Manufacturing Techniques for Quantum Dot Solar Cells

Quantum dot solar cells with enhanced light conversion efficiency through improved charge mobility and reduced photocharge trapping. The method involves heat-treating zinc oxide nanoparticles to fill oxygen vacancies, which are then replaced with oxygen to form a more stable and efficient charge carrier system. The heat-treated nanoparticles are then used to create an electron transfer layer on a transparent substrate, followed by a light absorption layer of lead sulfide quantum dots with EDT ligands. The anode layer is formed on top of the hole absorption layer, providing a gold electrode.

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Heterojunction PbS quantum dot solar cell with enhanced light absorption and charge collection through nanostructured PN junction layers. The cell features a stacked glass substrate with a nano-patterned PbS quantum dot layer, followed by a PN junction layer with ZnO nanoparticles as optical antennas. The ZnO nanoparticles serve as efficient light-harvesting materials while maintaining electronic inertness, enabling improved charge collection and filling factor. The nanostructured architecture enables efficient light absorption and carrier transport through the PbS quantum dot layer, while the PN junction layer enhances charge collection at the contact interface.

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Quantum dot solar cell with enhanced carrier collection efficiency and transmission rate through optimized hole transport layer (HTL) materials and structure design. The cell comprises a stacked conductive glass layer, electron transport layer, quantum dot absorption layer, hole transport layer, and metal electrode layer. The HTL is engineered to match the energy levels of the quantum dots, while the cell's architecture is optimized to maximize carrier collection and transmission. This approach enables improved photovoltaic conversion efficiency and reduced manufacturing costs compared to conventional quantum dot solar cells.

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Quantum dot laminated solar cell with high efficiency by utilizing a transparent conductive intermediate layer between the front and rear cells. The cell structure includes a front cell with a quantum dot layer, a transparent conductive middle layer, a rear cell with a quantum dot layer, and a counter electrode. The transparent middle layer improves light absorption and utilization compared to conventional stacked cells.

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Transparent solar cells that maximize the utilization of short-wavelength light in solar cells. The cells employ a quantum dot-based photovoltaic layer that absorbs and converts short-wavelength radiation, while simultaneously emitting longer wavelengths through excited state conversion. This dual-function layer enables efficient conversion of both visible and ultraviolet light, thereby increasing overall solar cell efficiency. The transparent cathode layer is optimized for maximum absorption of the absorbed short-wavelength light, while the encapsulation layer provides reflective protection for the excited quantum dot material.

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Inorganic semiconductor quantum dots with pyridine-based ligands that enhance photoelectric conversion efficiency in solar cells. The pyridine ligands are incorporated into the quantum dots' surface, enabling improved light absorption and electron transfer properties. The pyridine ligands form a stable, monomolecular conjugate with metal oxide particles, effectively adsorbing the quantum dots onto the surface. This conjugate-based adsorption mechanism enables efficient light absorption and charge collection, leading to enhanced solar cell performance.

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Quantum dot solar cells with enhanced photostability and efficiency through selective blocking of high-energy photons in the charge transport layer. The solar cells incorporate quantum dots with bandgaps in the 0.8-1.7 eV range, which selectively absorb and block high-energy photons while maintaining charge transport efficiency. This approach enables improved photostability compared to conventional organic solar cells, while maintaining high conversion efficiency. The solar cells employ a solution-based manufacturing process for the charge transport layer, enabling uniform film deposition and high-quality thin films.

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A solar cell that achieves high open-circuit voltage (VOC) and short-circuit current (JSC) through the integration of quantum dots with different bandgaps in a solution-processed semiconductor matrix. The matrix enables the formation of a composite film with optimized optical absorption properties, specifically tailored to the infrared spectrum. By engineering the density of states in the quantum dots, the matrix achieves improved quasi-Fermi level splitting and increased VOC, while maintaining charge transport properties. This approach enables the realization of solar cells with significantly higher VOC and JSC than conventional Si-based solar cells, approaching the theoretical limit of 6% power conversion efficiency.

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Solar cell with enhanced efficiency through selective hole transport through a quantum dot structure. The solar cell features a charge-selective emitter layer with a superlattice quantum dot structure that selectively passes electrons while allowing holes to pass through. This selective hole transport enables efficient separation of charge carriers, significantly reducing recombination losses and increasing overall solar cell efficiency.

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A lead sulfide quantum dot solar cell with enhanced photovoltaic performance achieved through a single-step ligand exchange process. The light-absorbing layer of the solar cell is prepared by replacing the conventional long-chain ligands with a second ligand through a one-step treatment, effectively removing the absorbing layer while maintaining the charge transport layer and reducing recombination. This approach eliminates the conventional ligand exchange steps, significantly reducing material consumption and processing complexity compared to traditional multi-step methods.

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Quantum dot solar cells that achieve enhanced carrier recombination inhibition through a novel nitride semiconductor modification layer. The layer, comprising a wide-bandgap material like ZnS, Al2O3, or HfO2, is deposited on the surface of quantum dots to create a barrier between the photogenerated carriers and the electrolyte interface. This modification layer enables precise control over the layer thickness, ensuring optimal carrier transport while minimizing recombination. The layer's thickness is precisely engineered between 1-10nm, with optimal performance achieved at 2-5nm. This approach enables the creation of quantum dot solar cells with significantly improved efficiency compared to conventional methods.

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Quantum dot solar cells that enhance photoelectric conversion efficiency through improved charge separation and collection in the absence of a conventional electron transport layer. The cells utilize a pn junction formed between the hole transport layer and the PbS quantum dots, with the hole transport layer serving as the charge separation region. The absence of an electron transport layer enables the efficient absorption of ultraviolet light while maintaining charge separation. The PbS-EDT and PbS-PbX2 materials are used as the electron and hole transport layers, respectively, with oleic acid ligands facilitating their efficient excitation and collection. The absence of an electron transport layer simplifies the preparation process and eliminates the need for conventional metal oxide layers.

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Quantum dot solar cell with enhanced charge extraction and external quantum efficiency through improved charge transfer between the photoactive layer and hole transport layer. The cell employs a benzodithiophene-based hole transport layer with a low HOMO energy level, enabling efficient charge transfer between the photoactive layer and transport layer. The benzodithiophene derivative is incorporated into a solution at a concentration of 5-50 mg/mL, allowing uniform formation of the transport layer. The solution is processed at temperatures between 0°C and 80°C to achieve a uniform film thickness. The cell achieves high photoelectric conversion efficiency (PCE) of 1.5-2.5% with an initial intensity of 100 mW·cm².

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Quantum dot solar cell with improved photoelectric conversion efficiency and a manufacturing method. The cell incorporates quantum dots with a doping of a first conductivity type, where the doping material is a conductivity type dopant such as Sn, and the quantum dots have an InP core and a GaP shell structure. The doping process involves the deposition of the dopant on the quantum dot layer followed by washing to remove excess dopant. This doping process enables the creation of quantum dots with specific conductivity characteristics that enhance the solar cell's photoelectric conversion efficiency.

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All-solid-state solar cells based on simultaneous deposition of quantum dots and a novel preparation method achieve high efficiency, low cost, and stability through a novel device architecture. The solar cells employ quantum dots as light-absorbing materials, which are deposited simultaneously with the photovoltaic layer through a novel deposition process. This approach eliminates the need for organic solvents and high-temperature processing, while maintaining the quantum dot's inherent properties. The device architecture enables efficient charge carrier collection and transport, resulting in improved photovoltaic performance compared to conventional quantum dot solar cells.

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A method for manufacturing a quantum dot solar cell using a doctor blade and a quantum dot solar cell manufactured therefrom, and more particularly, to a quantum dot ink having excellent dispersion of quantum dots and minimizing or preventing surface defects of the quantum dot layer. The method of manufacturing a quantum dot solar cell, which is easy to large-scale and mass production by using a quantum dot ink and a doctor blade, and more particularly, to a quantum dot solar cell manufactured therefrom, involves forming an electron transport layer on a transparent electrode, placing the transparent electrode on which the electron transport layer is formed on a substrate, the first comprising a C3-C6 alkylamine and a first polar solvent Treating an n-type quantum dot ink including a quantum dot capped with a solvent and a halogen ligand on the electron transport layer using a doctor blade and then heat-treating to form an n-type quantum dot layer, C3 to C6 on the n-type quantum dot layer A p-type quantum dot ink including a quantum dot capped with a C1 to C3 carboxylic acid having a thiol group and a second solvent comprising an alkylamine and a second polar solvent and treated with a doctor blade and then heat treated to form a p-type quantum

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Quantum dot-based solar cells with enhanced power conversion efficiency (PCE) and improved manufacturing process. The solar cells employ a novel organic hole transport layer on a transparent conductive electrode, followed by a quantum dot layer containing inorganic semiconductor quantum dots, and an electron transport layer comprising metal oxide quantum dots. The solar cells achieve PCEs of 1.5 times or more compared to conventional silicon-based solar cells, with the electron transport layer and quantum dot layer thicknesses optimized to achieve efficient charge separation.

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A method for enhancing the photovoltaic performance of quantum dot solar cells through improved adsorption of quantum dots onto the photoanode surface. The method employs a sandwich structure comprising a photoanode, electrolyte, and counter electrode, where a mixed solvent is used to facilitate the controlled deposition of quantum dots onto the photoanode surface. This approach enables the creation of quantum dots with higher surface areas and reduced defect densities, thereby enhancing the overall photovoltaic efficiency of the solar cell.

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Graphene quantum dot/black silicon heterojunction solar cell with enhanced light absorption and efficiency. The cell comprises a black silicon substrate with an anti-reflective coating, a graphene quantum dot layer deposited on the anti-reflective layer, and a graphene quantum dot layer forming a heterojunction with the black silicon. A metal back electrode is deposited on the black silicon substrate. The cell achieves superior light absorption characteristics through the graphene quantum dot layer, which exhibits a reflectivity of 1.8% at 1000nm, compared to conventional silicon-based solar cells.

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Quantum dot ink manufacturing method for solar cells that achieves high efficiency and uniformity through a simplified process. The method involves preparing a two-component solution containing quantum dots capped with a ligand and an inorganic compound, followed by a phase-transfer exchange reaction to replace the ligand with a shorter-molecular-weight ligand. The resulting quantum dots are dispersed in a solvent to produce a uniform quantum dot ink. This approach enables the production of high-quality quantum dots with reduced surface defects, improved charge mobility, and enhanced photoelectric conversion efficiency, while maintaining the simplicity of the process compared to conventional ligand exchange methods.

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