaining the organic layer's conductivity. This approach enables the formation of quantum dot solar cells with enhanced efficiency through the creation of a conductive organic layer that supports the quantum dots.

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Nanocrystalline quantum dot film for enhancing crystalline silicon solar cell efficiency through a novel quantum dot dispersion layer. The film comprises CdS nanocrystalline quantum dots dispersed in a silicon-based matrix, where the quantum dots enable unique optical and electrical properties. The dispersion layer is fabricated through a conventional silicon-based process, with the quantum dots being incorporated into the silicon matrix. This approach enables the creation of a photovoltaic material with improved conversion efficiency through the enhanced absorption and collection of light energy by the quantum dots.

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A solar battery that utilizes strain-engineered quantum dots to enhance light absorption and conversion efficiency. The solar cell incorporates strain-modulated quantum dots within a silicon substrate, where the strain engineering enables precise control over the forbidden band width. This enables optimal matching between the quantum dot's energy levels and the solar spectrum, resulting in improved conversion efficiency compared to conventional quantum dot solar cells. The strain engineering process involves creating strain-induced lattice distortions in the silicon substrate, which are then used to create the quantum dots. The resulting solar cells achieve higher efficiency through enhanced light absorption and collection.

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