Enhanced Charge Collection at Electrodes in Quantum Dot Solar Cells

Heterojunction PbS quantum dot solar cell with enhanced light absorption and charge collection through nanostructured PN junction layers. The cell features a stacked glass substrate with a nano-patterned PbS quantum dot layer, followed by a PN junction layer with ZnO nanoparticles as optical antennas. The ZnO nanoparticles serve as efficient light-harvesting materials while maintaining electronic inertness, enabling improved charge collection and filling factor. The nanostructured architecture enables efficient light absorption and carrier transport through the PbS quantum dot layer, while the PN junction layer enhances charge collection at the contact interface.

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Photoelectric conversion element with enhanced quantum dot performance through a novel organic compound layer. The element comprises a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode disposed in this order. The photoelectric conversion layer includes quantum dots and a first organic compound, where the organic compound is specifically designed to suppress carrier flow into the quantum dots while maintaining hole mobility. The organic compound layer is formed through controlled deposition of a material with low hole mobility, enabling efficient electron transport between the quantum dots and the second interfacial layer. This architecture addresses the common issue of carrier accumulation in quantum dots, resulting in improved dark current reduction and enhanced photoelectric conversion efficiency.

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Photoelectric conversion element with improved sensitivity and dynamic range through quantum dot-based light detection. The element comprises a photoelectric conversion layer comprising three or more quantum dot layers, each with surface-modifying ligands that modify the quantum dot surfaces. The quantum dot layers are arranged with specific bandgap energy relationships, where the energy of the quantum dot closer to the first electrode is smaller than the energy of the quantum dot closer to the second electrode. This arrangement enables the conversion of visible light into electrical signals across a broad spectral range, with the quantum dot energy matching the desired detection wavelength.

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Multi-intermediate band quantum dot solar cell with improved efficiency by using multiple quantum dot layers with different bandgaps to absorb a broader range of low-energy photons. The cell has a stack of quantum dot layers on an N-type semiconductor, each layer having a different bandgap. This allows absorption of sub-bandgap photons that cannot be absorbed by a single intermediate band. The layers are sandwiched between N-type and P-type semiconductors to form a solar cell.

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Dual-gradient regulated quantum dot photovoltaic detector for multi-spectral infrared detection. The detector comprises a substrate with a first electrode, a quantum dot layer formed on the side of the first electrode away from the substrate, and a second electrode formed on the side of the quantum dot layer away from the first electrode. The quantum dot layer includes layers of different quantum dot materials with increasing bandgap and doping levels, forming a PIN homojunction with bandgap and doping gradients. This dual-gradient regulation enables improved carrier transport and collection across the detector's spectral range, enabling ultra-wide spectral detection capabilities.

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Lead sulfide quantum dot solar cell structure and its preparation method that enhances photoelectric conversion efficiency through a novel zinc oxide photoactive layer with optically wrinkled structure. The zinc oxide layer incorporates micro-protrusions that create a gully-like depression pattern between adjacent protrusions, effectively increasing light absorption while maintaining structural integrity. This unique optical structure enables improved light absorption and electron transport properties, leading to enhanced solar cell performance.

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Optoelectric device and electronic device that enhance photoelectric conversion efficiency through quantum dot-based active layers. The device comprises a quantum dot layer with different bandgap characteristics, arranged between electrodes in a specific pattern. The quantum dot layer is doped with different dopants, creating a layered structure with distinct energy bands. This layered structure enables selective absorption of light across different wavelengths, while the quantum dot layer's bandgap characteristics determine the energy range of absorbed photons. The device achieves improved photoelectric conversion efficiency by optimizing the energy range of absorbed photons through the controlled bandgap engineering of the quantum dot layer.

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High-efficiency solar cell structure with embedded quantum dots in layers and electrode design to improve light absorption, carrier generation, transport, and collection. The solar cell has a layered photovoltaic layer with quantum dots embedded in each layer. The quantum dot concentration increases from top to bottom to ensure similar light absorption. The electrodes have side contacts and insulating blocks to isolate adjacent contacts. This allows wider electrodes for better collection. The side contacts and insulation prevent short circuiting between adjacent electrodes.

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Quantum dot device for enhanced light emission through improved charge carrier transport and extraction. The device comprises a light-emitting layer of quantum dots, a charge auxiliary layer, and a buffer layer. The buffer layer is positioned between the light-emitting layer and the charge auxiliary layer, with its conductivity characteristics optimized for charge carrier extraction. The charge auxiliary layer is positioned between the charge carrier transport layer and the light-emitting layer, with its charge transport properties optimized for charge carrier collection. The buffer layer's enhanced conductivity compared to the charge auxiliary layer enables efficient charge carrier extraction from the light-emitting layer.

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Solar cells with quantum-structured materials and/or layers of quantum-structured materials incorporated therein achieve high open circuit voltages through novel device architectures. The cells incorporate a wide band gap material in both the emitter and depletion region adjacent to the emitter, with a wider energy gap extended emitter structure featuring material in both the emitter and depletion region. This design enables improved carrier collection while minimizing dark current, particularly in optically-thin solar cells.

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Solar cell with enhanced efficiency through selective hole transport through a quantum dot structure. The solar cell features a charge-selective emitter layer with a superlattice quantum dot structure that selectively passes electrons while allowing holes to pass through. This selective hole transport enables efficient separation of charge carriers, significantly reducing recombination losses and increasing overall solar cell efficiency.

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A method for enhancing the efficiency of solar cells by using a layer-by-layer self-assembly ZnSe/ZnS core-shell structure with quantum dots. The method involves depositing ZnSe/ZnS quantum dots with negative surface charge and ZnSe/ZnS quantum dots with positive surface charge through a spin-coating process at low speeds. These core-shell structures are then assembled through layer-by-layer self-assembly to form a fluorescence down transfer layer. The core-shell structure enables efficient transfer of energy from ultraviolet photons to the solar cell's p-n junction, thereby improving spectral response and overall efficiency.

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Quantum dot solar cell with enhanced charge extraction and external quantum efficiency through improved charge transfer between the photoactive layer and hole transport layer. The cell employs a benzodithiophene-based hole transport layer with a low HOMO energy level, enabling efficient charge transfer between the photoactive layer and transport layer. The benzodithiophene derivative is incorporated into a solution at a concentration of 5-50 mg/mL, allowing uniform formation of the transport layer. The solution is processed at temperatures between 0°C and 80°C to achieve a uniform film thickness. The cell achieves high photoelectric conversion efficiency (PCE) of 1.5-2.5% with an initial intensity of 100 mW·cm².

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All-solid-state solar cells based on simultaneous deposition of quantum dots and a novel preparation method achieve high efficiency, low cost, and stability through a novel device architecture. The solar cells employ quantum dots as light-absorbing materials, which are deposited simultaneously with the photovoltaic layer through a novel deposition process. This approach eliminates the need for organic solvents and high-temperature processing, while maintaining the quantum dot's inherent properties. The device architecture enables efficient charge carrier collection and transport, resulting in improved photovoltaic performance compared to conventional quantum dot solar cells.

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A hole-collecting electrode for high-efficiency inorganic perovskite quantum dot solar cells that addresses the common issue of hole transport layer stability and efficiency. The electrode employs a novel hole-collecting material that combines the benefits of perovskite quantum dots with a stable, organic hole transport layer. This material enables efficient hole collection while maintaining the stability of the organic transport layer, thereby achieving higher solar cell efficiency compared to conventional organic hole transport layers.

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Photoelectric conversion devices using quantum dot layers to enhance light responsivity. The devices feature a substrate with a semiconductor base layer and multiple alternating layers of semiconductor material and quantum dots. The semiconductor material layers are followed by quantum dot layers, which contain semiconductor nanoparticles. The quantum dot layers are formed through a process that controls the size of the nanoparticles, enabling precise control over the quantum confinement effects. The semiconductor material layers serve as the base for the quantum dot layers, while the quantum dot layers provide the active photovoltaic material. The device architecture enables high responsivity through the combined effects of semiconductor material properties and quantum confinement effects.

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Quantum dot ink manufacturing method for solar cells that achieves high efficiency and uniformity through a simplified process. The method involves preparing a two-component solution containing quantum dots capped with a ligand and an inorganic compound, followed by a phase-transfer exchange reaction to replace the ligand with a shorter-molecular-weight ligand. The resulting quantum dots are dispersed in a solvent to produce a uniform quantum dot ink. This approach enables the production of high-quality quantum dots with reduced surface defects, improved charge mobility, and enhanced photoelectric conversion efficiency, while maintaining the simplicity of the process compared to conventional ligand exchange methods.

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Graphene-silicon quantum dot hybrid solar cells with enhanced efficiency and stability through precise control of graphene doping levels. The hybrid structure combines a silicon quantum dot layer with a doped graphene layer, encapsulated in a metal nanowire layer, and features a thermal annealing process to optimize interface properties. The doping level of the graphene layer is carefully controlled to balance electrical conductivity and optical transparency, while the metal nanowire layer enhances charge carrier collection. The annealing treatment at elevated temperatures (450-550°C) ensures optimal interface formation and stability.

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Semiconductor photoconverters using quantum dots in GaInAs-based heterostructures achieve higher efficiency than traditional cascading structures by leveraging stress-relieved quantum dot absorption. The technology employs InGaAs quantum dots grown on GaAs surfaces with 20-50% indium concentration, providing enhanced absorption beyond the GaInAs bandgap while maintaining current matching with GaInAs-based photovoltaic cells. This approach enables improved spectral sensitivity matching across the GaInAs bandgap, resulting in higher photocurrent densities compared to conventional cascading structures.

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Solar cell with improved photoelectric conversion efficiency through the use of a multilayer quantum well/1 type quantum dot structure in the active region. The cell features a lower electrode, a lower contact layer, a back field layer, an active region layer, a window layer, and an upper contact layer arranged from bottom to top. The active region layer comprises a multilayer type II quantum well/1 type quantum dot laminated structure, where the type I quantum dot layer is positioned on top of the type II quantum well layer. This configuration enables the efficient separation of electron and hole wave functions, which is critical for achieving high conversion efficiency in solar cells.

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