Enhanced Charge Collection at Electrodes in Quantum Dot Solar Cells

Heterojunction PbS quantum dot solar cell with enhanced light absorption and charge collection through nanostructured PN junction layers. The cell features a stacked glass substrate with a nano-patterned PbS quantum dot layer, followed by a PN junction layer with ZnO nanoparticles as optical antennas. The ZnO nanoparticles serve as efficient light-harvesting materials while maintaining electronic inertness, enabling improved charge collection and filling factor. The nanostructured architecture enables efficient light absorption and carrier transport through the PbS quantum dot layer, while the PN junction layer enhances charge collection at the contact interface.

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Photoelectric conversion element with enhanced quantum dot performance through a novel organic compound layer. The element comprises a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode disposed in this order. The photoelectric conversion layer includes quantum dots and a first organic compound, where the organic compound is specifically designed to suppress carrier flow into the quantum dots while maintaining hole mobility. The organic compound layer is formed through controlled deposition of a material with low hole mobility, enabling efficient electron transport between the quantum dots and the second interfacial layer. This architecture addresses the common issue of carrier accumulation in quantum dots, resulting in improved dark current reduction and enhanced photoelectric conversion efficiency.

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Photoelectric conversion element with improved sensitivity and dynamic range through quantum dot-based light detection. The element comprises a photoelectric conversion layer comprising three or more quantum dot layers, each with surface-modifying ligands that modify the quantum dot surfaces. The quantum dot layers are arranged with specific bandgap energy relationships, where the energy of the quantum dot closer to the first electrode is smaller than the energy of the quantum dot closer to the second electrode. This arrangement enables the conversion of visible light into electrical signals across a broad spectral range, with the quantum dot energy matching the desired detection wavelength.

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Multi-intermediate band quantum dot solar cell with improved efficiency by using multiple quantum dot layers with different bandgaps to absorb a broader range of low-energy photons. The cell has a stack of quantum dot layers on an N-type semiconductor, each layer having a different bandgap. This allows absorption of sub-bandgap photons that cannot be absorbed by a single intermediate band. The layers are sandwiched between N-type and P-type semiconductors to form a solar cell.

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Dual-gradient regulated quantum dot photovoltaic detector for multi-spectral infrared detection. The detector comprises a substrate with a first electrode, a quantum dot layer formed on the side of the first electrode away from the substrate, and a second electrode formed on the side of the quantum dot layer away from the first electrode. The quantum dot layer includes layers of different quantum dot materials with increasing bandgap and doping levels, forming a PIN homojunction with bandgap and doping gradients. This dual-gradient regulation enables improved carrier transport and collection across the detector's spectral range, enabling ultra-wide spectral detection capabilities.

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Lead sulfide quantum dot solar cell structure and its preparation method that enhances photoelectric conversion efficiency through a novel zinc oxide photoactive layer with optically wrinkled structure. The zinc oxide layer incorporates micro-protrusions that create a gully-like depression pattern between adjacent protrusions, effectively increasing light absorption while maintaining structural integrity. This unique optical structure enables improved light absorption and electron transport properties, leading to enhanced solar cell performance.

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Optoelectric device and electronic device that enhance photoelectric conversion efficiency through quantum dot-based active layers. The device comprises a quantum dot layer with different bandgap characteristics, arranged between electrodes in a specific pattern. The quantum dot layer is doped with different dopants, creating a layered structure with distinct energy bands. This layered structure enables selective absorption of light across different wavelengths, while the quantum dot layer's bandgap characteristics determine the energy range of absorbed photons. The device achieves improved photoelectric conversion efficiency by optimizing the energy range of absorbed photons through the controlled bandgap engineering of the quantum dot layer.

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High-efficiency solar cell structure with embedded quantum dots in layers and electrode design to improve light absorption, carrier generation, transport, and collection. The solar cell has a layered photovoltaic layer with quantum dots embedded in each layer. The quantum dot concentration increases from top to bottom to ensure similar light absorption. The electrodes have side contacts and insulating blocks to isolate adjacent contacts. This allows wider electrodes for better collection. The side contacts and insulation prevent short circuiting between adjacent electrodes.

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Quantum dot device for enhanced light emission through improved charge carrier transport and extraction. The device comprises a light-emitting layer of quantum dots, a charge auxiliary layer, and a buffer layer. The buffer layer is positioned between the light-emitting layer and the charge auxiliary layer, with its conductivity characteristics optimized for charge carrier extraction. The charge auxiliary layer is positioned between the charge carrier transport layer and the light-emitting layer, with its charge transport properties optimized for charge carrier collection. The buffer layer's enhanced conductivity compared to the charge auxiliary layer enables efficient charge carrier extraction from the light-emitting layer.

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Solar cells with quantum-structured materials and/or layers of quantum-structured materials incorporated therein achieve high open circuit voltages through novel device architectures. The cells incorporate a wide band gap material in both the emitter and depletion region adjacent to the emitter, with a wider energy gap extended emitter structure featuring material in both the emitter and depletion region. This design enables improved carrier collection while minimizing dark current, particularly in optically-thin solar cells.

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Solar cell with enhanced efficiency through selective hole transport through a quantum dot structure. The solar cell features a charge-selective emitter layer with a superlattice quantum dot structure that selectively passes electrons while allowing holes to pass through. This selective hole transport enables efficient separation of charge carriers, significantly reducing recombination losses and increasing overall solar cell efficiency.

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A method for enhancing the efficiency of solar cells by using a layer-by-layer self-assembly ZnSe/ZnS core-shell structure with quantum dots. The method involves depositing ZnSe/ZnS quantum dots with negative surface charge and ZnSe/ZnS quantum dots with positive surface charge through a spin-coating process at low speeds. These core-shell structures are then assembled through layer-by-layer self-assembly to form a fluorescence down transfer layer. The core-shell structure enables efficient transfer of energy from ultraviolet photons to the solar cell's p-n junction, thereby improving spectral response and overall efficiency.

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Quantum dot solar cell with enhanced charge extraction and external quantum efficiency through improved charge transfer between the photoactive layer and hole transport layer. The cell employs a benzodithiophene-based hole transport layer with a low HOMO energy level, enabling efficient charge transfer between the photoactive layer and transport layer. The benzodithiophene derivative is incorporated into a solution at a concentration of 5-50 mg/mL, allowing uniform formation of the transport layer. The solution is processed at temperatures between 0°C and 80°C to achieve a uniform film thickness. The cell achieves high photoelectric conversion efficiency (PCE) of 1.5-2.5% with an initial intensity of 100 mW·cm².

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All-solid-state solar cells based on simultaneous deposition of quantum dots and a novel preparation method achieve high efficiency, low cost, and stability through a novel device architecture. The solar cells employ quantum dots as light-absorbing materials, which are deposited simultaneously with the photovoltaic layer through a novel deposition process. This approach eliminates the need for organic solvents and high-temperature processing, while maintaining the quantum dot's inherent properties. The device architecture enables efficient charge carrier collection and transport, resulting in improved photovoltaic performance compared to conventional quantum dot solar cells.

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A hole-collecting electrode for high-efficiency inorganic perovskite quantum dot solar cells that addresses the common issue of hole transport layer stability and efficiency. The electrode employs a novel hole-collecting material that combines the benefits of perovskite quantum dots with a stable, organic hole transport layer. This material enables efficient hole collection while maintaining the stability of the organic transport layer, thereby achieving higher solar cell efficiency compared to conventional organic hole transport layers.

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Photoelectric conversion devices using quantum dot layers to enhance light responsivity. The devices feature a substrate with a semiconductor base layer and multiple alternating layers of semiconductor material and quantum dots. The semiconductor material layers are followed by quantum dot layers, which contain semiconductor nanoparticles. The quantum dot layers are formed through a process that controls the size of the nanoparticles, enabling precise control over the quantum confinement effects. The semiconductor material layers serve as the base for the quantum dot layers, while the quantum dot layers provide the active photovoltaic material. The device architecture enables high responsivity through the combined effects of semiconductor material properties and quantum confinement effects.

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Quantum dot ink manufacturing method for solar cells that achieves high efficiency and uniformity through a simplified process. The method involves preparing a two-component solution containing quantum dots capped with a ligand and an inorganic compound, followed by a phase-transfer exchange reaction to replace the ligand with a shorter-molecular-weight ligand. The resulting quantum dots are dispersed in a solvent to produce a uniform quantum dot ink. This approach enables the production of high-quality quantum dots with reduced surface defects, improved charge mobility, and enhanced photoelectric conversion efficiency, while maintaining the simplicity of the process compared to conventional ligand exchange methods.

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Graphene-silicon quantum dot hybrid solar cells with enhanced efficiency and stability through precise control of graphene doping levels. The hybrid structure combines a silicon quantum dot layer with a doped graphene layer, encapsulated in a metal nanowire layer, and features a thermal annealing process to optimize interface properties. The doping level of the graphene layer is carefully controlled to balance electrical conductivity and optical transparency, while the metal nanowire layer enhances charge carrier collection. The annealing treatment at elevated temperatures (450-550°C) ensures optimal interface formation and stability.

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Semiconductor photoconverters using quantum dots in GaInAs-based heterostructures achieve higher efficiency than traditional cascading structures by leveraging stress-relieved quantum dot absorption. The technology employs InGaAs quantum dots grown on GaAs surfaces with 20-50% indium concentration, providing enhanced absorption beyond the GaInAs bandgap while maintaining current matching with GaInAs-based photovoltaic cells. This approach enables improved spectral sensitivity matching across the GaInAs bandgap, resulting in higher photocurrent densities compared to conventional cascading structures.

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Solar cell with improved photoelectric conversion efficiency through the use of a multilayer quantum well/1 type quantum dot structure in the active region. The cell features a lower electrode, a lower contact layer, a back field layer, an active region layer, a window layer, and an upper contact layer arranged from bottom to top. The active region layer comprises a multilayer type II quantum well/1 type quantum dot laminated structure, where the type I quantum dot layer is positioned on top of the type II quantum well layer. This configuration enables the efficient separation of electron and hole wave functions, which is critical for achieving high conversion efficiency in solar cells.

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A solar cell with enhanced quantum dot-based conversion using a wide-gap semiconductor material. The cell employs a multi-layered InP quantum dot structure in an InGaP base semiconductor, where each InP layer contains a specific InP quantum dot population. The structure is fabricated through repeated InGaP and InP layer stacking, with each InGaP layer serving as a base semiconductor. The InP quantum dots, with their large energy gap, enable efficient two-step light absorption through charge separation, while the InGaP layers provide the base semiconductor functionality. This multi-layered InP quantum dot structure enables the formation of a wide-bandgap solar cell with enhanced quantum dot-based conversion efficiency.

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Passivation of semiconductor nanoparticles using a solution-based approach to achieve high efficiency solar cells. The method involves treating semiconductor quantum dots with a solution containing a cationic reagent that selectively binds to surface anions, followed by treatment with a cation-containing reagent. This process forms a passivated core with cations, which enables the formation of high-efficiency solar cells through the absorption of visible and infrared light. The solution-based approach eliminates the need for organic ligands, enabling nanocrystal-to-nanocrystal passivation and improved carrier mobility.

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Quantum dot solar cells with enhanced efficiency through a novel interface modification. The solar cells incorporate a self-assembled monolayer (SAM) layer at the interface between the quantum dot layer and a metal oxide layer, which contains a benzene ring with pi-pi interaction. This SAM layer protects the quantum dots from ligand exchange damage during the deposition process, leading to improved photovoltaic performance. The solar cells achieve a power conversion efficiency of 10.7% and demonstrate enhanced current density, voltage, and charging efficiency compared to conventional quantum dot solar cells.

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Multi-stage porous Ti02/quantum dot/dye thin film solar cell photocathode for enhanced visible light absorption. The photocathode comprises a transparent conductive substrate, a bottom layer of multi-stage pore Ti2 film, an intermediate layer of I-III-VI quantum dots, a secondary layer of semiconductor oxide barrier layer, and an uppermost layer of dye layer. The bottom layer provides a conductive substrate, the intermediate layer enhances visible light absorption through quantum dots, the secondary layer prevents charge recombination, and the uppermost layer facilitates dye adsorption and charge transfer.

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Solar cell with enhanced photoelectric conversion efficiency through a novel quantum dot-sensitized structure. The solar cell comprises a conductive substrate, a photoanode, a quantum dot sensitizer, an electrolyte, a counter electrode, and a transparent conductive glass. The quantum dot layer is a CdS, CdSe, or CdTe quantum dot layer, with a CuxSe shell layer. The shell layer is a CuxSe or CuxTe layer. The sensitization layer is formed by depositing a photoanode on the substrate using a continuous ion layer adsorption and reaction method, followed by the deposition of a quantum dot layer on the photoanode. The sensitization layer is then encapsulated with the electrolyte and completed with the counter electrode.

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Solar cell with enhanced light conversion efficiency through the integration of quantum dots in a metal oxide composite layer. The solar cell comprises a transparent electrode, a metal oxide composite layer with mixed metal oxide particles and metal particles, and a counter electrode. The composite layer contains quantum dots that selectively absorb and convert light across the visible spectrum, while the metal oxide particles enhance charge transport and stability. The counter electrode is positioned between the quantum dot layer and the metal oxide composite layer, with additional metal oxide components for improved charge balance and stability.

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Photoelectric conversion layer with enhanced quantum dot-based sensitization that improves solar cell efficiency. The layer comprises a semiconductor substrate, a first electrode, a semiconductor layer with quantum dots, a hole transport layer, and a second electrode. The semiconductor layer contains quantum dots that function as a semiconductor material with quantum effects, and the hole transport layer is formed by polymerizing a conductive polymer precursor. The layer is formed by contacting the semiconductor substrate with a conductive polymer precursor solution, where the quantum dots are excited by light and act as a polymerization initiator. This approach enables efficient sensitization of the semiconductor layer while maintaining high conductivity and stability.

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A solar cell with enhanced photoelectric conversion efficiency through the use of semiconductor quantum dots. The cell features a light-transmitting substrate, a first electrode film made of tin oxide, zinc oxide, and indium tin oxide, and a layer of semiconductor quantum dots deposited on the opposite side of the first electrode film. A metal film with lower hardness than the quantum dots is applied on the photoelectric conversion layer side of the first electrode film. This configuration enables carriers generated in the photoelectric conversion layer to pass through the interface with the current collector film, significantly improving the device's conversion efficiency beyond the theoretical limit.

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Solar cell with improved efficiency through enhanced surface passivation of ZnO nanorods. The cell incorporates a hole block layer between the ZnO nanorods and a p-type quantum dot layer between the nanorods and electrodes. The quantum dot layer is made of PbS, PbSe, or CuInS2, which are semiconductor materials that can be used to enhance the solar cell's light absorption and charge carrier collection. The hole block layer and quantum dot layer work together to improve the solar cell's open circuit voltage and short circuit current.

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Quantum dot solar cell with enhanced carrier collection efficiency through optimized carrier transport pathways. The cell incorporates a quantum dot integrated portion with a specially designed carrier collection architecture that enables efficient collection of carriers from the quantum dot layer to the substrate interface. The collection architecture comprises multiple carrier collection sections with different orientations, ensuring optimal carrier transport through the semiconductor layers. This design enables improved carrier collection and increased photoelectric conversion efficiency compared to conventional designs.

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Quantum dot solar cell with enhanced carrier collection properties through optimized quantum dot arrangement. The cell features alternating quantum dot layers with different bandgaps, where each layer contains columnar carrier collection units extending in the thickness direction. These collection units are positioned at regular intervals in the layers, creating a uniform carrier distribution across the solar cell surface. By arranging the collection units in a specific pattern, the distance between them varies, enabling more efficient carrier collection while minimizing local carrier depletion. The arrangement also enables uniform carrier collection across the solar cell surface, resulting in improved photoelectric conversion efficiency.

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Solar cell device that enhances photovoltaic efficiency through strain engineering of Ge quantum dots in a Si-based heterostructure. The device comprises a Si substrate with a SiO2 interlayer, followed by a Si thin film with a Ge quantum dot layer containing Ge quantum dots with diameters between 2-7nm, and then a SiO2 interlayer covering the Ge quantum dot layer. The SiO2 interlayer is further followed by a doped Si substrate with a transparent conductive film. The device achieves improved photovoltaic performance through controlled strain engineering of Ge quantum dots in the Si-based heterostructure, enabling direct conversion of solar spectrum to electrical energy.

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A solar cell with enhanced efficiency through a novel heterojunction structure combining carbon quantum dots (CQDs) with silicon nanowires. The cell features a N-type silicon substrate with a metal back electrode layer, followed by a thin layer of N-type silicon nanowires on the surface. Above this nanowire layer, a P-type carbon quantum dot thin film is deposited, followed by a metal electrode layer. The carbon quantum dot layer serves as a photoactive material, while the metal electrode layer enables efficient electron transport. The nanowire structure enhances carrier collection and light absorption, while the carbon quantum dot layer provides a high-efficiency photocatalyst. This architecture enables high-efficiency solar cells with improved light absorption and electron collection compared to conventional solar cells.

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Hybrid quantum dot organic solar cells (HyQDOSC) that achieve higher power conversion efficiency (PCE) than conventional solar cells by leveraging thin-film quantum dot layers. The novel approach involves integrating PbS quantum dots into organic photovoltaic layers, where their photoluminescent properties enable efficient absorption in the near-infrared spectrum. The photovoltaic layer itself is comprised of a conjugated polymer (PTB7) and a bulk heterojunction (BHJ) material. A thin-film PbS quantum dot layer with a thickness comparable to the photovoltaic layer thickness is used as a photosensitizer, enabling enhanced photocurrent generation through localized exciton absorption. The solar cell achieves PCEs above 10% by combining the benefits of both quantum dot and organic photovoltaic materials.

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Solar cell with enhanced carrier extraction efficiency through a novel quantum dot layer design. The solar cell features a quantum dot layer sandwiched between p-type and n-type semiconductor regions, with the quantum dot layer's band structure engineered to create a coherent mini-band across the entire layer. This is achieved by gradually increasing the quantum dot size as it transitions from the central portion to the semiconductor interfaces, effectively creating a resonant tunneling effect between adjacent quantum levels. The design enables efficient carrier extraction from the quantum dot layer to the p-type and n-type semiconductor regions, overcoming conventional limitations in carrier collection.

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Enhancing the efficiency of photovoltaic cells through the use of quantum dots in their optical absorber layers. The quantum dots, which can be made from various semiconductor materials such as PbS, GaSb, InSb, InAs, and CIS, are engineered to cover a broad spectrum of solar energy, including infrared, visible, and ultraviolet light. By incorporating these quantum dots into the optical absorber layer, the photovoltaic cells can achieve higher conversion efficiencies compared to conventional solar cells. The quantum dots enable the separation of charge carriers as soon as they are generated, significantly reducing charge recombination and increasing overall efficiency.

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Solar cells with enhanced photoelectric conversion efficiency through the application of quantum dots. The solar cells incorporate quantum dots in a three-layer configuration with a barrier layer surrounding the quantum dots. The barrier layer has a specific resistance lower than the quantum dots in the central portion, enabling carrier collection. The barrier layer's thickness can be controlled to optimize carrier collection efficiency. The solar cells achieve improved conversion efficiency by maximizing carrier collection through the barrier layer while maintaining high quantum confinement. The barrier layer's transparency is achieved through the use of a transparent conductive film, such as AZO, with a bandgap of 3.5 eV or less.

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A solar battery that utilizes strain-engineered quantum dots to enhance light absorption and conversion efficiency. The solar cell incorporates strain-modulated quantum dots within a silicon substrate, where the strain engineering enables precise control over the forbidden band width. This enables optimal matching between the quantum dot's energy levels and the solar spectrum, resulting in improved conversion efficiency compared to conventional quantum dot solar cells. The strain engineering process involves creating strain-induced lattice distortions in the silicon substrate, which are then used to create the quantum dots. The resulting solar cells achieve higher efficiency through enhanced light absorption and collection.

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