Tunnel Oxide Passivated Contact (TOPCON) for Solar Cells

A hybrid heterojunction solar cell with improved surface passivation and reduced light absorption in non-metallic areas. The cell features a tunneling layer formed by thermal oxidation and a polysilicon layer grown using LPCVD or PECVD. The tunneling layer is selectively grown in areas where the polysilicon layer is not present, creating a patterned structure that enhances surface passivation and reduces light absorption. The cell is prepared by sequentially depositing the tunneling layer, polysilicon layer, and other components on a semiconductor substrate.

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Method for preparing a solar cell with improved efficiency by forming tunneling passivation structures on both the front and back surfaces. The method involves oxidizing a portion of the back surface passivation layer to create a mask, then etching through the mask to form the back surface tunneling passivation structure. This prevents damage to the textured surface during etching. The front surface tunneling passivation structure is formed separately. This ensures consistency in texturing between the contact and non-contact regions.

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A tunnel oxide passivated contact (TOPCon) solar cell with improved efficiency, comprising a tunnel oxide layer and a doped polysilicon layer, wherein the doped polysilicon layer is replaced with a transparent conductive oxide (TCO) layer, and a first passivation layer is formed on the TCO layer. The TCO layer is preferably a doped metal oxide, such as aluminum-doped zinc oxide, and the first passivation layer is preferably aluminum oxide or silicon nitride. The solar cell exhibits improved fill factor and efficiency compared to conventional TOPCon cells.

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Transparent conductive contact passivation heterojunction solar cell with improved efficiency and passivation, comprising a p-type amorphous silicon layer, an intrinsic amorphous silicon layer, an n-type amorphous silicon layer, and a transparent conductive oxide layer, wherein the transparent conductive oxide layer is formed by a low-temperature process and has a high carrier mobility.

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Transparent conductive contact passivation heterojunction solar cell design to improve efficiency and reduce costs of heterojunction solar cells. The cell has a unique structure with a tunneling layer, first transparent conductive film, and anti-reflection layer on the light-facing side of the silicon substrate. This reduces recombination and improves fill factor compared to conventional heterojunction cells. The cell can also have an intrinsic amorphous silicon layer, doped amorphous silicon layer, and second transparent conductive film on the backside.

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A modified tunnel oxide layer for passivated contact (TOPCon) solar cells that improves device performance compared to conventional tunnel oxide layers. The modified oxide has a higher Si4+ content and is treated with plasma to enhance the bonding and stability of the oxide surface. This results in better passivation and lower contact resistance compared to conventional tunnel oxides. The modified oxide preparation involves growing a thin SiOx layer, followed by surface treatment with a plasma containing both hydrogen and oxygen. This modifies the oxide composition and structure to improve passivation and device performance when used in TOPCon solar cells.

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A solar cell with reduced recombination losses at side edges, comprising a substrate, a doped conductive layer, a first passivation film layer, and a first dielectric layer. The first passivation film layer completely covers the side surfaces of the substrate, and a second passivation film layer is stacked on the surface of a passivated contact layer facing away from the substrate. The second passivation film layer is made of a material including at least one of SiNx, SiONx, and SiOx.

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A solar cell with improved photoelectric conversion efficiency, comprising a substrate with electrode and non-electrode regions, where the electrode regions have a first surface structure with lower roughness and the non-electrode regions have a second surface structure with higher roughness. The solar cell further includes a tunneling dielectric layer, a first doped conductive layer, and a passivation layer, with the first doped conductive layer having a third surface structure with micro protrusions. The structure enables efficient light utilization and improved contact performance between electrodes and conductive layers.

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Solar cell with improved passivation and electrical performance, manufacturing method, and photovoltaic module and system. The solar cell has a tunnel oxide layer between the substrate and the contact layer. The tunnel oxide layer contains carbon and hydrogen dopants in addition to silicon and oxygen. This improves surface passivation and reduces defects compared to thin tunnel oxides. The carbon doping prevents pore formation during oxide growth. The hydrogen doping passivates the surface. The carbon and hydrogen co-doping enables thicker tunnel oxides for better performance.

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Solar cell with enhanced passivation performance through a multi-layered structure. The cell comprises a semiconductor substrate, a hole transport layer, an electronic transport layer, a first passivation layer, and a second passivation layer. The first passivation layer is positioned between the hole transport layer and the semiconductor substrate, while the second passivation layer is applied between the electronic transport layer and the second surface of the semiconductor substrate. This dual-layer architecture enhances the passivation performance by providing a dense, uniform barrier between the active layers and the substrate surface.

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A Tunnel Oxide Passivated Contact (TOPCon) solar cell with reduced silver content, comprising a silicon substrate, tunneling layer, polycrystalline silicon layer, polycrystalline germanium layer, lower passivation layer, and lower electrode. The polycrystalline silicon and germanium layers are formed between the tunneling layer and lower passivation layer, enabling reduced silver content in the electrodes while maintaining high photoelectric efficiency.

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Tunnel oxide passivation contact solar cells and modules with improved efficiency and reduced parasitic absorption. The cells feature a tunnel oxide layer on the backside, combined with a metal electrode in contact with a phosphorus-doped polysilicon layer, and a front-side tunnel oxide layer passivation contact structure. The module includes a front cover plate, rear cover plate, and encapsulation films.

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A transparent, tunnel-oxide-passivated layered structure for solar cells, comprising a tunnel oxide layer and a microcrystalline silicon carbide (μc-SiCx) layer, where x≥0.5, for front-side or front-and-back-side contact applications. The structure enables efficient charge carrier transport and light absorption while maintaining high temperature stability. The μc-SiCx layer is deposited on the tunnel oxide layer using hot wire chemical vapor deposition (HWCVD) or plasma-enhanced chemical vapor deposition (PECVD) techniques.

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A solar cell with improved photoelectric conversion efficiency, comprising a substrate with front and rear surfaces, a first tunnel layer and first doped conductive layer on the front surface, and a second tunnel layer and second doped conductive layer on the rear surface. The first doped conductive layer has a crystallite size not less than the second doped conductive layer, and the first doped conductive layer includes a doping element of the same type as the substrate, while the second doped conductive layer includes a doping element of a different type.

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A solar cell with improved efficiency, comprising a substrate with a first surface and a second surface, a first stack structure in the first region including a doped layer and a tunnel oxide layer, a second doped layer and a transparent conductive layer in the second region, and a groove penetrating the second doped layer and transparent conductive layer to expose the doped layer. The groove has a width of 15µm to 200µm and a first grid is located in the groove with a contact portion in contact with the exposed doped layer.

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A solar cell with improved passivation structure and manufacturing method. The cell features a substrate with a passivated contact structure comprising a tunnel oxide layer, a polysilicon doped conductive layer, and a second tunnel oxide layer that fully fills holes in the first tunnel oxide layer, enhancing surface passivation and reducing recombination. The manufacturing method involves sequential deposition and lamination of the tunnel oxide and polysilicon layers, followed by annealing and formation of the second tunnel oxide layer.

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Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages (V

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A passivation contact structure for silicon-based solar cells that combines a transparent conductive film with a tunnel layer to achieve both electrical conduction and carrier passivation while minimizing light absorption losses. The structure comprises a tunnel layer formed on a semiconductor layer, a transparent conductive film deposited on the tunnel layer, and a metal electrode contacting the transparent conductive film. The transparent conductive film enables efficient carrier collection while maintaining high light transmittance, resulting in improved energy conversion efficiency compared to traditional passivation contact structures.

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Solar cell with improved efficiency through a novel passivation layer structure. The cell comprises a substrate, tunneling layer, first passivation layer, conductive layer, and first electrode. The first passivation layer is relatively thin, but its efficiency is enhanced by a conductive layer that can be a single layer or a multi-layer structure. The conductive layer can be made of metal, metal oxide, silicon carbon compound, or silicon-oxygen-carbon compounds. The cell preparation method involves stacking the first passivation layer and conductive layer on the tunneling layer, followed by electrode formation.

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A solar cell structure that improves efficiency by reducing surface recombination and metal-semiconductor contact recombination. The structure features a passivated non-metal contact area on the front surface, an ultra-thin tunneling layer and doped polysilicon layer between the back surface and metal electrode, and a passivated back surface with an anti-reflection coating.

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