Chemical Passivation for Reduced Recombination Loss in Solar Cells

A perovskite solar cell with improved electron transfer efficiency and stability, comprising a perovskite layer, a composite passivation layer formed by cross-linking a polydopamine-modified layered double metal hydroxide, and a bimetallic composite oxide layer prepared by calcining a layered double metal hydroxide. The composite passivation layer is formed by coating a composite material solution onto the perovskite layer and annealing, while the bimetallic composite oxide layer is prepared by calcining a layered double metal hydroxide at 250°C for 2 hours.

Source

A solar cell with improved efficiency and stability, comprising a perovskite light absorption layer and a pair of transport layers, with an interface passivation material distributed in one or more of the transport layers. The passivation material contains functional groups with active hydrogen that interact with electronegative groups in adjacent layers, forming hydrogen bonds and improving carrier transport. The material can also be used as a separate passivation layer between the transport layers and perovskite layer.

Source

A hybrid heterojunction solar cell with improved surface passivation and reduced light absorption in non-metallic areas. The cell features a tunneling layer formed by thermal oxidation and a polysilicon layer grown using LPCVD or PECVD. The tunneling layer is selectively grown in areas where the polysilicon layer is not present, creating a patterned structure that enhances surface passivation and reduces light absorption. The cell is prepared by sequentially depositing the tunneling layer, polysilicon layer, and other components on a semiconductor substrate.

Source

Solar cell design to improve efficiency by reducing front surface recombination. The solar cell has front surface field regions spaced apart from each other. Each front surface field region corresponds to a P-type or N-type conductive region on the back surface. Front and back passivation layers are used. This allows Coulomb field passivation by the front surface fields to drive carriers away from the front surface, while the back passivation prevents recombination. The front surface passivation is less affected by the front fields.

Source

A modified tunnel oxide layer for passivated contact (TOPCon) solar cells that improves device performance compared to conventional tunnel oxide layers. The modified oxide has a higher Si4+ content and is treated with plasma to enhance the bonding and stability of the oxide surface. This results in better passivation and lower contact resistance compared to conventional tunnel oxides. The modified oxide preparation involves growing a thin SiOx layer, followed by surface treatment with a plasma containing both hydrogen and oxygen. This modifies the oxide composition and structure to improve passivation and device performance when used in TOPCon solar cells.

Source

A solar cell with reduced recombination losses at side edges, comprising a substrate, a doped conductive layer, a first passivation film layer, and a first dielectric layer. The first passivation film layer completely covers the side surfaces of the substrate, and a second passivation film layer is stacked on the surface of a passivated contact layer facing away from the substrate. The second passivation film layer is made of a material including at least one of SiNx, SiONx, and SiOx.

Source

Solar cell with improved passivation and electrical performance, manufacturing method, and photovoltaic module and system. The solar cell has a tunnel oxide layer between the substrate and the contact layer. The tunnel oxide layer contains carbon and hydrogen dopants in addition to silicon and oxygen. This improves surface passivation and reduces defects compared to thin tunnel oxides. The carbon doping prevents pore formation during oxide growth. The hydrogen doping passivates the surface. The carbon and hydrogen co-doping enables thicker tunnel oxides for better performance.

Source

Solar cell with improved efficiency comprising a semiconductor substrate, a hole transport layer and an electron transport layer disposed on the substrate with an interval, and a dual-passivation layer structure comprising a first passivation layer on the hole transport layer and a second passivation layer covering both the first passivation layer and the electron transport layer. The first passivation layer is made of aluminum oxide and the second passivation layer is made of silicon oxide or silicon nitride.

Source

A solar cell with reduced recombination losses at side edges, comprising a substrate, a doped conductive layer, a first passivation film layer, and a first dielectric layer. The first passivation film layer completely covers the side surfaces of the substrate, and a second passivation film layer is stacked on the side of the passivated contact layer facing away from the substrate. The second passivation film layer is made of a material including at least one of SiNx, SiONx, and SiOx.

Source

A method for forming a passivation layer on a substrate using a combination of atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The method involves depositing a first precursor layer using ALD, followed by the introduction of a spacing gas to separate the ALD and PECVD deposition zones. A second precursor layer is then deposited using PECVD in the separated zone, resulting in a passivation layer with improved uniformity and atomic packing density compared to conventional PECVD-only deposition methods.

Source

Bifacial solar cell with improved passivation, ablation resistance, and conversion efficiency. The cell comprises a silicon wafer with a P-type first doped layer, a silicon oxide doped layer, an intrinsic silicon layer, and an N-type second doped layer. The intrinsic silicon layer is formed by repeating deposition and plasma bombardment processes to achieve a thickness of at least 5 nm. The cell exhibits enhanced field passivation performance, reduced metal recombination loss, and improved ablation resistance.

Source

The latest development in perovskite solar cell (PSC) technology has been significantly influenced by advanced techniques aimed at passivating surface defects. This work presents a new approach called thermal imprinting-assisted ion exchange passivation (TIAIEP), which delivers a different approach to conventional solution-based methods. TIAIEP focuses on addressing surface imperfections in solid-state films by using a passivator that promotes ion exchange specifically at the defect sites within the perovskite layer. By adjusting the time and temperature of the TIAIEP process, we achieve substantial enhancement in the creation of a compositional gradient within the films. This optimization slows the cooling rate of hot carriers, leading to minimizing charge recombination and improving the device performance. Remarkably, devices treated with TIAIEP achieve a 22.29% power conversion efficiency and show outstanding stability, with unencapsulated PSCs maintaining 91% of their original efficiency after over 2000 h of storage and 90% efficiency after 1200 h of constant illumination. These ... Read More

Source

A method for preparing a heterojunction solar cell with improved cell-to-module (CTM) efficiency, comprising depositing a first passivation layer with a controlled oxygen content and thickness, and a back surface field layer, on a silicon substrate, followed by deposition of a second passivation layer and an emission electrode layer. The first passivation layer is formed by gradually increasing the proportion of carbon dioxide in the gas source during deposition, while maintaining a controlled temperature and thickness. The resulting solar cell exhibits enhanced CTM efficiency and improved output power.

Source

Double-sided tunneling silicon-oxide passivated back-contact solar cell with improved efficiency and manufacturability. The cell features a silicon wafer with a first semiconductor layer and passivation layer on both sides, comprising tunneling silicon-oxide layers and doped polycrystalline silicon layers. The layers are deposited simultaneously using wet processes or a tube furnace, eliminating the need for expensive flat-panel PECVD equipment. The cell's design balances passivation, conductivity, and contact resistance through optimized layer thicknesses and phosphorus-doped diffusion regions.

Source

A photovoltaic cell with improved anti-PID performance and power generation efficiency, comprising a substrate, a front-side passivation layer and anti-reflection layer, and a rear-side passivation layer, polarization phenomenon weakening layer, and silicon nitride layer. The rear-side passivation layer includes an aluminum oxide layer with a refractive index of 1.4-1.6 and thickness of 4-20 nm, the polarization phenomenon weakening layer includes a silicon oxynitride layer with a refractive index of 1.5-1.8 and thickness of 1-30 nm, and the silicon nitride layer has a refractive index of 1.9-2.5 and thickness of 50-100 nm.

Source

Edge recombination is considered hard to avoid entirely in silicon (Si) solar cells as well as Si-base solar devices, hindering their future commercialization. However, such an important issue in perovskite/silicon (PK/Si) tandem solar cells has not attracted much attention. Herein, a low-temperature, non-vacuum liquid-based edge passivation strategy (LEPS) to improve the power conversion efficiency (PCE) of PK/Si tandem solar cells is proposed. The minority carrier lifetime (eff) of the PK/Si tandem sample with 495.8 s significantly enhances to 739.7 s after passivating the Si sub-cell edge recombination. The open circuit voltage (VOC) of the PK/Si tandem solar cell increases by up to +3.8%abs from the initial state after LEPS treatment due to edge passivation, leading to the PCE of the PK/Si tandem solar cell increases by up to +1.2%abs. Finally, a monolithic PK/Si tandem cell with a PCE of 29.48% was achieved by further utilizing the LEPS, which opened up a simple and effective avenue for enhancing the PCE of PK/Si tandem solar cells and further promoting a higher photovoltaic ... Read More

Source

A solar cell with improved passivation effect on the front surface, comprising a silicon substrate with P-type and N-type regions on the back surface, front surface field regions on the front surface, and front and back passivation layers. The front surface field regions are selectively formed over the P-type and N-type regions, rather than covering the entire front surface, to minimize interference with the passivation layers and enhance carrier collection efficiency.

Source

Passivated perovskite structures for solar cells that utilize a dynamic hindered urea bond-based Lewis acid-base material to heal defects and improve device stability. The material absorbs moisture to release Lewis bases that coordinate with unpaired cationic defects, preventing detrimental molecule penetration and enhancing long-term device performance. The passivated perovskite structures achieve a power conversion efficiency of up to 22.3% and maintain over 85% efficiency after 3500 hours of storage under ambient conditions.

Source

Modified tunnel oxide layer for p-type top-contact (TOPCon) solar cells to improve performance. The modified tunnel oxide layer is a thin silicon oxide film with a high concentration of silicon ions (Si4+) compared to oxygen ions (O2-). This modified oxide layer is prepared by a two-step process. First, a damage-free silicon oxide layer is grown. Second, the oxide layer is plasma treated to introduce the high Si4+ concentration. This modified tunnel oxide layer has better passivation properties compared to conventional tunnel oxide layers prepared by oxidation methods. The improved passivation helps reduce recombination losses in the TOPCon cell.

Source

Passivation treatment is an effective method to suppress various defects in perovskite solar cells (PSCs), such as cation vacancies, under-coordinated Pb

Source