Tunnel Oxide Passivated Contact (TOPCON) for Solar Cells

A hybrid heterojunction solar cell with improved surface passivation and reduced light absorption in non-metallic areas. The cell features a tunneling layer formed by thermal oxidation and a polysilicon layer grown using LPCVD or PECVD. The tunneling layer is selectively grown in areas where the polysilicon layer is not present, creating a patterned structure that enhances surface passivation and reduces light absorption. The cell is prepared by sequentially depositing the tunneling layer, polysilicon layer, and other components on a semiconductor substrate.

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Method for preparing a solar cell with improved efficiency by forming tunneling passivation structures on both the front and back surfaces. The method involves oxidizing a portion of the back surface passivation layer to create a mask, then etching through the mask to form the back surface tunneling passivation structure. This prevents damage to the textured surface during etching. The front surface tunneling passivation structure is formed separately. This ensures consistency in texturing between the contact and non-contact regions.

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A tunnel oxide passivated contact (TOPCon) solar cell with improved efficiency, comprising a tunnel oxide layer and a doped polysilicon layer, wherein the doped polysilicon layer is replaced with a transparent conductive oxide (TCO) layer, and a first passivation layer is formed on the TCO layer. The TCO layer is preferably a doped metal oxide, such as aluminum-doped zinc oxide, and the first passivation layer is preferably aluminum oxide or silicon nitride. The solar cell exhibits improved fill factor and efficiency compared to conventional TOPCon cells.

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Transparent conductive contact passivation heterojunction solar cell with improved efficiency and passivation, comprising a p-type amorphous silicon layer, an intrinsic amorphous silicon layer, an n-type amorphous silicon layer, and a transparent conductive oxide layer, wherein the transparent conductive oxide layer is formed by a low-temperature process and has a high carrier mobility.

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Transparent conductive contact passivation heterojunction solar cell design to improve efficiency and reduce costs of heterojunction solar cells. The cell has a unique structure with a tunneling layer, first transparent conductive film, and anti-reflection layer on the light-facing side of the silicon substrate. This reduces recombination and improves fill factor compared to conventional heterojunction cells. The cell can also have an intrinsic amorphous silicon layer, doped amorphous silicon layer, and second transparent conductive film on the backside.

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A modified tunnel oxide layer for passivated contact (TOPCon) solar cells that improves device performance compared to conventional tunnel oxide layers. The modified oxide has a higher Si4+ content and is treated with plasma to enhance the bonding and stability of the oxide surface. This results in better passivation and lower contact resistance compared to conventional tunnel oxides. The modified oxide preparation involves growing a thin SiOx layer, followed by surface treatment with a plasma containing both hydrogen and oxygen. This modifies the oxide composition and structure to improve passivation and device performance when used in TOPCon solar cells.

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A solar cell with reduced recombination losses at side edges, comprising a substrate, a doped conductive layer, a first passivation film layer, and a first dielectric layer. The first passivation film layer completely covers the side surfaces of the substrate, and a second passivation film layer is stacked on the surface of a passivated contact layer facing away from the substrate. The second passivation film layer is made of a material including at least one of SiNx, SiONx, and SiOx.

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A solar cell with improved photoelectric conversion efficiency, comprising a substrate with electrode and non-electrode regions, where the electrode regions have a first surface structure with lower roughness and the non-electrode regions have a second surface structure with higher roughness. The solar cell further includes a tunneling dielectric layer, a first doped conductive layer, and a passivation layer, with the first doped conductive layer having a third surface structure with micro protrusions. The structure enables efficient light utilization and improved contact performance between electrodes and conductive layers.

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Solar cell with improved passivation and electrical performance, manufacturing method, and photovoltaic module and system. The solar cell has a tunnel oxide layer between the substrate and the contact layer. The tunnel oxide layer contains carbon and hydrogen dopants in addition to silicon and oxygen. This improves surface passivation and reduces defects compared to thin tunnel oxides. The carbon doping prevents pore formation during oxide growth. The hydrogen doping passivates the surface. The carbon and hydrogen co-doping enables thicker tunnel oxides for better performance.

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Solar cell with enhanced passivation performance through a multi-layered structure. The cell comprises a semiconductor substrate, a hole transport layer, an electronic transport layer, a first passivation layer, and a second passivation layer. The first passivation layer is positioned between the hole transport layer and the semiconductor substrate, while the second passivation layer is applied between the electronic transport layer and the second surface of the semiconductor substrate. This dual-layer architecture enhances the passivation performance by providing a dense, uniform barrier between the active layers and the substrate surface.

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A Tunnel Oxide Passivated Contact (TOPCon) solar cell with reduced silver content, comprising a silicon substrate, tunneling layer, polycrystalline silicon layer, polycrystalline germanium layer, lower passivation layer, and lower electrode. The polycrystalline silicon and germanium layers are formed between the tunneling layer and lower passivation layer, enabling reduced silver content in the electrodes while maintaining high photoelectric efficiency.

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Tunnel oxide passivation contact solar cells and modules with improved efficiency and reduced parasitic absorption. The cells feature a tunnel oxide layer on the backside, combined with a metal electrode in contact with a phosphorus-doped polysilicon layer, and a front-side tunnel oxide layer passivation contact structure. The module includes a front cover plate, rear cover plate, and encapsulation films.

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A transparent, tunnel-oxide-passivated layered structure for solar cells, comprising a tunnel oxide layer and a microcrystalline silicon carbide (μc-SiCx) layer, where x≥0.5, for front-side or front-and-back-side contact applications. The structure enables efficient charge carrier transport and light absorption while maintaining high temperature stability. The μc-SiCx layer is deposited on the tunnel oxide layer using hot wire chemical vapor deposition (HWCVD) or plasma-enhanced chemical vapor deposition (PECVD) techniques.

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A solar cell with improved photoelectric conversion efficiency, comprising a substrate with front and rear surfaces, a first tunnel layer and first doped conductive layer on the front surface, and a second tunnel layer and second doped conductive layer on the rear surface. The first doped conductive layer has a crystallite size not less than the second doped conductive layer, and the first doped conductive layer includes a doping element of the same type as the substrate, while the second doped conductive layer includes a doping element of a different type.

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A solar cell with improved efficiency, comprising a substrate with a first surface and a second surface, a first stack structure in the first region including a doped layer and a tunnel oxide layer, a second doped layer and a transparent conductive layer in the second region, and a groove penetrating the second doped layer and transparent conductive layer to expose the doped layer. The groove has a width of 15µm to 200µm and a first grid is located in the groove with a contact portion in contact with the exposed doped layer.

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A solar cell with improved passivation structure and manufacturing method. The cell features a substrate with a passivated contact structure comprising a tunnel oxide layer, a polysilicon doped conductive layer, and a second tunnel oxide layer that fully fills holes in the first tunnel oxide layer, enhancing surface passivation and reducing recombination. The manufacturing method involves sequential deposition and lamination of the tunnel oxide and polysilicon layers, followed by annealing and formation of the second tunnel oxide layer.

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Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages (V

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A passivation contact structure for silicon-based solar cells that combines a transparent conductive film with a tunnel layer to achieve both electrical conduction and carrier passivation while minimizing light absorption losses. The structure comprises a tunnel layer formed on a semiconductor layer, a transparent conductive film deposited on the tunnel layer, and a metal electrode contacting the transparent conductive film. The transparent conductive film enables efficient carrier collection while maintaining high light transmittance, resulting in improved energy conversion efficiency compared to traditional passivation contact structures.

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Solar cell with improved efficiency through a novel passivation layer structure. The cell comprises a substrate, tunneling layer, first passivation layer, conductive layer, and first electrode. The first passivation layer is relatively thin, but its efficiency is enhanced by a conductive layer that can be a single layer or a multi-layer structure. The conductive layer can be made of metal, metal oxide, silicon carbon compound, or silicon-oxygen-carbon compounds. The cell preparation method involves stacking the first passivation layer and conductive layer on the tunneling layer, followed by electrode formation.

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A solar cell structure that improves efficiency by reducing surface recombination and metal-semiconductor contact recombination. The structure features a passivated non-metal contact area on the front surface, an ultra-thin tunneling layer and doped polysilicon layer between the back surface and metal electrode, and a passivated back surface with an anti-reflection coating.

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A solar cell with improved photoelectric conversion efficiency, comprising a substrate, a tunneling dielectric layer, a doped conductive layer, a plurality of first electrodes, at least one transmission layer, and at least one diffusion region. The doped conductive layer includes a plurality of main body portions arranged at intervals, with each transmission layer disposed between adjacent main body portions and electrically connected to their side surfaces. The diffusion region partially extends into the transmission layer, tunneling dielectric layer, and substrate, with a doping ion concentration greater than the substrate.

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Passivation contact structure for TOPCon solar cells that enables simultaneous improvement of conductivity and passivation performance. The structure comprises a 1.5-3.5 nm thick passivation oxide layer with nanometer-scale micropores, sandwiched between a doped polysilicon layer and a silicon wafer. The micropores provide an effective conductive channel for carrier transport, overcoming the trade-off between passivation and conductivity typically associated with tunnel oxide layers. The structure is prepared through a novel process involving sequential deposition of dielectric and amorphous thin film layers, followed by annealing and crystallization.

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A solar cell with improved efficiency, comprising a semiconductor substrate, a tunneling layer, a hydrogen barrier layer, a lightly doped conductive layer, and grid-shaped doped conductive layers. The grid-shaped doped conductive layers comprise a heavily doped conductive layer and a metal barrier layer, with the metal barrier layer preventing silver erosion of the semiconductor substrate during high-temperature sintering. The solar cell achieves higher efficiency by reducing parasitic light absorption and maintaining passivation quality.

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A method for preparing a high-efficiency solar cell with reduced recombination losses, comprising forming a tunnel oxide layer on the front side of a silicon wafer using a vapor deposition method, depositing a boron-doped amorphous silicon layer on the tunnel oxide layer, and annealing the wafer at 900°C to 1000°C. The tunnel oxide layer is formed using a nitrogen-oxygen gas mixture, and the boron-doped amorphous silicon layer is deposited using a plasma-enhanced chemical vapor deposition method with a boron precursor gas.

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Solar cell with improved photoelectric conversion efficiency, comprising a substrate with a metal pattern region and a non-metal pattern region, a first passivation contact structure in the metal pattern region with a first tunneling layer and a first doped conductive layer, and a second passivation contact structure covering the first passivation contact structure and the non-metal pattern region with a second tunneling layer and a second doped conductive layer, wherein the second passivation contact structure has a top surface in the non-metal pattern region not higher than the top surface in the metal pattern region.

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A solar cell with improved efficiency and reduced parasitic absorption, comprising a crystalline silicon substrate, a tunneling oxide layer, a doped polycrystalline silicon film, and a back metal electrode. The doped polycrystalline silicon film has a thickness of less than 100 nm, enabling selective carrier collection while minimizing parasitic absorption of long-wavelength light. The back metal electrode forms an Ohmic contact with the doped polycrystalline silicon film through a back aluminum oxide film.

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A back-contact solar cell with double-sided tunneling silicon oxide passivation, comprising a silicon wafer with a front side and a back side, a first semiconductor layer and a second semiconductor layer arranged on the back side of the silicon wafer, and a passivation layer arranged on the front side of the silicon wafer. The first semiconductor layer comprises a first tunneling silicon oxide layer and a first doped polysilicon layer arranged in sequence from the inside to the outside, and the passivation layer comprises a second tunneling silicon oxide layer and a second doped polysilicon layer arranged in sequence from the inside to the outside. The thickness of the first doped polysilicon layer is 3-8 times the thickness of the second doped polysilicon layer.

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A tunnel oxide layer for crystalline silicon solar cells with improved properties, manufactured by a novel Plasma Enhanced Atomic Layer Deposition (PEALD) method. The method involves forming excess hydroxyl groups on the silicon surface through alkaline polishing, followed by PEALD deposition of the tunnel oxide layer. This approach enables the formation of high-quality tunnel oxide layers with controlled thickness, density, and stoichiometry, which are essential for achieving high-efficiency bifacial crystalline silicon solar cells.

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A solar cell with improved photoelectric conversion efficiency, comprising a substrate, a tunneling dielectric layer, multiple doped conductive layers, multiple first electrodes, and at least one conductive transport layer. The conductive transport layers are disposed between adjacent doped conductive layers and in contact with their side surfaces, enabling lateral carrier transport and reducing parasitic absorption of incident light.

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Back junction solar cell design and manufacturing method to improve performance and avoid damage during cell processing. The cell has a back surface field instead of a front surface field, which avoids cell damage during field formation. The back surface field is created by aluminum grid contacts on the back side that penetrate through a passivation layer. This allows a back electrode to connect to the grid contacts without damaging the passivation layer. The cell also has a second passivation layer on the front side to replace the front surface field. This provides passivation and anti-reflection without affecting performance.

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We investigated the electrical characteristics of tunnel oxide passivated contact (TOPCon) solar cells fabricated by ion implantation using a beam line ion implantation (beam line) system and a plasma immersion ion implantation (PIII) system. The sheet resistance and surface passivation quality were almost comparable for the TOPCon structures fabricated using the both implantation systems. An excellent implied open circuit voltage exceeding 745 mV demonstrated the high quality surface passivation. In addition, almost similar conversion efficiencies of 20.5 % and 20.1 % were obtained for the solar cells fabricated using the beam line system and the PIII system, respectively.

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Tunnel Oxide Passivated Contact (TOPCon) solar cells have received widespread attention in recent years, especially in improving conversion efficiency. This paper investigated the impact of hydrogenation technology using photon-injection (HPI) and electron-injection (HEI) processes on TOPCon solar cells, highlighting the higher improvement effect and broader application scope of HPI compared to HEI. In TOPCon cells, several methods are available to prepare the tunneling oxide layer, such as plasma oxidation (PO) and indirect thermal oxidation (TO). The research results indicated that significant improvement differences could be observed when utilizing the HEI treatment for TOPCon solar cells prepared by PO and TO methods, with values of 0.133%abs. and 0.039%abs., respectively. Meanwhile, HPI treatment induced a more significant efficiency improvement for these two types of cells, and the increase in efficiency is 0.247%abs. and 0.244%abs., respectively. The experimental results demonstrated that the passivation effect for TOPCon solar cells prepared by PO and TO methods remained alm... Read More

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The development of a tunnel oxide interfacial layer capped by a highly doped poly-Si layer is considered one of the most promising methods to reduce charge carrier recombination and improve the performance of conventional PERC devices. The thickness and doping concentration of emitters and BSF layers greatly influence the tunnelling current in TOPCon devices. In this research, we evaluated the performance of tunnel oxide passivated contact (TOPCon) solar cells by conducting an in-depth analysis of various key parameters. The parameter include the type of silicon substrate (n or p-type); the thickness and doping density (

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In silicon heterojunction and tunnel oxide passivating contact crystalline silicon (c-Si) solar cells based on successful passivating contacts technologies, an annealing activation step is indispensable to achieve a suitably low contact resistivity (c), which is a costly and non-ideal process. Here, combined with a calcium aluminium (Ca:Al) alloy electrode, a low work function barium oxide and lithium fluoride (BaOxFy/LiF) stack electron-selective contact (ESC) without an annealing activation step on c-Si solar cells clinches an ultra-low c of 1.4 mcm2 delivering a power conversion efficiency (PCE) of 20.5 %. The BaOxFy/LiF/Ca:Al stack structure is built by BaOx/LiF/Ca/Al hybrid structure via a facile continuous thermal evaporation process. As a proof of concept, the stacked BaOxFy/LiF/Ca:Al/Al contact is applied to the rear side of c-Si solar cells, achieving a PCE of 20.5 % with an open-circuit voltage of 625.7 mV, an impressive fill factor of 83.5 % and a short-circuit current density of 39.2 mA/cm2. With the aid of a transient photovoltage setup, the carrier recombination mec... Read More

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Silver consumption reduction is a current development in commercial tunnel passivated contact (TOPCon) crystalline silicon solar cell devices aimed at lowering the entire production cost of photovoltaic energy sources. It depends on the number of fingers and/or finger spacing (SP) on a cell area. In this paper, we analyze the possibility of minimizing silver use with respect to the dominant carrier transport mechanism. The carrier transporting mechanism, such as "pinhole" and/or "tunnel" models, is identified by examining temperature-dependent IV characteristics of polysilicon passivating contact as a function of tunnel oxide (TO) thickness from 0.6 to 2.2 nm. Thermal oxidation was used to produce ultrathin TO films (0.62.2 nm) with temperature and gas ratio controlled. We find that the "pinholes" transport mechanism prevails when the TO thickness exceeds 1.6 nm, whereas the "tunnel" mode dominates when the TO thickness is less than 1.4 nm. The pinhole density is critical in pinhole mode for increasing SP. It is found that low pinhole densities and thick TO thickness (more than 1.6... Read More

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ABSTRACT Currently, the efficiency of ptype passivated emitter and rear contact (PERC) cells has been growing at an absolute efficiency of 0.5% per year and has reached 23%23.5% in mass production while getting closer to its theoretical efficiency limit. nType tunnel oxide passivated contact (TOPCon) and silicon heterojunction (SHJ) cells with their superior passivating selective contacts technology were the most interesting photovoltaics (PV) technology in the industry. The effect of different passivated contact layers with respect to their influence on the J 0 , J 0,metal , c , and the carrier selectivity (S 10 ) and the loss analysis and efficiency potential of industrialtype PERC, TOPCon, and SHJ solar cells were studied and compared. The results showed that TOPCon structure with a high passivation performance and good optical performance is more suitable for bifacial solar cell and the highest theoretical limiting efficiency with metal shading on the ntype Si wafer ( b,e,h,m,max ) can be achieved to 27.62%. Although SHJ structure with the highest passivation performan... Read More

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Nowadays, a stack of heavily doped polysilicon ( poly Si) and tunnel oxide (SiO x ) is widely employed to improve the passivation performance in n type tunnel oxide passivated contact (TOPCon) silicon solar cells. In this case, it is critical to develop an inline advanced fabrication process capable of producing highquality tunnel SiO x . Herein, an inline ozonegas oxidation (OGO) process to prepare the tunnel SiO x is proposed to be applied in n type TOPCon solar cell fabrication, which has obtained better performance compared with previously reported inline plasmaassisted N 2 O oxidation (PANO) process. In order to explore the underlying mechanism, the electrical properties of the OGO and PANO tunnel SiO x are analyzed by deeplevel transient spectroscopy technology. Notably, continuous interface states in the band gap are detected for OGO tunnel SiO x , with the interface state densities ( D it ) of 1.2 10 12 3.6 10 12 cm 2 eV 1 distributed in E v + (0.150.40) eV, which is significantly lower than PANO tunnel SiO x . Furthermore, Xray photoelectron spectroscopy a... Read More

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Tunnel oxide passivated contact (TOPCon) silicon solar cells have been developed and transferred into industrial mass production, which is beneficial to the future production of perovskite/silicon tandem solar cells (TSCs) in a large scale. However, the doped polycrystalline silicon (polySi) layer in the polySibased passivating contact structure yields a profound optical loss from reflection and parasitic absorption, which obstacles the efficiency promotion of TSCs. In this work, the optical property of polySi is improved by insitu oxygen incorporation using plasma enhanced chemical vapor deposition (PECVD) with nitrous oxide (N 2 O) as the oxygen source. The ptype oxygenincorporated polySi (polySiO x ) shows a reduced refractive index and extinction coefficient over 7001200 nm wavelength, leading to a reduced reflection, a lower parasitic absorption and a higher transmission. After applying an optimized ptype oxygenincorporated polySi in the frontside polySi passivating contact structure of cSi bottom cell, the shortcircuit current density and efficiency of a perovs... Read More

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Bifacial solar cells with high efficiency (>25%) achieved through a novel double-side passivated contact (TOPCon) architecture. The cells employ a novel fabrication process that enables selective patterning of poly-Si on both sides of the solar cell, while maintaining high-quality passivation. The passivation stack, comprising a thin layer of silicon nitride (SiNX:H), achieves a field inversion layer of 4 fA/cm², enabling efficient carrier collection across the front surface. This approach enables the creation of high-efficiency solar cells with reduced parasitic absorption losses compared to traditional PERC cells, while maintaining excellent passivation quality.

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A photovoltaic cell with improved efficiency, comprising a substrate with a front surface featuring metal and non-metal pattern regions, each with distinct pyramid structures. The metal regions have larger pyramids and a higher pyramid density compared to the non-metal regions, creating a gradient in surface texture that enhances light absorption and reduces carrier recombination. The cell further includes tunneling layers, doped conductive layers, and a passivation layer to optimize electrical performance.

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A method for improving the efficiency of P-type passivated emitter and rear cell (PERC) solar cells by introducing a novel laminated passivation structure. The structure comprises a silicon substrate with a first SiO2 film, an Al2O3 layer, a SiOxNy film, and a first SiNx film sequentially deposited on the back surface. The aluminum back field passes through these layers to connect with the substrate, reducing recombination and increasing long-wave reflection. The structure enables a 1% or more efficiency improvement in PERC cells, with the potential to further enhance efficiency beyond current limits.

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Passivated contact solar cells and solar cell strings that enable mass production of high-efficiency solar cells through optimized contact structures. The cells feature a semiconductor substrate with a first thin film layer, a second thin film layer, and a first passivation layer located on the surface of the substrate. The passivation layer consists of a compound or mixture of silicon nitride, silicon oxynitride, and silicon oxide, while the second passivation layer is composed of silicon nitride, silicon oxynitride, silicon oxide, and gallium oxide. The first electrode contacts the second film layer, while the second electrode contacts the third passivation layer. This architecture enables the formation of passivated contacts through a single deposition process, enabling efficient mass production of solar cells with high conversion efficiency.

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A solar cell with reduced series resistance, comprising a substrate, a tunneling oxide layer, a doped conductive layer, and a first passivation layer sequentially formed on the substrate's surface. The cell includes a first metal electrode penetrating the first passivation layer to contact the doped conductive layer, and a second metal electrode connected to the first metal electrode's surface, penetrating the tunneling oxide layer to contact the substrate. The second metal electrode's width is smaller than the first metal electrode's width, and a local doped region is formed in the substrate to cover the second metal electrode, with a doping concentration greater than the substrate's doping concentration.

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Solar cell design with improved efficiency by forming the emitter region on the rear surface instead of the front. This involves creating a rear emitter region on the semiconductor substrate, followed by a tunneling layer, junction layer, and electrodes. The rear emitter contacts the substrate directly for a stable pn junction. This prevents sensitivity issues when forming the emitter on the tunneling layer. The rear emitter region blocks minority carrier recombination and forms a homojunction with the substrate.

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Tunnel oxide passivated contacts (TOPCon) have become an increasingly popular contact choice for use in silicon solar cells due to their carrier-selective capabilities and success in creating high-efficiency devices. TOPCon structures, fabricated using a thin silicon oxide (SiOx) passivation layer topped with a layer of doped polysilicon (poly-Si) have enabled cell efficiencies higher than 25%. In this work, we explore the use of a TOPCon rear contact-paired with a standard silicon heterojunction (SHJ) front contact to create hybrid cells-utilizing a novel oxide deposition technique, aerosol-impaction-driven assembly (AIDA). The best cells exceed 20% efficiency and are limited by the processing (in)compatibility of the TOPCon and SHJ contacts. Unusually for TOPCon, we find that AIDA oxide layers up to 6 nm thick provide both decent passivation and sufficient conduction pathways to produce cells with >75% fill factor, indicating a non-tunneling conduction mechanism.

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Double-sided passivated contact solar cell with improved efficiency, comprising a tunneling oxide layer, a carbon-doped polysilicon layer, and a passivation layer on both the front and back sides. The carbon-doped polysilicon layers are co-doped with boron on the front side and phosphorus on the back side, enabling both excellent passivation and optical transmission. The cell is fabricated by texturing a silicon wafer, depositing tunneling layers, carbon-doped polysilicon layers, and passivation layers, followed by metal contact printing.

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A solar cell with improved light absorption efficiency, comprising a substrate, a passivation stack, a tunneling oxide layer, and a doped conductive layer. The passivation stack includes an oxygen-containing dielectric layer, a silicon nitride layer, and a silicon oxynitride layer, with a nitrogen-rich interface between the silicon nitride and silicon oxynitride layers. The silicon nitride layer has a higher refractive index than the silicon oxynitride layer, reducing internal reflection and emission of light. The silicon oxynitride layer has a higher refractive index than the oxygen-containing dielectric layer, enabling external light to enter the substrate at a smaller incident angle.

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Solar cell with improved light absorption efficiency, comprising a substrate with a front and rear surface, a dielectric passivation layer on the front surface, a silicon nitride layer with a specific nitrogen-to-molybdenum ratio, and a silicon oxynitride layer with a specific oxygen-to-nitrogen ratio, and a tunneling oxide and doped conductive layer on the rear surface.

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In order to further improve the photovoltaic conversion efficiency of tunnel oxide passivated contact (TOPCon) solar cells, the hydrogenation with electron injection (HEI) technique on TOPCon solar cells with different processes for preparing tunneling SiOx layers was investigated. The experimental results showed that the conversion efficiency enhancement of TOPCon solar cells with a tunneling SiOx layer prepared by a N2O plasma oxidation method (PO method) was lower than that of the cells prepared by an indirect thermal oxidation method (TO method) under the same HEI treatment conditions. Further studies proved that the improvement effect after HEI treatment was closely related to the denseness of the tunneling SiOx layer: HEI treatment for TOPCon solar cells with a low dense tunneling SiOx layer (TO method) requires higher temperature, higher current, and longer time to achieve a better improvement, while the HEI parameters of cells with a high dense tunneling oxide layer (PO method) need to be readjusted. By optimizing the HEI parameters for cells prepared by the PO method, the po... Read More

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A solar cell and photovoltaic module that mitigate potential-induced degradation (PID) through a novel passivation stack design. The stack includes a first oxygen-rich dielectric layer with a controlled oxygen content, sandwiched between silicon-rich dielectric layers, which prevents sodium ion penetration and carrier recombination. The oxygen-rich layer's refractive index and thickness are optimized to balance electrical and optical performance. The design enables improved PID resistance and enhanced photovoltaic efficiency.

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